JPS6413740U - - Google Patents
Info
- Publication number
- JPS6413740U JPS6413740U JP11015287U JP11015287U JPS6413740U JP S6413740 U JPS6413740 U JP S6413740U JP 11015287 U JP11015287 U JP 11015287U JP 11015287 U JP11015287 U JP 11015287U JP S6413740 U JPS6413740 U JP S6413740U
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- semiconductor layer
- conversion device
- transparent electrode
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Wire Bonding (AREA)
Description
第１図Ａ，Ｂはこの考案の一実施例を示すもの
で同図Ａは光電変換装置の斜視図、同図Ｂは同図
ＡにおけるＸ−Ｘ′線断面図、第２図Ａ，Ｂは従
来の装置を示すもので、同図Ａは斜視図、同図Ｂ
は同図ＡにおけるＸ−Ｘ′線断面図である。 １は透光性基板、２は透明電極、３は半導体層
、４は裏面電極、５はリード体、６は熱硬化性銅
ペースト層である。
で同図Ａは光電変換装置の斜視図、同図Ｂは同図
ＡにおけるＸ−Ｘ′線断面図、第２図Ａ，Ｂは従
来の装置を示すもので、同図Ａは斜視図、同図Ｂ
は同図ＡにおけるＸ−Ｘ′線断面図である。 １は透光性基板、２は透明電極、３は半導体層
、４は裏面電極、５はリード体、６は熱硬化性銅
ペースト層である。
Claims (1)
- 透光性基板の一主面上に設けた透明電極上に半
導体層を設け、この半導体層上に裏面電極を設け
てなる光電変換装置において、上記透明電極およ
び裏面電極の一端にリード体がそれぞれ熱硬化性
銅ペースト層を介して接続されたことを特徴とす
る光電変換装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11015287U JPS6413740U (ja) | 1987-07-17 | 1987-07-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11015287U JPS6413740U (ja) | 1987-07-17 | 1987-07-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6413740U true JPS6413740U (ja) | 1989-01-24 |
Family
ID=31347046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11015287U Pending JPS6413740U (ja) | 1987-07-17 | 1987-07-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6413740U (ja) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58160372A (ja) * | 1982-03-17 | 1983-09-22 | Toshiba Chem Corp | 導電性ペ−スト |
| JPS58196060A (ja) * | 1982-05-10 | 1983-11-15 | Sharp Corp | 薄膜半導体装置 |
| JPS6210453B2 (ja) * | 1979-03-15 | 1987-03-06 | Yokokawa Denki Kk |
-
1987
- 1987-07-17 JP JP11015287U patent/JPS6413740U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6210453B2 (ja) * | 1979-03-15 | 1987-03-06 | Yokokawa Denki Kk | |
| JPS58160372A (ja) * | 1982-03-17 | 1983-09-22 | Toshiba Chem Corp | 導電性ペ−スト |
| JPS58196060A (ja) * | 1982-05-10 | 1983-11-15 | Sharp Corp | 薄膜半導体装置 |