JPS6335026B2 - - Google Patents

Description

[Detailed description of the invention]

The present invention relates to an optical semiconductor device. Conventionally, electrophotographic photoreceptors, such as amorphous
A photoreceptor made of Se or amorphous Se doped with impurities such as As, Te, Sb, or Bi, or a photoreceptor made of CdS or the like is used. These photoreceptors are toxic, and amorphous Se crystallizes at temperatures above about 100°C, resulting in very poor thermal stability, and the photoreceptor film has poor mechanical strength and liquid development resistance, making it difficult to use for electrophotography. As a body, there are still many problems that need to be resolved. Further, a problem with photoelectric conversion elements lies in the cost in the manufacturing process, particularly in the manufacturing cost of semiconductor materials such as single crystal silicon, polycrystalline silicon, or polycrystalline compound semiconductors. For example, the usual method for producing a silicon single crystal commonly used in photovoltaic devices is to extract a single crystal from a silicon melt by the Czyochralski method or ribbon crystal growth method, and then slice it thinly. This includes the step of cutting or cutting. However, this method requires a lot of thermal energy during the process, which naturally increases manufacturing costs. Furthermore, when the above-mentioned semiconductor materials are used, it is impossible to increase the area of the semiconductor material to be manufactured, and therefore the photoelectric conversion element obtained must be made by arranging many small light-receiving surface elements. Unavoidably, the most desirable photoelectric conversion element with a large light-receiving area cannot be obtained. In recent years, photoreceptors such as those used in electrophotographic photoreceptors, which discharge charges on a photoconductive layer by imagewise exposure to form an electrostatic latent image pattern, have been developed.
Alternatively, optical semiconductor elements such as photodetectors that detect light energy such as sunlight and extract it as current or voltage, and photoelectric conversion elements such as solar cells (photovoltaic cells) that directly convert the light energy into electrical energy. A technique has been proposed to compensate for the drawbacks of these conventional photoreceptors and photoelectric conversion elements by using amorphous silicon as the photoconductive layer in order to manufacture them inexpensively and over a large area. This technology uses, for example, glow discharge decomposition of silane (SiH ₄ ) gas or high-frequency sputtering of silicon in an atmosphere containing hydrogen to form an amorphous silicon film. - Good dark specific resistance can be achieved by compensating defects in Si bonds with hydrogen etc. and reducing the average density of states of localized levels in the energy gap to 10 ¹⁷ - 10 ¹⁸ /cm ³ and performing impurity doping. Alternatively, it is intended to form a photoconductive layer having photoconductivity. These methods make it possible to produce non-polluting, thermally and chemically stable photoreceptors or silicon photoconductor thin films with a larger area than conventional single crystal wafers, and the resulting optical semiconductor devices are also low-cost. There is a possibility of a large light-receiving area. However, when a conductive support is made of metal, glass, or an organic resin sheet in an optical semiconductor device, cracks may occur in the photoconductive layer due to the difference in thermal expansion coefficient between the amorphous silicon of the photoconductive layer and the conductive support. A phenomenon in which the p-type impurity doped layer is formed by B ₂ H ₆ gas or in particular caused by an increase in internal strain in the doped layer due to powder generation occurs. Furthermore, when metal or organic resin is used as a flexible conductive support, cracks may occur due to stress caused by bending. This is considered to be due to the fact that the adhesive strength between the conductive support and the amorphous silicon photoconductive layer and the film strength of the photoconductive layer are particularly weak. The present inventors have determined that the composition ratio C/Si, mainly composed of silicon and carbon, between the photoconductive layer mainly composed of amorphous silicon and the conductive support is 5 to 150 atomic %.
By providing an intermediate layer made of amorphous material,
It has been found that it is possible to obtain an optical semiconductor device which solves the problems of crack formation and peeling without impairing the photoelectric properties. Furthermore, the localized level density of the amorphous material mainly composed of silicon and carbon used as the intermediate layer in the present invention can be reduced to 10 ¹⁸ cm ^-3 or less by containing hydrogen and/or fluorine. It is possible to lower the resistance by controlling the valence electrons.
By carrying out heavy doping, it is possible to form an ohmic contact layer with the conductive support. Therefore, an object of the present invention is to create an intermediate layer made of an amorphous material mainly composed of silicon and carbon, which is thermally and chemically stable, has strong mechanical strength, and strong adhesive strength with a substrate. The object of the present invention is to provide a low-cost optical semiconductor element with a large light-receiving area, strong adhesive strength and mechanical strength, and without impairing photoconductive properties by providing it between a photoconductive layer and a conductive support. The present invention will be explained in detail below. The optical semiconductor device of the present invention has the following technical configuration. That is, the present invention provides: (1) In an optical semiconductor device formed by laminating a conductive support and an amorphous silicon photoconductive layer, a silicon layer is provided between the conductive support and the photoconductive layer. Mainly composed of carbon, hydrogen and/or fluorine (composition ratio C/Si is 5 to 150 atom%, when hydrogen is contained, the hydrogen amount is 1 to 40 atom%, when fluorine is contained) Fluorine content is 0.01 to 20
%), and the photoconductive layer is mainly composed of silicon or mainly composed of silicon and one or more of oxygen, nitrogen, boron, germanium, chalcogen, and halogen. and (2) an optical semiconductor device comprising a conductive support, a photoconductive layer of amorphous silicon, and a metal electrode layer laminated in this order, wherein the conductive support Between the body and the photoconductive layer, silicon, carbon, hydrogen and/or fluorine are mainly present (composition ratio C/Si is 5 to 150 atomic %, and when hydrogen is contained, the amount of hydrogen is 1 to 40 atomic %). atomic%, and when fluorine is contained, the amount of fluorine is 0.01 to 20 atomic%). , boron, germanium, chalcogen, and halogen. In the present invention, the conductive support is, for example, a plate or film made of an insulating material such as glass, ceramic, fused silica, polyethylene terephthalate, or an organic resin such as polyimide or polyamide.
For example, metals such as Ni, Al, Mo, Cr, Fe, Ni−
Alloys such as Cr, Al-Si, inorganic compounds such as SnO ₂ and In ₂ O ₃ , and organic semiconductors are uniformly deposited in a thickness of 50 Å to 5 μm.
Preferably, it is attached to a thickness of 0.1 μm to 0.5 μm to provide a conductive surface, or stainless steel,
Selected from plates, films, and foils made of Al, Ti, low-resistance organic resins, etc. The shape of the support may be any shape such as a plate, belt, or cylinder, and the shape is determined as desired. teeth,
It is desirable to have an endless belt shape or a cylindrical shape. In the present invention, the photoconductive intermediate layer made of an amorphous material mainly composed of silicon and carbon can be formed on the support by a glow discharge decomposition method, a sputtering method, an ion implantation method, etc., and can be formed as desired. The method is appropriately selected depending on factors such as the characteristics of the optical semiconductor device used, and it is also effective to use these methods in combination. When forming the photoconductive intermediate layer, the composition of silicon and carbon and the amount of hydrogen and/or fluorine added are controlled. In other words, in the glow discharge decomposition method, it is a gas such as silane or a silane derivative.
SiH ₄ , Si ₂ H ₆ , Sicl ₄ , SiHcl ₃ , SiH ₂ cl ₂ , SiF ₄ ,
Si(CH ₃ ) ₄ , etc., or these gases are converted into H ₂ , He, Ar,
Gas diluted with inert gas such as Ne and CH ₄ ,
C ₂ H ₂ , C ₂ H ₄ , C ₅ H ₆ , C ₃ H ₄ , C ₃ H ₆ , C ₃ H ₈ ,
C ₂ H ₃ F, CH ₃ F, CF ₄ , CH ₃ cl, C ₅ H ₂ F ₂ , C ₂ H ₃ F,
C ₂ clF ₃ , C ₃ F ₈ , Ccl ₂ F ₂ , Ccl ₃ F, C ₂ H ₃ Br, F ₂ ,
At least one type of gas such as organic gas such as HF, BrF ₃ , or fluorine-based gas is introduced into the glow discharge decomposition device, a glow discharge is generated using high frequency or DC power, the introduced gas is decomposed and reacted, and light is generated. It forms a conductive film. In addition, in the sputtering method, a single crystal or polycrystalline target material with a desired composition ratio of carbon and silicon, or a target material made of silicon or carbon alone is bombarded with ion bombardment such as Ar generated by high frequency or direct current glow discharge. A photoconductive film is formed by reacting the target composition with the above-mentioned organic gas, fluorine-based gas, or H ₂ gas introduced. Further, the well-known ion implantation method can also be used to form the film by implanting ions of silicon, carbon, hydrogen, fluorine, etc. into amorphous silicon or silicon-carbide film. The photoconductive intermediate layer made of an amorphous material mainly composed of silicon and carbon in the present invention can be formed by the above method or a combination thereof, and the composition ratio C/Si of carbon and silicon is 5. % to 150 atomic %, and it has been found that it is preferable to contain hydrogen or hydrogen and fluorine in order to increase the dark specific resistance to 10 ¹⁰ Ω-cm or more and to control valence electrons by doping with impurities. Ivy. The amount of fluorine added to the amorphous material mainly composed of silicon and carbon is preferably 0.01 atomic % to 20 atomic %, more preferably 0.5 atomic % to 10 atomic %. Further, the amount of hydrogen is desirably 1 atomic % to 40 atomic %, more preferably 10 atomic % to 30 atomic %. In particular, the amount of hydrogen added can be controlled by controlling the temperature of the deposition substrate and/or the amount of the starting material used for adding hydrogen introduced into the system. Furthermore, after forming an amorphous silicon layer containing carbon, the layer may be exposed to an activated hydrogen atmosphere. Further, at this time, one method is to heat the amorphous material layer mainly composed of silicon and carbon to a temperature below the crystallization temperature. The conductivity type of an amorphous material mainly composed of silicon and carbon can be controlled by doping with impurities during manufacturing, and the amount of doped impurities can be controlled to achieve the desired electrical conductivity at a substrate temperature of 200 to 250°C.・It is determined appropriately depending on the optical properties, but in the case of P-type conduction, impurities in group A of the periodic table are usually
10 ^-3 to 10 atomic %, preferably 10 ^-2 to 5 atomic %,
In the case of n-type conduction, the impurity of Group A of the periodic table is usually 10 ^-5 to 10 atomic %, preferably 10 ^-4 to 5 atomic %.
It is desirable that this is done. However, the amount of the doped impurity varies depending on conditions such as substrate temperature, and is not limited to this. The doping method for these impurities is different from the manufacturing method for forming the amorphous layer. For example, in the glow discharge decomposition method, B ₂ H ₆ , AsH ₃ , PH ₃ , Sbcl ₅
A gas such as the like is introduced and activated by glow discharge, and doping is performed by exposing the amorphous layer to an atmospheric gas during or after formation. Further, in the sputtering method, doping is performed in the same manner as in the glow discharge decomposition method, or doping is performed by sputtering single doping atoms at the same time. In the ion implantation method, ions of each doping atom may be implanted. The layer thickness of the photoconductive intermediate layer in the present invention is 0.005~
It is 1 μm, preferably 0.01 to 0.5 μm. Even if the amorphous silicon photoconductive layer in the present invention is made of only silicon, O,
It may contain B, Ge, chalcogen (S, Se, Te), or halogen, and can be formed by the same method as the method for forming a photoconductive intermediate layer mainly composed of silicon and carbon. It can be formed by a decomposition reaction using a gas such as silane or a silane derivative, or a dilution gas with an inert gas. Further, the impurity doping method and doping amount for controlling conductivity by controlling valence electrons are also the same as those for the photoconductive intermediate layer. The layer thickness of the amorphous silicon photoconductive layer in the present invention is 0.01 to 100 μm, preferably 0.3 to 50 μm. Hereinafter, a case in which the optical semiconductor device of the present invention is manufactured particularly by a glow discharge decomposition method will be explained based on the drawings. Next, the case where the optical semiconductor device of the present invention is manufactured by glow discharge decomposition method will be described with reference to FIG. 1, which shows a conceptual diagram of a typical capacitively coupled glow discharge decomposition apparatus. To explain the present invention with reference to FIG. 1, in the vacuum chamber 123 of the capacitively coupled glow discharge decomposition apparatus 100, a substrate support member and a substrate heating member are provided facing above the glow discharge electrode 101 and kept at a predetermined interval. Part 10
2 is installed, and furthermore, a substrate 103 for forming the amorphous layer is fixed to the substrate support member 102. Further, the glow discharge electrode 101 is electrically connected to a high frequency power source 104, and when high frequency power is applied, the glow discharge electrode 101 mainly
A glow discharge is generated in the space between the substrate 103 and the substrate 103. A gas introduction pipe is connected to the vacuum chamber 123, and gas cylinders 116, 117, 118, 119 are connected to the vacuum chamber 123.
Therefore, each gas flowmeter 112, 113, 11
4,115 through the needle valve 108,1
09, 110, and 111, a predetermined gas is introduced into the vacuum chamber 123 while controlling the flow rate. Further, a filter 107 and a needle valve 106 are installed in the gas introduction system to remove particles in the gas. Furthermore, the vacuum chamber 12
An exhaust device is installed at the bottom of the pump 3 via a diffusion pump valve 122 and a rotary pump valve 121. To form a desired silicon- and carbon-based photoconductive intermediate layer and an amorphous silicon photoconductive layer on the substrate 103 using the glow discharge decomposition apparatus shown in FIG. The substrate 103 that has been subjected to cleaning treatment is attached to the supporting member and the heating member 102.
Fixed to. Next, the vacuum chamber 123 is evacuated to a back pressure of preferably 1×10 ^-5 torr or less using an exhaust device, the substrate temperature is maintained at a predetermined level using a substrate heating member, the diffusion pump valve 122 is closed, and the rotary pump valve 123 is closed. Open and exhaust only with the rotary pump. And gas cylinders 116, 117, 11
Needle valve 106, 108 from 8,119,
Flow meters 112, 1 by 109, 110, 111
13, 114, and 115, a predetermined gas is introduced while controlling and monitoring the flow rate. Here cylinder 11
No. 6,117 is filled with a raw material gas for forming a layer of silicon or an amorphous material mainly composed of silicon and carbon, and includes the above-mentioned gas such as silane or silane derivative or its diluted gas, and the above-mentioned organic gas. or fluorine gas, or a mixed gas thereof may be used. Also, cylinders 118 and 119 are PH ₃ or
Filled with doping gas such as B ₂ H ₆ . The composition ratio of silicon and carbon in the photoconductive intermediate layer mainly composed of silicon and carbon or the doping impurity of the photoconductive intermediate layer and the photoconductive layer can be arbitrarily varied by controlling the flow rate, and can also be changed in the film thickness direction. The outlet of the gas introduction pipe into the vacuum chamber is the substrate 10.
3 and glow discharge electrode 101 so that the gas can sufficiently reach the space between
It may be installed in a ring shape near 01 to generate a gas flow. Next, the rotary pump valve 121 is adjusted to maintain the back pressure of the vacuum chamber 123 at a degree of vacuum of 10 ^-2 Torr to 10 Torr, and a high frequency voltage is applied from the high frequency power supply 104 to the glow discharge electrode 101 to generate a glow discharge. . The appropriate frequency of the high frequency to be applied to the glow discharge electrode 101 is 0.1 MHz to 5 GHz. Here, the voltage applied to the glow discharge electrode 101 may be a DC voltage, and is suitably 0.3KV to 5KV. Further, the substrate support member and the substrate heating member 102 may be grounded, but in order to avoid collision of secondary electrons due to glow discharge, the voltage should be between 50V and 500V.
may be negatively biased. Furthermore, although the glow discharge decomposition apparatus 100 is of a capacitive coupling type,
It may be an inductively coupled type in which a coiled glow discharge electrode is disposed outside of 4. In addition, in the sputtering method, an apparatus having a structure similar to that shown in FIG. 1 can usually be used, and a target material having a desired composition ratio is placed on the glow discharge electrode shown in FIG. 1, and high frequency or DC sputtering is performed. When doping with impurities, a doping gas may be introduced in the same manner as in the glow discharge decomposition method. In the present invention, it is preferable that the temperature of the substrate 103 be in the range of 30°C to 400°C, more preferably 50°C to 300°C when performing the glow discharge decomposition. Maintaining the substrate temperature is achieved by the substrate support member and substrate heating member 102. Further, the deposition rate of the amorphous layer is also a factor that controls the physical properties of the photoconductive layer, and is usually preferably 0.5 to 1000 Å/sec, but can also be increased to 1000 Å/sec or more. Various embodiments of the optical semiconductor device provided with the photoconductive intermediate layer mainly composed of silicon and carbon of the present invention are described in the second section.
This is shown in FIGS. 6 to 6. Although FIGS. 2 and 3 show an example of application of a photoreceptor of an optical semiconductor element as an electrophotographic photoreceptor, the present invention is not limited thereto. The conductive supports 201, 301 of the electrophotographic photoreceptors 200, 300 are composed of supports 202, 302 and conductive layers 203, 303, but if the supports themselves are conductive, the conductive layers 203, 303 are not necessarily required. Reference numerals 204 and 304 are photoconductive intermediate layers mainly composed of carbon and silicon formed by the method of the present invention, and impurities are undoped or doped. Further, 205 and 305 are photoconductive layers made of amorphous silicon, which are non-doped or doped. Reference numeral 306 is an antireflection or surface protection layer made of an inorganic compound or an organic resin, or a charge transport layer in a so-called functionally separated electrophotographic photoreceptor, and is made of an inorganic semiconductor or an organic semiconductor. Then, the electrophotographic photoreceptor surface 207, 307 is connected to the conductive support 20.
A permanent copy can be obtained by being positively or negatively charged with respect to 1,301 and transferring a positively or negatively charged latent image formed by imagewise exposure using liquid development, cascade development, or magnetic brush development. On the other hand, although FIGS. 4 to 6 show examples of application of optical semiconductor devices as photoelectric conversion devices, this is not necessarily the case. In FIG. 4, 400 is an example of a Schottky barrier type photoelectric conversion element, and 401 is a conductive support, which is composed of a support 402 and a conductive layer 403. When the support is conductive, the conductive layer 403 is not necessarily required. Reference numeral 404 denotes a photoconductive intermediate layer of the present invention, which is doped n-type and is in ohmic contact with the conductive layer 403. 405 is a photoconductive layer made of amorphous silicon, which is non-doped or n-type doped. 406 is a metal or inorganic compound layer forming a Schottky barrier;
7 is a comb-shaped, grid-shaped or mesh-shaped electrode, and 40
8 is an antireflection layer made of an inorganic compound or an organic resin, but it is not necessarily necessary when the Schottky barrier forming electrode 406 is made of an inorganic compound and also serves as an antireflection layer. FIGS. 5 and 6 show an example of a p-i-n type photoelectric conversion element, in which the stacked structure of p-type and n-type photoconductive layers is reversed. 504 and 604 are p-type and n-type heavily doped photoconductive interlayers based on silicon and carbon, respectively, of the present invention. 505 and 605 are photoconductive layers made of amorphous silicon, and 506 and 606 are non-doped or n
a photoconductive active layer doped in the mold, and 507 and 6
07, each consisting of heavily doped n-type and p-type layers. Further, 508 is a metal electrode layer, 608 is a layer made of tin oxide, indium oxide, or a compound thereof and serves as an antireflection layer and an electrode, and 611 is a grid-like electrode. 409,509,609
are lead wires for taking out current and/or voltage, and 410, 510, and 610 are incident lights. As described above, the present invention provides a low-cost optical semiconductor element that does not impair photoconductive properties, has strong mechanical strength, has a large light-receiving area that does not cause peeling, and can also use a flexible support. . The present invention will be explained in more detail with reference to Examples below. (Example 1) Using various conductive supports as shown below, an electrophotographic photoreceptor as a photoreceptor in the embodiment shown in Figure 2 was produced using a capacitively coupled glow discharge decomposition apparatus as shown in Figure 1. did.

[Table] A photoconductive intermediate _layer mainly composed of silicon and carbon is formed on the conductive support shown in the above table which has been thoroughly cleaned.
Ar, CF ₄ and B ₂ H ₆ as p-type doping gas
It was formed under the following conditions by controlling gas introduction. (Introduced gas) ・SiH ₄ (Ar dilution, 10.7%) Gas flow rate: 140
cc/min ・ CF ₄ gas: partial pressure ratio of CF ₄ /SiH ₄ = 1.1 ・ B ₂ H ₆ (Ar dilution, 1.0%) gas 2% by volume (other conditions) ・ Back pressure of vacuum chamber: 6×10 ^{- 6} torr ・High frequency frequency and power: 13.56MHz, 70W
(0.29W/cm ² ) ・Substrate temperature: 240℃ ・Deposition rate: 300Å/min ・Vacuum degree during discharge: 0.4torr ・Distance between cathode and substrate: 2.3cm The photoconductive intermediate layer was deposited with a thickness of 500Å under the above conditions. Furthermore, a photoconductive layer made of amorphous silicon was successively formed in the same apparatus by controlling the introduction of SiH ₄ , Ar, and B ₂ H ₆ gases. That is, using the same gas as the above conditions,
SiH ₄ gas 100c.c./min, _{B 2} H ₆ gas 0.05% by volume
The introduction was controlled and a thickness of 10 μm was deposited, completing an electrophotographic photosensitive plate. The composition of the photoconductive intermediate layer is Si _0.83
ESCA analysis determined that C was _0.17 . Using this photosensitive plate, first, the surface of the photosensitive plate was charged by 8KV corona discharge, image exposure was performed at 5lux-sec to form an electrostatic latent image, and then developed with toner using a liquid development method. When transferred and fixed onto transfer paper, a clear image with high image density and no fogging could be obtained. Furthermore, using the same photosensitive plate, the temperature was 45℃, the humidity was 75%,
2-hour wet thermometer test and Shinto Kagakusha's
Sapphire needle diameter with HEIDON−18 scratch tester
When the film strength was compared under measurement conditions of 0.05 mmφ, the results shown in the following table were obtained.

[Table] Sample 5 was made by depositing only an amorphous silicon photoconductive layer to a thickness of 10 μm on the same conductive support as in 4, and it was clear that the film was peeled off by providing a photoconductive intermediate layer. It can be seen that the film strength is improved by more than 60%. Further, even when a few samples were bent, neither film peeling nor cracking occurred. (Example 2) Example 1 using a conductive support as shown below.
A photoelectric conversion element of the embodiment shown in FIG. 5 was manufactured using the same formation method.

[Table] First, the conductive intermediate layer was prepared by changing the substrate temperature in Example 1.
300℃ as a p-type heavily doped layer under the condition of 150℃
6000 Å as a non-doped layer of amorphous silicon using only SiH ₄ and Ar gas.
Furthermore, 1% by volume of PH ₃ gas was added to form an n-type heavily doped layer with a thickness of 400 Å, and after taking it out into the atmosphere, Ni-Cr, Ni-Cr, etc. were deposited by electron beam evaporation.
A metal electrode layer was formed by thermally depositing Al to a thickness of 150 and 1500 Å, respectively, and the photoelectric conversion element was completed. In addition, a pin-type photoelectric conversion element consisting only of an amorphous silicon photoconductive layer was fabricated, and a wet thermometer test was simultaneously conducted under the same conditions as in Example 1.
The sample did not peel off, but the sample consisting only of an amorphous silicon photoconductive layer did. Further, even when sample 2 was bent, no peeling or cracking occurred. When sample 1 was irradiated with light at 70mW/ ^cm2 , the open circuit voltage was 0.65volt.
obtained the value of (Example 3) Using the same conductive support as in Example 1, an electrophotographic photoreceptor in the embodiment shown in FIG. 2 was produced. Here, SiH ₄ , Ar, CH ₄ is used as the photoconductive intermediate layer.
Si _0.62 by glow discharge decomposition of gas mixture
An electrophotographic photoreceptor was completed by depositing a 700 Å thick film with a composition of C _0.38 , and further depositing a 10 μm thick amorphous silicon photoconductive layer under the same conditions as in Example 1 using B ₂ H ₆ gas as a doping gas. A similar wet thermometer test was conducted, but no film peeling or cracking occurred.

[Brief explanation of drawings]

FIG. 1 is a conceptual diagram of a glow discharge decomposition apparatus for carrying out the present invention, FIGS. 2 and 3 are sectional views of an electrophotographic photoreceptor as a photoreceptor of an optical semiconductor device of the present invention, and FIGS. The figure is a sectional view of a photoelectric conversion element of an optical semiconductor element of the present invention. 200,300: Electrophotographic photoreceptor, 400,5
00,600: Photoelectric conversion element, 201,301,
401,501,601: conductive support, 20
2,302,402,502,602: support,
203, 303, 403, 503, 603: conductive layer, 204, 304, 404, 504, 604:
Photoconductive intermediate layer, 205, 305, 405, 50
5,605: Photoconductive layer, 306: Antireflection, surface protection, charge transport layer, 406: Schottky barrier forming electrode layer, 207,307: Photoconductive layer surface, 4
07,611: Grid-like, comb-like, mesh-like electrode, 40
8,608: antireflection layer, 508: metal electrode layer,
409,509,609: Lead wire, 410,5
10,610: Incident light.

Claims (1)

[Scope of Claims] 1. An optical semiconductor element formed by laminating a conductive support and a photoconductive layer of amorphous silicon, in which silicon, carbon, and hydrogen are interposed between the conductive support and the photoconductive layer. and/or fluorine. (0.01 to 20 atomic %) an intermediate layer made of an amorphous material; An optical semiconductor device characterized by having a main body. 2. In an optical semiconductor element formed by laminating a conductive support, an amorphous silicon photoconductive layer, and a metal electrode layer in this order, silicon and carbon are present between the conductive support and the photoconductive layer. Mainly composed of hydrogen and/or fluorine (composition ratio C/Si is 5 to 150
atomic %, when hydrogen is contained, the hydrogen content is 1 to 40 atomic %, and when fluorine is contained, the fluorine content is 0.01 to 20 atomic %); An optical semiconductor device characterized in that the photoconductive layer is mainly made of silicon or mainly contains silicon and one or more of oxygen, nitrogen, boron, germanium, chalcogen, and halogen.