JPS6410100B2 - - Google Patents

Info

Publication number
JPS6410100B2
JPS6410100B2 JP56209992A JP20999281A JPS6410100B2 JP S6410100 B2 JPS6410100 B2 JP S6410100B2 JP 56209992 A JP56209992 A JP 56209992A JP 20999281 A JP20999281 A JP 20999281A JP S6410100 B2 JPS6410100 B2 JP S6410100B2
Authority
JP
Japan
Prior art keywords
silicon carbide
sintered body
film
sio
carbide sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56209992A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58130547A (ja
Inventor
Akira Enomoto
Hidetoshi Yamauchi
Shoji Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP56209992A priority Critical patent/JPS58130547A/ja
Priority to US06/451,940 priority patent/US4499147A/en
Publication of JPS58130547A publication Critical patent/JPS58130547A/ja
Priority to US06/858,834 priority patent/US4664946A/en
Publication of JPS6410100B2 publication Critical patent/JPS6410100B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
JP56209992A 1981-12-28 1981-12-28 電気伝導性を有する炭化珪素基板への絶縁皮膜形成方法 Granted JPS58130547A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56209992A JPS58130547A (ja) 1981-12-28 1981-12-28 電気伝導性を有する炭化珪素基板への絶縁皮膜形成方法
US06/451,940 US4499147A (en) 1981-12-28 1982-12-21 Silicon carbide substrates and a method of producing the same
US06/858,834 US4664946A (en) 1981-12-28 1986-04-29 Silicon carbide substrates and a method of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209992A JPS58130547A (ja) 1981-12-28 1981-12-28 電気伝導性を有する炭化珪素基板への絶縁皮膜形成方法

Publications (2)

Publication Number Publication Date
JPS58130547A JPS58130547A (ja) 1983-08-04
JPS6410100B2 true JPS6410100B2 (cs) 1989-02-21

Family

ID=16582058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209992A Granted JPS58130547A (ja) 1981-12-28 1981-12-28 電気伝導性を有する炭化珪素基板への絶縁皮膜形成方法

Country Status (1)

Country Link
JP (1) JPS58130547A (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330386A (ja) * 1986-07-23 1988-02-09 日本特殊陶業株式会社 反応焼結炭化珪素製耐熱部品の製造方法
JP2002231424A (ja) * 2001-01-31 2002-08-16 Kyocera Corp セラミックヒーターとその製造方法及びこれを用いたウエハ加熱装置
FR2942516B1 (fr) 2009-02-24 2015-07-03 Saint Gobain Ct Recherches Assemblage affleurant.
FR2942517B1 (fr) 2009-02-24 2015-07-03 Saint Gobain Ct Recherches Materiau compliant.
FR2942515B1 (fr) 2009-02-24 2015-07-03 Saint Gobain Ct Recherches Dispositif d'assemblage.
FR2942471A1 (fr) * 2009-02-24 2010-08-27 Saint Gobain Ct Recherches Piece ceramique revetue.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101442A (ja) * 1981-12-11 1983-06-16 Hitachi Ltd 電気的装置用基板

Also Published As

Publication number Publication date
JPS58130547A (ja) 1983-08-04

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