JPS6397235U - - Google Patents

Info

Publication number
JPS6397235U
JPS6397235U JP1986193175U JP19317586U JPS6397235U JP S6397235 U JPS6397235 U JP S6397235U JP 1986193175 U JP1986193175 U JP 1986193175U JP 19317586 U JP19317586 U JP 19317586U JP S6397235 U JPS6397235 U JP S6397235U
Authority
JP
Japan
Prior art keywords
tape
metal foil
holes
hole
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1986193175U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986193175U priority Critical patent/JPS6397235U/ja
Publication of JPS6397235U publication Critical patent/JPS6397235U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto

Landscapes

  • Wire Bonding (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は本考案に係る半導体中間構
体の一実施例を示すメツキ処理前及びメツキ処理
後の平面図、第3図はTABリード型半導体装置
の構造例を示す平面図、第4図は第3図の断面図
、第5図は半導体中間構体の従来例を示す平面図
、第6図は第5図のテープ部分から切断された中
間構体を特性試験するBTボードを示す斜視図で
ある。 3…金属箔リード、4…半導体ペレツト、7…
絶縁性テープ、8…角孔、15…メツキ処理用導
電パターン、16…給電用配線、17…リード引
出し用配線、B…半導体中間構体。
1 and 2 are plan views showing one embodiment of a semiconductor intermediate structure according to the present invention before and after plating processing, and FIG. 3 is a plan view showing an example of the structure of a TAB lead type semiconductor device. 4 is a sectional view of FIG. 3, FIG. 5 is a plan view showing a conventional example of a semiconductor intermediate structure, and FIG. 6 is a perspective view showing a BT board for testing the characteristics of the intermediate structure cut from the tape portion of FIG. It is a diagram. 3...Metal foil lead, 4...Semiconductor pellet, 7...
Insulating tape, 8... Square hole, 15... Conductive pattern for plating processing, 16... Wiring for power supply, 17... Wiring for lead extraction, B... Semiconductor intermediate structure.

Claims (1)

【実用新案登録請求の範囲】 長尺な絶縁性テープと、このテープに所定間隔
毎に設けられた複数の孔と、これらの孔内に配置
された複数の半導体ペレツトと、上記孔の周縁部
に放射状に形成され、孔内に延びた一端が上記半
導体ペレツトのバンプ電極に圧着された複数の金
属箔リードと、テープの孔周縁部に形成され、金
属箔リードをメツキ処理するためのメツキ処理用
導電パターンとからなるものにおいて、 上記メツキ処理用導電パターンを上記テープの
長手方向並びに短手方向に夫々設けた1本の給電
用配線の途中から各金属箔リードの電極パツドに
接続された複数本のリード引出し用配線を分岐さ
せて構成したことを特徴とする半導体中間構体。
[Claims for Utility Model Registration] A long insulating tape, a plurality of holes provided in the tape at predetermined intervals, a plurality of semiconductor pellets placed in these holes, and the peripheral edges of the holes. A plurality of metal foil leads are formed radially in the hole and one end extending into the hole is crimped to the bump electrode of the semiconductor pellet, and a plating process is formed around the hole periphery of the tape to plate the metal foil leads. A plurality of conductive patterns for plating are connected to the electrode pads of each metal foil lead from the middle of one power supply wiring provided in the longitudinal direction and short direction of the tape, respectively. A semiconductor intermediate structure characterized in that the wiring for leading out a book is configured by branching.
JP1986193175U 1986-12-15 1986-12-15 Pending JPS6397235U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986193175U JPS6397235U (en) 1986-12-15 1986-12-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986193175U JPS6397235U (en) 1986-12-15 1986-12-15

Publications (1)

Publication Number Publication Date
JPS6397235U true JPS6397235U (en) 1988-06-23

Family

ID=31148954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986193175U Pending JPS6397235U (en) 1986-12-15 1986-12-15

Country Status (1)

Country Link
JP (1) JPS6397235U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998018163A1 (en) * 1996-10-22 1998-04-30 Seiko Epson Corporation Film carrier tape, tape carrier semiconductor device assembly, semiconductor device, its manufacturing method, package substrate, and electronic appliance
WO1998033212A1 (en) * 1997-01-23 1998-07-30 Seiko Epson Corporation Film carrier tape, semiconductor assembly, semiconductor device, manufacturing method therefor, mounting board, and electronic equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998018163A1 (en) * 1996-10-22 1998-04-30 Seiko Epson Corporation Film carrier tape, tape carrier semiconductor device assembly, semiconductor device, its manufacturing method, package substrate, and electronic appliance
KR100455492B1 (en) * 1996-10-22 2005-01-13 세이코 엡슨 가부시키가이샤 Film carrier tape and its manufacturing method, tape carrier semiconductor device assembly manufacturing method, semiconductor device and its manufacturing method, mounting board and electronic equipment
SG165145A1 (en) * 1996-10-22 2010-10-28 Seiko Epson Corp Film carrier tape
WO1998033212A1 (en) * 1997-01-23 1998-07-30 Seiko Epson Corporation Film carrier tape, semiconductor assembly, semiconductor device, manufacturing method therefor, mounting board, and electronic equipment

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