JPS641273A - Manufacture of polycrystalline silicon thin film transistor - Google Patents
Manufacture of polycrystalline silicon thin film transistorInfo
- Publication number
- JPS641273A JPS641273A JP15689887A JP15689887A JPS641273A JP S641273 A JPS641273 A JP S641273A JP 15689887 A JP15689887 A JP 15689887A JP 15689887 A JP15689887 A JP 15689887A JP S641273 A JPS641273 A JP S641273A
- Authority
- JP
- Japan
- Prior art keywords
- region
- thin film
- implanted
- ion
- silicon thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 4
- 229910052760 oxygen Inorganic materials 0.000 abstract 4
- 239000001301 oxygen Substances 0.000 abstract 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-156898A JPH011273A (ja) | 1987-06-23 | 多結晶シリコン薄膜トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-156898A JPH011273A (ja) | 1987-06-23 | 多結晶シリコン薄膜トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS641273A true JPS641273A (en) | 1989-01-05 |
| JPH011273A JPH011273A (ja) | 1989-01-05 |
Family
ID=
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04372346A (ja) * | 1991-06-18 | 1992-12-25 | Marusen Shoji Kk | 卓上型ドリル研削盤 |
| EP0746041A2 (en) * | 1995-05-31 | 1996-12-04 | Matsushita Electric Industrial Co., Ltd. | Channel region of MOSFET and method for producing the same |
| US6369788B1 (en) | 1990-11-26 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
| US6376860B1 (en) | 1993-06-12 | 2002-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6528397B1 (en) | 1997-12-17 | 2003-03-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same |
| US6765229B2 (en) * | 1993-05-26 | 2004-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| US6893906B2 (en) | 1990-11-26 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
| JP2012238851A (ja) * | 2011-04-27 | 2012-12-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7462515B2 (en) | 1990-11-13 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
| US6893906B2 (en) | 1990-11-26 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
| US6369788B1 (en) | 1990-11-26 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
| JPH04372346A (ja) * | 1991-06-18 | 1992-12-25 | Marusen Shoji Kk | 卓上型ドリル研削盤 |
| US6765229B2 (en) * | 1993-05-26 | 2004-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| US6376860B1 (en) | 1993-06-12 | 2002-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US5886389A (en) * | 1995-05-31 | 1999-03-23 | Matsushita Electric Industrial Co., Ltd. | Field-effect transistor and method for producing the same |
| EP0746041A3 (en) * | 1995-05-31 | 1998-04-08 | Matsushita Electric Industrial Co., Ltd. | Channel region of MOSFET and method for producing the same |
| EP0746041A2 (en) * | 1995-05-31 | 1996-12-04 | Matsushita Electric Industrial Co., Ltd. | Channel region of MOSFET and method for producing the same |
| US6528397B1 (en) | 1997-12-17 | 2003-03-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same |
| US6806498B2 (en) | 1997-12-17 | 2004-10-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same |
| JP2012238851A (ja) * | 2011-04-27 | 2012-12-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US9543145B2 (en) | 2011-04-27 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US9911767B2 (en) | 2011-04-27 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device comprising oxide semiconductor |
| US10249651B2 (en) | 2011-04-27 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
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