JPS59210676A - 半導体圧力変換素子 - Google Patents

半導体圧力変換素子

Info

Publication number
JPS59210676A
JPS59210676A JP58084171A JP8417183A JPS59210676A JP S59210676 A JPS59210676 A JP S59210676A JP 58084171 A JP58084171 A JP 58084171A JP 8417183 A JP8417183 A JP 8417183A JP S59210676 A JPS59210676 A JP S59210676A
Authority
JP
Japan
Prior art keywords
thickness
diaphragm
single crystal
etching
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58084171A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0368545B2 (enExample
Inventor
Nobuo Ochiai
落合　信夫
Takashi Tsumagari
津曲　孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58084171A priority Critical patent/JPS59210676A/ja
Priority to GB08327236A priority patent/GB2130435B/en
Priority to DE19833338384 priority patent/DE3338384A1/de
Publication of JPS59210676A publication Critical patent/JPS59210676A/ja
Priority to US06/820,598 priority patent/US4622098A/en
Publication of JPH0368545B2 publication Critical patent/JPH0368545B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP58084171A 1982-10-27 1983-05-16 半導体圧力変換素子 Granted JPS59210676A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58084171A JPS59210676A (ja) 1983-05-16 1983-05-16 半導体圧力変換素子
GB08327236A GB2130435B (en) 1982-10-27 1983-10-12 Semiconductor strain sensor and method for manufacturing the same
DE19833338384 DE3338384A1 (de) 1982-10-27 1983-10-21 Halbleiter-dehnungssensor und verfahren zu seiner herstellung
US06/820,598 US4622098A (en) 1982-10-27 1986-01-21 Method for manufacturing semiconductor strain sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58084171A JPS59210676A (ja) 1983-05-16 1983-05-16 半導体圧力変換素子

Publications (2)

Publication Number Publication Date
JPS59210676A true JPS59210676A (ja) 1984-11-29
JPH0368545B2 JPH0368545B2 (enExample) 1991-10-28

Family

ID=13823044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58084171A Granted JPS59210676A (ja) 1982-10-27 1983-05-16 半導体圧力変換素子

Country Status (1)

Country Link
JP (1) JPS59210676A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005274332A (ja) * 2004-03-24 2005-10-06 Kyocera Corp 圧力検出装置用パッケージおよび圧力検出装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5664471A (en) * 1979-10-30 1981-06-01 Toshiba Corp Detector for pressure of semiconductor
JPS5817076A (ja) * 1981-07-17 1983-02-01 株式会社東芝 エレベ−タの群管理制御装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5664471A (en) * 1979-10-30 1981-06-01 Toshiba Corp Detector for pressure of semiconductor
JPS5817076A (ja) * 1981-07-17 1983-02-01 株式会社東芝 エレベ−タの群管理制御装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005274332A (ja) * 2004-03-24 2005-10-06 Kyocera Corp 圧力検出装置用パッケージおよび圧力検出装置

Also Published As

Publication number Publication date
JPH0368545B2 (enExample) 1991-10-28

Similar Documents

Publication Publication Date Title
JPH0298927A (ja) 研磨装置
JPS54110783A (en) Semiconductor substrate and its manufacture
US6004860A (en) SOI substrate and a method for fabricating the same
JPH05121384A (ja) 半導体装置の製造方法
JPS59210676A (ja) 半導体圧力変換素子
JPH01227441A (ja) 半導体基板
US4622098A (en) Method for manufacturing semiconductor strain sensor
JPH02139163A (ja) ウェーハの加工方法
JP3821944B2 (ja) ウェーハの枚葉式研磨方法とその装置
KR102912760B1 (ko) 연삭 방법
JPH02185032A (ja) エッチング方法及びエッチング装置
JPS6410111B2 (enExample)
JP2005217389A (ja) 化学機械研磨装置用ダミー処理方法及び研磨パッドコンディショニング方法
JPH0155970B2 (enExample)
JPH0335062B2 (enExample)
JP3898261B2 (ja) 半導体ウエーハの保持機構
JP3173905B2 (ja) 半導体圧力センサ
JP3079203B2 (ja) 半導体ウエーハの製造方法
JP6885453B1 (ja) Ｓｏｉウェーハの片面研磨システム及びそれを用いたｓｏｉウェーハの片面研磨方法
JP2000317817A (ja) 被加工物の保持具、研磨装置及び研磨方法
TW299454B (enExample)
JP2025062298A (ja) 保護シート貼着方法
JPH02123769A (ja) 半導体圧力センサ用ダイヤフラム製造方法
JPH0994757A (ja) 半導体基板の研磨方法
JPS592192B2 (ja) ハンドウタイアツリヨクヘンカンソウチ