JPH0155970B2 - - Google Patents
Info
- Publication number
- JPH0155970B2 JPH0155970B2 JP28181884A JP28181884A JPH0155970B2 JP H0155970 B2 JPH0155970 B2 JP H0155970B2 JP 28181884 A JP28181884 A JP 28181884A JP 28181884 A JP28181884 A JP 28181884A JP H0155970 B2 JPH0155970 B2 JP H0155970B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cutting
- pressure sensor
- pressure
- sensitive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 60
- 238000005520 cutting process Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 23
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 85
- 239000004065 semiconductor Substances 0.000 description 8
- 239000003513 alkali Substances 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00888—Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Pressure Sensors (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59281818A JPS61149316A (ja) | 1984-12-24 | 1984-12-24 | 圧力センサウエハの切断方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59281818A JPS61149316A (ja) | 1984-12-24 | 1984-12-24 | 圧力センサウエハの切断方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61149316A JPS61149316A (ja) | 1986-07-08 |
| JPH0155970B2 true JPH0155970B2 (enExample) | 1989-11-28 |
Family
ID=17644419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59281818A Granted JPS61149316A (ja) | 1984-12-24 | 1984-12-24 | 圧力センサウエハの切断方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61149316A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63110671A (ja) * | 1986-10-28 | 1988-05-16 | Sumitomo Electric Ind Ltd | 半導体圧力センサの測定方法 |
| JPS63110672A (ja) * | 1986-10-28 | 1988-05-16 | Sumitomo Electric Ind Ltd | 半導体圧力センサの測定方法 |
| US9034666B2 (en) | 2003-12-29 | 2015-05-19 | Vladimir Vaganov | Method of testing of MEMS devices on a wafer level |
| CN102681694A (zh) * | 2006-01-05 | 2012-09-19 | 弗拉多米尔·瓦格诺夫 | 力输入控制器件及其制造 |
| JP2015133460A (ja) * | 2014-01-16 | 2015-07-23 | 株式会社ディスコ | ウェーハの分割方法 |
| JP6817854B2 (ja) * | 2017-02-28 | 2021-01-20 | 株式会社ディスコ | 樹脂パッケージ基板の分割方法 |
-
1984
- 1984-12-24 JP JP59281818A patent/JPS61149316A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61149316A (ja) | 1986-07-08 |
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