JPS639219B2 - - Google Patents
Info
- Publication number
- JPS639219B2 JPS639219B2 JP54140284A JP14028479A JPS639219B2 JP S639219 B2 JPS639219 B2 JP S639219B2 JP 54140284 A JP54140284 A JP 54140284A JP 14028479 A JP14028479 A JP 14028479A JP S639219 B2 JPS639219 B2 JP S639219B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- doped
- photoconductive layer
- gas
- photoconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 108091008695 photoreceptors Proteins 0.000 claims description 45
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 28
- 229910052799 carbon Inorganic materials 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 229910052731 fluorine Inorganic materials 0.000 claims description 22
- 239000011737 fluorine Substances 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 11
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 155
- 239000007789 gas Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 238000000354 decomposition reaction Methods 0.000 description 21
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 20
- 238000000034 method Methods 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000011161 development Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- -1 or a plate Chemical class 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 1
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 102000054765 polymorphisms of proteins Human genes 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14028479A JPS5664347A (en) | 1979-10-30 | 1979-10-30 | Electrophotographic receptor |
| US06/202,201 US4361638A (en) | 1979-10-30 | 1980-10-30 | Electrophotographic element with alpha -Si and C material doped with H and F and process for producing the same |
| DE19803040972 DE3040972A1 (de) | 1979-10-30 | 1980-10-30 | Elektrophotographisches lichtempfindliches material und verfahren zu dessen herstellung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14028479A JPS5664347A (en) | 1979-10-30 | 1979-10-30 | Electrophotographic receptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5664347A JPS5664347A (en) | 1981-06-01 |
| JPS639219B2 true JPS639219B2 (fr) | 1988-02-26 |
Family
ID=15265191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14028479A Granted JPS5664347A (en) | 1979-10-30 | 1979-10-30 | Electrophotographic receptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5664347A (fr) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2908123A1 (de) * | 1978-03-03 | 1979-09-06 | Canon Kk | Bildaufzeichnungsmaterial fuer elektrophotographie |
| US4999270A (en) * | 1980-06-25 | 1991-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5545503A (en) * | 1980-06-25 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making printing member for electrostatic photocopying |
| US5144367A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4889783A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5070364A (en) * | 1980-06-25 | 1991-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4971872A (en) * | 1980-06-25 | 1990-11-20 | Shunpei Yamazaki | Electrostatic photocopying machine |
| JPS5711351A (en) * | 1980-06-25 | 1982-01-21 | Shunpei Yamazaki | Electrostatic copying machine |
| US5103262A (en) * | 1980-06-25 | 1992-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5008171A (en) * | 1980-06-25 | 1991-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US5143808A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
| US4889782A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic photocopying machine |
| US4536460A (en) * | 1981-11-09 | 1985-08-20 | Canon Kabushiki Kaisha | Photoconductive member |
| US4522905A (en) * | 1982-02-04 | 1985-06-11 | Canon Kk | Amorphous silicon photoconductive member with interface and rectifying layers |
| US4452874A (en) * | 1982-02-08 | 1984-06-05 | Canon Kabushiki Kaisha | Photoconductive member with multiple amorphous Si layers |
| US4452875A (en) * | 1982-02-15 | 1984-06-05 | Canon Kabushiki Kaisha | Amorphous photoconductive member with α-Si interlayers |
| JP2585964B2 (ja) * | 1993-12-22 | 1997-02-26 | 株式会社 半導体エネルギー研究所 | 感光体の作製方法 |
| JP2573150B2 (ja) * | 1993-12-22 | 1997-01-22 | 株式会社 半導体エネルギー研究所 | 電子感光装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54116930A (en) * | 1978-03-03 | 1979-09-11 | Canon Inc | Image forming element for zerography |
| JPS54121743A (en) * | 1978-03-14 | 1979-09-21 | Canon Inc | Electrophotographic image forming member |
| JPS54145539A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Electrophotographic image forming material |
| JPS5614241A (en) * | 1979-07-16 | 1981-02-12 | Matsushita Electric Ind Co Ltd | Electrophotographic receptor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121239U (fr) * | 1979-02-21 | 1980-08-28 |
-
1979
- 1979-10-30 JP JP14028479A patent/JPS5664347A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54116930A (en) * | 1978-03-03 | 1979-09-11 | Canon Inc | Image forming element for zerography |
| JPS54121743A (en) * | 1978-03-14 | 1979-09-21 | Canon Inc | Electrophotographic image forming member |
| JPS54145539A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Electrophotographic image forming material |
| JPS5614241A (en) * | 1979-07-16 | 1981-02-12 | Matsushita Electric Ind Co Ltd | Electrophotographic receptor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5664347A (en) | 1981-06-01 |
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