JPS6413734U - - Google Patents
Info
- Publication number
- JPS6413734U JPS6413734U JP1987109242U JP10924287U JPS6413734U JP S6413734 U JPS6413734 U JP S6413734U JP 1987109242 U JP1987109242 U JP 1987109242U JP 10924287 U JP10924287 U JP 10924287U JP S6413734 U JPS6413734 U JP S6413734U
- Authority
- JP
- Japan
- Prior art keywords
- light
- shielding film
- semiconductor substrate
- aluminum wiring
- shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
第１図は本考案固体撮像装置の一実施例を示す
要部拡大断面図である。 １……シリコン半導体基板、２……転送ゲート
、３……アルミニウム配線、３ｅ……延在部、６
……遮光膜、Ａ……撮像部、Ｂ……ブラツク撮像
部、Ｃ……遮光部。
要部拡大断面図である。 １……シリコン半導体基板、２……転送ゲート
、３……アルミニウム配線、３ｅ……延在部、６
……遮光膜、Ａ……撮像部、Ｂ……ブラツク撮像
部、Ｃ……遮光部。
Claims (1)
- 光入射により光電変換動作するシリコン半導体
基板、該半導体基板に遮光部を形成すべく設けら
れた遮光膜、上記シリコン半導体基板とコンタク
トするシリコンを含むアルミニウム配線、からな
り、上記アルミニウム配線の遮光部側に向う延長
線上に、当該アルミニウム配線と同時に形成され
た補助遮光膜を設け、該補助遮光膜と上記遮光膜
を光学的に重畳配置したことを特徴とする固体撮
像装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987109242U JPH0621257Y2 (ja) | 1987-07-16 | 1987-07-16 | 固体撮像装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987109242U JPH0621257Y2 (ja) | 1987-07-16 | 1987-07-16 | 固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6413734U true JPS6413734U (ja) | 1989-01-24 |
| JPH0621257Y2 JPH0621257Y2 (ja) | 1994-06-01 |
Family
ID=31345306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987109242U Expired - Lifetime JPH0621257Y2 (ja) | 1987-07-16 | 1987-07-16 | 固体撮像装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0621257Y2 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7375427B2 (en) | 2004-10-28 | 2008-05-20 | Seiko Epson Corporation | Semiconductor device, circuit board, electro-optic device, electronic device |
| US7482541B2 (en) | 2004-03-17 | 2009-01-27 | Seiko Epson Corporation | Panel for electro-optical apparatus, method of manufacture thereof, electro-optical apparatus and electronic apparatus |
| US7524700B2 (en) | 2005-03-23 | 2009-04-28 | Seiko Epson Corporation | Method for manufacturing semiconductor device, and method and structure for implementing semicondutor device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5562764A (en) * | 1978-11-01 | 1980-05-12 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5732483A (en) * | 1980-08-06 | 1982-02-22 | Suwa Seikosha Kk | Liquid crystal indicator unit |
| JPS5956766A (ja) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | 固体撮像素子 |
| JPS59163860A (ja) * | 1983-03-09 | 1984-09-14 | Hitachi Ltd | 固体撮像素子 |
| JPS6139744A (ja) * | 1984-07-19 | 1986-02-25 | シーメンス、アクチエンゲゼルシヤフト | 光データバス |
| JPS6280350U (ja) * | 1985-11-08 | 1987-05-22 | ||
| JPS6345856A (ja) * | 1986-08-13 | 1988-02-26 | Hitachi Ltd | 固体撮像素子 |
| JPS6345856U (ja) * | 1986-09-12 | 1988-03-28 |
-
1987
- 1987-07-16 JP JP1987109242U patent/JPH0621257Y2/ja not_active Expired - Lifetime
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5562764A (en) * | 1978-11-01 | 1980-05-12 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5732483A (en) * | 1980-08-06 | 1982-02-22 | Suwa Seikosha Kk | Liquid crystal indicator unit |
| JPS5956766A (ja) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | 固体撮像素子 |
| JPS59163860A (ja) * | 1983-03-09 | 1984-09-14 | Hitachi Ltd | 固体撮像素子 |
| JPS6139744A (ja) * | 1984-07-19 | 1986-02-25 | シーメンス、アクチエンゲゼルシヤフト | 光データバス |
| JPS6280350U (ja) * | 1985-11-08 | 1987-05-22 | ||
| JPS6345856A (ja) * | 1986-08-13 | 1988-02-26 | Hitachi Ltd | 固体撮像素子 |
| JPS6345856U (ja) * | 1986-09-12 | 1988-03-28 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7482541B2 (en) | 2004-03-17 | 2009-01-27 | Seiko Epson Corporation | Panel for electro-optical apparatus, method of manufacture thereof, electro-optical apparatus and electronic apparatus |
| US7375427B2 (en) | 2004-10-28 | 2008-05-20 | Seiko Epson Corporation | Semiconductor device, circuit board, electro-optic device, electronic device |
| US7524700B2 (en) | 2005-03-23 | 2009-04-28 | Seiko Epson Corporation | Method for manufacturing semiconductor device, and method and structure for implementing semicondutor device |
| US7601626B2 (en) | 2005-03-23 | 2009-10-13 | Seiko Epson Corporation | Method for manufacturing semiconductor device, and method and structure for implementing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0621257Y2 (ja) | 1994-06-01 |