JPS6385098A - ３−５族化合物半導体の気相成長方法 - Google Patents

３−５族化合物半導体の気相成長方法

Info

Publication number
JPS6385098A
JPS6385098A JP61228605A JP22860586A JPS6385098A JP S6385098 A JPS6385098 A JP S6385098A JP 61228605 A JP61228605 A JP 61228605A JP 22860586 A JP22860586 A JP 22860586A JP S6385098 A JPS6385098 A JP S6385098A
Authority
JP
Japan
Prior art keywords
compound
group
growth
group iii
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61228605A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0535719B2 (enExample
Inventor
Kazuo Mori
一男 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61228605A priority Critical patent/JPS6385098A/ja
Publication of JPS6385098A publication Critical patent/JPS6385098A/ja
Publication of JPH0535719B2 publication Critical patent/JPH0535719B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP61228605A 1986-09-26 1986-09-26 ３−５族化合物半導体の気相成長方法 Granted JPS6385098A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61228605A JPS6385098A (ja) 1986-09-26 1986-09-26 ３−５族化合物半導体の気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61228605A JPS6385098A (ja) 1986-09-26 1986-09-26 ３−５族化合物半導体の気相成長方法

Publications (2)

Publication Number Publication Date
JPS6385098A true JPS6385098A (ja) 1988-04-15
JPH0535719B2 JPH0535719B2 (enExample) 1993-05-27

Family

ID=16878968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61228605A Granted JPS6385098A (ja) 1986-09-26 1986-09-26 ３−５族化合物半導体の気相成長方法

Country Status (1)

Country Link
JP (1) JPS6385098A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009081192A (ja) * 2007-09-25 2009-04-16 Sumitomo Electric Ind Ltd 半導体光素子を作製する方法、及びｉｉｉ−ｖ化合物半導体結晶を成長する方法
US7781326B2 (en) 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer
US20100260222A1 (en) * 2009-04-14 2010-10-14 Sony Corporation Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123072A (en) * 1977-04-01 1978-10-27 Nec Corp Vapor phase growth method of gaas

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123072A (en) * 1977-04-01 1978-10-27 Nec Corp Vapor phase growth method of gaas

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781326B2 (en) 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer
US9012334B2 (en) 2001-02-02 2015-04-21 Applied Materials, Inc. Formation of a tantalum-nitride layer
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
JP2009081192A (ja) * 2007-09-25 2009-04-16 Sumitomo Electric Ind Ltd 半導体光素子を作製する方法、及びｉｉｉ−ｖ化合物半導体結晶を成長する方法
US20100260222A1 (en) * 2009-04-14 2010-10-14 Sony Corporation Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same
US8658449B2 (en) * 2009-04-14 2014-02-25 Sony Corporation Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0535719B2 (enExample) 1993-05-27

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