JPS6410660A - Photoelectric conversion device - Google Patents

Photoelectric conversion device

Info

Publication number
JPS6410660A
JPS6410660A JP62165523A JP16552387A JPS6410660A JP S6410660 A JPS6410660 A JP S6410660A JP 62165523 A JP62165523 A JP 62165523A JP 16552387 A JP16552387 A JP 16552387A JP S6410660 A JPS6410660 A JP S6410660A
Authority
JP
Japan
Prior art keywords
electrode
potential
stabilizing
photoelectric conversion
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62165523A
Other languages
Japanese (ja)
Inventor
Shunsuke Inoue
Shiro Arikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62165523A priority Critical patent/JPS6410660A/en
Publication of JPS6410660A publication Critical patent/JPS6410660A/en
Priority to US07/839,074 priority patent/US5204544A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a photoelectric conversion signal with little irregularity, by stabilizing electrically a surface layer in which surface recombination current generates, by arranging a stabilizing electrode on a surface on which a semiconductor region is formed. CONSTITUTION:In the title photoelectric conversion device, it is utilized that recombination current depends on a surface potential, and a stabilizing electrode 11 to control the electric potential of a silicon surface is provided. The electrode 11 is formed on the surface of a p-base region 6 and an N<-> collector region 2 on the periphery of the region 6, and made of transparent electrode material such as ITO and SnO2. In the non-controlled state where no voltage is applied to the electrode 11, a dark current largely changes according to external disturbance. When the surface potential is stabilized by keeping at a control potential less than or equal to -1V, the dark current is restricted within a small range. By operating the device in this state, a read-out signal with little irregularity can be stably output, In the case where the electrode is not kept at a constant potential and put in a floating state, the silicon surface can be sufficiently stabilized against external potential disturbance, by making the electrode area sufficiently large as compared with the cell area.
JP62165523A 1987-07-03 1987-07-03 Photoelectric conversion device Pending JPS6410660A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62165523A JPS6410660A (en) 1987-07-03 1987-07-03 Photoelectric conversion device
US07/839,074 US5204544A (en) 1987-07-03 1992-02-24 Photoelectric conversion device with stabilizing electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165523A JPS6410660A (en) 1987-07-03 1987-07-03 Photoelectric conversion device

Publications (1)

Publication Number Publication Date
JPS6410660A true JPS6410660A (en) 1989-01-13

Family

ID=15814007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165523A Pending JPS6410660A (en) 1987-07-03 1987-07-03 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPS6410660A (en)

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