JPS6393187A - 分布帰還型半導体レ−ザ - Google Patents

分布帰還型半導体レ−ザ

Info

Publication number
JPS6393187A
JPS6393187A JP61239480A JP23948086A JPS6393187A JP S6393187 A JPS6393187 A JP S6393187A JP 61239480 A JP61239480 A JP 61239480A JP 23948086 A JP23948086 A JP 23948086A JP S6393187 A JPS6393187 A JP S6393187A
Authority
JP
Japan
Prior art keywords
distributed feedback
semiconductor laser
feedback semiconductor
light
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61239480A
Other languages
English (en)
Japanese (ja)
Other versions
JPH051992B2 (enExample
Inventor
Tomohiko Yoshida
智彦 吉田
Haruhisa Takiguchi
滝口　治久
Shinji Kaneiwa
進治 兼岩
Hiroaki Kudo
裕章 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP61239480A priority Critical patent/JPS6393187A/ja
Priority to US07/104,315 priority patent/US4849985A/en
Priority to EP87308877A priority patent/EP0263690A3/en
Publication of JPS6393187A publication Critical patent/JPS6393187A/ja
Publication of JPH051992B2 publication Critical patent/JPH051992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP61239480A 1986-10-08 1986-10-08 分布帰還型半導体レ−ザ Granted JPS6393187A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61239480A JPS6393187A (ja) 1986-10-08 1986-10-08 分布帰還型半導体レ−ザ
US07/104,315 US4849985A (en) 1986-10-08 1987-10-02 Distributed feedback semiconductor laser device
EP87308877A EP0263690A3 (en) 1986-10-08 1987-10-07 A distributed feedback semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61239480A JPS6393187A (ja) 1986-10-08 1986-10-08 分布帰還型半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS6393187A true JPS6393187A (ja) 1988-04-23
JPH051992B2 JPH051992B2 (enExample) 1993-01-11

Family

ID=17045400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61239480A Granted JPS6393187A (ja) 1986-10-08 1986-10-08 分布帰還型半導体レ−ザ

Country Status (3)

Country Link
US (1) US4849985A (enExample)
EP (1) EP0263690A3 (enExample)
JP (1) JPS6393187A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69220303T2 (de) * 1991-07-24 1998-01-02 Sharp Kk Verfahren zur Herstellung eines Halbleiterlasers mit verteilter Rückkoppelung
GB2354110A (en) * 1999-09-08 2001-03-14 Univ Bristol Ridge waveguide lasers
US6885793B2 (en) * 2003-06-10 2005-04-26 Spectra Physics, Inc Cleaving laser diode bars having gratings

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1010241A (en) * 1963-07-02 1965-11-17 Nat Res Dev Optical maser device
JP3381269B2 (ja) * 1992-04-07 2003-02-24 東芝モノフラックス株式会社 繊維質断熱材及びその製造方法

Also Published As

Publication number Publication date
EP0263690A3 (en) 1989-04-05
US4849985A (en) 1989-07-18
EP0263690A2 (en) 1988-04-13
JPH051992B2 (enExample) 1993-01-11

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