JPS635639U

JPS635639U -

Info

Publication number: JPS635639U
Application number: JP9811886U
Authority: JP
Priority date: 1986-06-26
Filing date: 1986-06-26
Publication date: 1988-01-14

Description

[Brief explanation of the drawing]

第１図は本考案の基本実施例であるＴＡＢリー
ド型半導体装置の中間構体の一部を拡大して示す
図、第２図は第１図に示す中間構体の全体を示す
斜視図である。第３図及び第４図は、夫々本考案
の２種の応用実施例であり、中間構体の一部を拡
大して示す図である。第５図及び第６図はＴＡＢ
リード型半導体装置の構造を示し、第５図は平面
図、第６図は断面図である。第７図乃至第１０図
は従来例を示し、第７図は中間構体の一部拡大図
、第８図はロール状態の中間構体を示す側面図、
第９図は中間構体の切断位置を示す平面図、第１
０図は切断後にＢＴボードに収納された中間構体
を示す斜視図である。２０…ＴＡＢリード型半導体装置、２１…中間
構体、２３…絶縁性テープ、２４…孔〔角孔〕、
２６…半導体ペレツト、２７…金属箔リード、２
８…導電パターン。 FIG. 1 is an enlarged view of a part of the intermediate structure of a TAB lead type semiconductor device according to a basic embodiment of the present invention, and FIG. 2 is a perspective view of the entire intermediate structure shown in FIG. 1. FIG. 3 and FIG. 4 are two types of applied embodiments of the present invention, respectively, and are enlarged views showing a part of the intermediate structure. Figures 5 and 6 are TAB
The structure of the lead type semiconductor device is shown, with FIG. 5 being a plan view and FIG. 6 being a sectional view. 7 to 10 show a conventional example, FIG. 7 is a partially enlarged view of the intermediate structure, FIG. 8 is a side view showing the intermediate structure in a rolled state,
Figure 9 is a plan view showing the cutting position of the intermediate structure;
FIG. 0 is a perspective view showing the intermediate structure housed in the BT board after cutting. 20... TAB lead type semiconductor device, 21... Intermediate structure, 23... Insulating tape, 24... Hole [square hole],
26...Semiconductor pellet, 27...Metal foil lead, 2
8...Conductive pattern.

Claims

[Claims for Utility Model Registration] A long insulating tape, a plurality of holes provided in the tape at predetermined intervals, a plurality of semiconductor pellets arranged in these holes, and the peripheral edges of the holes. and a plurality of metal foil leads radially fixed to the insulating tape and having one end extending into the hole crimped to the plurality of bump electrodes of the semiconductor pellet, the metal foil leads extending in the longitudinal direction of the insulating tape. A semiconductor intermediate structure, characterized in that a conductive pattern for applying a test voltage is formed, which is connected to a conductive pattern used for supplying power to a semiconductor pellet.