JPS6335026B2 - - Google Patents
Info
- Publication number
- JPS6335026B2 JPS6335026B2 JP55028956A JP2895680A JPS6335026B2 JP S6335026 B2 JPS6335026 B2 JP S6335026B2 JP 55028956 A JP55028956 A JP 55028956A JP 2895680 A JP2895680 A JP 2895680A JP S6335026 B2 JPS6335026 B2 JP S6335026B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- layer
- gas
- photoconductive
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 29
- 229910052799 carbon Inorganic materials 0.000 claims description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 23
- 229910052731 fluorine Inorganic materials 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- 239000001257 hydrogen Substances 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 19
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 18
- 239000011737 fluorine Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052798 chalcogen Inorganic materials 0.000 claims description 4
- 150000001787 chalcogens Chemical class 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 91
- 239000007789 gas Substances 0.000 description 49
- 238000000034 method Methods 0.000 description 26
- 239000000758 substrate Substances 0.000 description 24
- 108091008695 photoreceptors Proteins 0.000 description 21
- 238000000354 decomposition reaction Methods 0.000 description 18
- 239000010408 film Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 150000002484 inorganic compounds Chemical class 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2895680A JPS56125881A (en) | 1980-03-06 | 1980-03-06 | Optical semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2895680A JPS56125881A (en) | 1980-03-06 | 1980-03-06 | Optical semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56125881A JPS56125881A (en) | 1981-10-02 |
| JPS6335026B2 true JPS6335026B2 (fr) | 1988-07-13 |
Family
ID=12262860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2895680A Granted JPS56125881A (en) | 1980-03-06 | 1980-03-06 | Optical semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56125881A (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
| JPS56161551A (en) * | 1980-05-16 | 1981-12-11 | Canon Inc | Image forming member for electrophotography |
| JPS5721875A (en) * | 1980-07-14 | 1982-02-04 | Canon Inc | Photosensor |
| JPS5752178A (en) * | 1980-09-13 | 1982-03-27 | Canon Inc | Photoconductive member |
| EP0151754B1 (fr) * | 1984-02-14 | 1991-12-18 | Energy Conversion Devices, Inc. | Procédé de fabrication d'un élément photoconducteur |
| JP2636276B2 (ja) * | 1987-11-06 | 1997-07-30 | ミノルタ株式会社 | 感光体 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
| JPS55127561A (en) * | 1979-03-26 | 1980-10-02 | Canon Inc | Image forming member for electrophotography |
-
1980
- 1980-03-06 JP JP2895680A patent/JPS56125881A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
| JPS55127561A (en) * | 1979-03-26 | 1980-10-02 | Canon Inc | Image forming member for electrophotography |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56125881A (en) | 1981-10-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003092200A (ja) | 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置 | |
| JPS639219B2 (fr) | ||
| JP3037461B2 (ja) | 光起電力素子 | |
| CA1294181C (fr) | Methode de fabrication d'une pellicule formee par depot | |
| JP4035298B2 (ja) | プラズマ処理方法、半導体装置の製造方法および半導体装置 | |
| JPS6335026B2 (fr) | ||
| JPS628781B2 (fr) | ||
| JPS6258552B2 (fr) | ||
| JPS6247303B2 (fr) | ||
| WO1985002691A1 (fr) | Organe photosensible pour electrophotographie | |
| JPS60130747A (ja) | 光導電部材 | |
| JPS639217B2 (fr) | ||
| JPH0150905B2 (fr) | ||
| JPS6161102B2 (fr) | ||
| US5278015A (en) | Amorphous silicon film, its production and photo semiconductor device utilizing such a film | |
| JPS639218B2 (fr) | ||
| JPH0426106B2 (fr) | ||
| EP0174241B1 (fr) | Méthode de production des éléments photoconductifs isolants avec une bande d'exposition dynamique large | |
| US4803139A (en) | Electrophotographic photoreceptor | |
| US5152833A (en) | Amorphous silicon film, its production and photo semiconductor device utilizing such a film | |
| JP2528283B2 (ja) | 超薄膜積層構造を有する光受容部材 | |
| US4704343A (en) | Electrophotographic photosensitive member containing amorphous silicon and doped microcrystalline silicon layers | |
| US4762761A (en) | Electrophotographic photosensitive member and the method of manufacturing the same comprises micro-crystalline silicon | |
| JPH0652428B2 (ja) | 光導電体 | |
| JPS58219560A (ja) | 電子写真感光体 |