JPS63944B2 - - Google Patents
Info
- Publication number
- JPS63944B2 JPS63944B2 JP8955878A JP8955878A JPS63944B2 JP S63944 B2 JPS63944 B2 JP S63944B2 JP 8955878 A JP8955878 A JP 8955878A JP 8955878 A JP8955878 A JP 8955878A JP S63944 B2 JPS63944 B2 JP S63944B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- layer
- etched
- pattern
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 27
- 238000010884 ion-beam technique Methods 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 1
- 239000010931 gold Substances 0.000 description 13
- 239000010936 titanium Substances 0.000 description 12
- 238000000992 sputter etching Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000010399 physical interaction Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8955878A JPS5516459A (en) | 1978-07-21 | 1978-07-21 | Taper etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8955878A JPS5516459A (en) | 1978-07-21 | 1978-07-21 | Taper etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5516459A JPS5516459A (en) | 1980-02-05 |
| JPS63944B2 true JPS63944B2 (ko) | 1988-01-09 |
Family
ID=13974141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8955878A Granted JPS5516459A (en) | 1978-07-21 | 1978-07-21 | Taper etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5516459A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100404813B1 (ko) * | 1993-12-24 | 2004-02-11 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 칼라표시장치및편향유닛 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655231B (zh) * | 2014-11-13 | 2018-07-06 | 北京北方华创微电子装备有限公司 | 一种刻蚀用掩膜组及应用其的衬底刻蚀方法 |
-
1978
- 1978-07-21 JP JP8955878A patent/JPS5516459A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100404813B1 (ko) * | 1993-12-24 | 2004-02-11 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 칼라표시장치및편향유닛 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5516459A (en) | 1980-02-05 |
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