JPS6410111B2 - - Google Patents
Info
- Publication number
- JPS6410111B2 JPS6410111B2 JP57187471A JP18747182A JPS6410111B2 JP S6410111 B2 JPS6410111 B2 JP S6410111B2 JP 57187471 A JP57187471 A JP 57187471A JP 18747182 A JP18747182 A JP 18747182A JP S6410111 B2 JPS6410111 B2 JP S6410111B2
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- grinding
- round hole
- etching
- bulge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57187471A JPS5978578A (ja) | 1982-10-27 | 1982-10-27 | ダイヤフラム製造方法 |
| GB08327236A GB2130435B (en) | 1982-10-27 | 1983-10-12 | Semiconductor strain sensor and method for manufacturing the same |
| DE19833338384 DE3338384A1 (de) | 1982-10-27 | 1983-10-21 | Halbleiter-dehnungssensor und verfahren zu seiner herstellung |
| US06/820,598 US4622098A (en) | 1982-10-27 | 1986-01-21 | Method for manufacturing semiconductor strain sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57187471A JPS5978578A (ja) | 1982-10-27 | 1982-10-27 | ダイヤフラム製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5978578A JPS5978578A (ja) | 1984-05-07 |
| JPS6410111B2 true JPS6410111B2 (enExample) | 1989-02-21 |
Family
ID=16206658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57187471A Granted JPS5978578A (ja) | 1982-10-27 | 1982-10-27 | ダイヤフラム製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5978578A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4758222B2 (ja) * | 2005-12-21 | 2011-08-24 | 株式会社ディスコ | ウエーハの加工方法および装置 |
-
1982
- 1982-10-27 JP JP57187471A patent/JPS5978578A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5978578A (ja) | 1984-05-07 |
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