JPH0368545B2 - - Google Patents
Info
- Publication number
- JPH0368545B2 JPH0368545B2 JP58084171A JP8417183A JPH0368545B2 JP H0368545 B2 JPH0368545 B2 JP H0368545B2 JP 58084171 A JP58084171 A JP 58084171A JP 8417183 A JP8417183 A JP 8417183A JP H0368545 B2 JPH0368545 B2 JP H0368545B2
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- thickness
- center
- single crystal
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58084171A JPS59210676A (ja) | 1983-05-16 | 1983-05-16 | 半導体圧力変換素子 |
| GB08327236A GB2130435B (en) | 1982-10-27 | 1983-10-12 | Semiconductor strain sensor and method for manufacturing the same |
| DE19833338384 DE3338384A1 (de) | 1982-10-27 | 1983-10-21 | Halbleiter-dehnungssensor und verfahren zu seiner herstellung |
| US06/820,598 US4622098A (en) | 1982-10-27 | 1986-01-21 | Method for manufacturing semiconductor strain sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58084171A JPS59210676A (ja) | 1983-05-16 | 1983-05-16 | 半導体圧力変換素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59210676A JPS59210676A (ja) | 1984-11-29 |
| JPH0368545B2 true JPH0368545B2 (enExample) | 1991-10-28 |
Family
ID=13823044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58084171A Granted JPS59210676A (ja) | 1982-10-27 | 1983-05-16 | 半導体圧力変換素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59210676A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4771667B2 (ja) * | 2004-03-24 | 2011-09-14 | 京セラ株式会社 | 圧力検出装置用パッケージおよび圧力検出装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5664471A (en) * | 1979-10-30 | 1981-06-01 | Toshiba Corp | Detector for pressure of semiconductor |
| JPS5817076A (ja) * | 1981-07-17 | 1983-02-01 | 株式会社東芝 | エレベ−タの群管理制御装置 |
-
1983
- 1983-05-16 JP JP58084171A patent/JPS59210676A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59210676A (ja) | 1984-11-29 |
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