JPS6381841A - High-frequency integrated circuit - Google Patents

High-frequency integrated circuit

Info

Publication number
JPS6381841A
JPS6381841A JP22676586A JP22676586A JPS6381841A JP S6381841 A JPS6381841 A JP S6381841A JP 22676586 A JP22676586 A JP 22676586A JP 22676586 A JP22676586 A JP 22676586A JP S6381841 A JPS6381841 A JP S6381841A
Authority
JP
Japan
Prior art keywords
signal terminal
output signal
auxiliary
input signal
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22676586A
Other languages
Japanese (ja)
Inventor
Yoshinobu Kadowaki
門脇 好伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP22676586A priority Critical patent/JPS6381841A/en
Publication of JPS6381841A publication Critical patent/JPS6381841A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To facilitate the realization of a multistage cascade connection by a method wherein an input signal terminal and output signal terminal are connected through the intermediary of DC blocking capacitors, respectively, to an auxiliary input signal terminal and auxiliary output signal terminal. CONSTITUTION:An auxiliary input signal terminal 40 and auxiliary output signal terminal 50 are provided, are connected to an input signal terminal 4 and output signal terminal 5, respectively, through DC blocking capacitors 3a, and are located near the input signal terminal 4 and output signal terminal 5. When MMIC amplifier chips of this design are connected in cascade, connection of signal terminals between chips are accomplished by connecting the auxiliary input signal terminal 40 and output signal terminal 5 or the auxiliary output signal terminal 50 and input signal terminal 4. In this way, DC bias may be divided between chips. Accordingly, external DC blocking capacitors, as required in a conventional MMIC amplifier cascade connection design, are not needed in this design, which facilitates the realization of a multistage cascade connection.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は高周波集積回路の回路構成に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a circuit configuration of a high frequency integrated circuit.

〔従来の技術〕[Conventional technology]

以下、高周波集積回路として、モノリシックマイクロ波
集積回路増幅器(MMIC増幅器)を例にとって説明す
る。
Hereinafter, a monolithic microwave integrated circuit amplifier (MMIC amplifier) will be explained as an example of a high frequency integrated circuit.

第4図は従来のMMIC増幅器の回路構成を示す回路図
である0図において、1はトランジスタ、2は抵抗、3
は直流阻止用コンデンサ、4は入力信号端子、5は出力
信号端子、6はトランジスタの直流バイアス印加端子で
ある。
Figure 4 is a circuit diagram showing the circuit configuration of a conventional MMIC amplifier. In Figure 0, 1 is a transistor, 2 is a resistor, and 3
4 is an input signal terminal, 5 is an output signal terminal, and 6 is a DC bias application terminal of the transistor.

次に動作について説明する。入力信号端子4に印加され
た信号はトランジスタ1により増幅され、出力信号端子
5から取り出される。ここで、トランジスタ1を動作さ
せるための直流バイアスは直流バイアス印加端子6から
供給され、トランジスタ相互の直流バイアスの分離は直
流阻止用コンデンサ3によってなされる。
Next, the operation will be explained. A signal applied to the input signal terminal 4 is amplified by the transistor 1 and taken out from the output signal terminal 5. Here, a DC bias for operating the transistor 1 is supplied from a DC bias application terminal 6, and the DC bias between the transistors is separated by a DC blocking capacitor 3.

第5図はこのMMIC増幅器の各々の端子部分のパター
ン配置を示すチップパターンの概略図である。MM I
 C増幅器チップは第6図に示すように、適当なパッケ
ージ7に装着され、入力信号端子4.出力信号端子5.
および直流バイアス印加端子6がパッケージ7の相当す
るリード部41゜51.61に接続されて用いられる。
FIG. 5 is a schematic diagram of a chip pattern showing the pattern arrangement of each terminal portion of this MMIC amplifier. MM I
The C amplifier chip is mounted in a suitable package 7, as shown in FIG. 6, and connected to input signal terminals 4. Output signal terminal5.
The DC bias application terminal 6 is used by being connected to the corresponding lead portion 41.degree.51.61 of the package 7.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来のMMIC増幅器は以上のように構成されているの
で、更に多段の増幅器を構成する場合、第7図に示すよ
うにMMIC増幅器チップ間の直流バイアス分離のため
に、外付けの直流阻止用コンデンサ31を必要とし、節
単に縦続接続できないという問題点があった。
Since the conventional MMIC amplifier is configured as described above, when configuring a multi-stage amplifier, an external DC blocking capacitor is used to separate the DC bias between the MMIC amplifier chips as shown in Figure 7. 31, and there was a problem that the nodes could not be simply connected in cascade.

この発明は上記のような問題点を解消するためになされ
たもので、多段の縦続接続を容易に実現することのでき
る高周波集積回路を得ることを目的とする。
The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a high-frequency integrated circuit that can easily realize multi-stage cascade connection.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る高周波集積回路は、従来の入力。 The high frequency integrated circuit according to the present invention has a conventional input.

及び出力信号端子に加え、該入力、及び出力信号端子に
それぞれ直流■土用コンデンサを介して接続した補助入
力、及び補助出力信号端子を設けたものである。
In addition to the input and output signal terminals, an auxiliary input and an auxiliary output signal terminal are connected to the input and output signal terminals, respectively, via DC/DC capacitors.

[作用〕 この発明においては、補助入力、又は補助出力信号端子
を、縦続接続する回路の出力、又は入力信号端子に接続
するようにしたので、多段に縦続接続する場合の高周波
集積回路チップ間の直流阻止用コンデンサを不要とする
ことができる。
[Function] In this invention, since the auxiliary input or auxiliary output signal terminal is connected to the output or input signal terminal of the cascade-connected circuit, the auxiliary input or auxiliary output signal terminal is connected to the output or input signal terminal of the cascade-connected circuit. It is possible to eliminate the need for a DC blocking capacitor.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図はこの発明の一実施例による高周波集積回路であ
るMM I C増幅器を示し、第2図は第1図に示す回
路のチップパターンの概略図である。
FIG. 1 shows an MM IC amplifier which is a high frequency integrated circuit according to an embodiment of the present invention, and FIG. 2 is a schematic diagram of a chip pattern of the circuit shown in FIG.

両図において、1〜6は従来例と同じものを示し、40
は補助入力信号端子、50は補助出力信号端子であり、
両端子40.50とも直流阻止用コンデンサ3aを介し
てそれぞれ入力、及び出力信号端子4.5と電気的に接
続され、該入力、及び出力信号端子4.5に近接して設
置されている。
In both figures, 1 to 6 indicate the same as the conventional example, and 40
is an auxiliary input signal terminal, 50 is an auxiliary output signal terminal,
Both terminals 40.50 are electrically connected to the input and output signal terminals 4.5, respectively, via the DC blocking capacitor 3a, and are installed close to the input and output signal terminals 4.5.

このような構成になるMM I C増幅器では、MMI
C増幅器チップを縦続接続する場合、そのチップ間の信
号端子接続を補助入力信号端子40と出力信号端子5、
又は補助出力信号端子50と入力信号端子4とで行なう
ことにより、チップ間の直流バイアス分離を行なうこと
ができる。したがって、従来のMM I C増幅器の縦
続接続では必要であった外付けの直流阻止用コンデンサ
が不要となり、容易に縦続接続することができる。
In the MMI C amplifier with such a configuration, the MMI
When C amplifier chips are connected in series, the signal terminal connections between the chips are connected to the auxiliary input signal terminal 40, the output signal terminal 5,
Alternatively, by using the auxiliary output signal terminal 50 and the input signal terminal 4, DC bias separation between chips can be achieved. Therefore, there is no need for an external DC blocking capacitor, which was necessary in the conventional cascade connection of MMIC amplifiers, and the cascade connection can be easily performed.

なお、上記実施例ではMMIC増幅器について説明した
が、これに限定するものではなく、他の高周波集積回路
に適用しても同様の効果を奏することは言うまでもない
Although the above embodiment has been described with reference to an MMIC amplifier, the invention is not limited to this, and it goes without saying that similar effects can be achieved even when applied to other high frequency integrated circuits.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明の高周波集積回路によれば、入
力、及び出力信号端子にそれぞれ直流阻止用コンデンサ
を介して接続された補助入力、及び補助出力信号端子を
設けたので、回路の多段の縦続接続を容易に行なうこと
ができる効果がある。
As described above, according to the high frequency integrated circuit of the present invention, since the auxiliary input and auxiliary output signal terminals are connected to the input and output signal terminals via DC blocking capacitors, respectively, the multistage circuit of the circuit is This has the effect of making cascade connections easier.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例による高周波集積回路を示
す回路図、第2図は上記実施例のチップパターンを示す
概略図、第3図は上記実施例を縦続接続した状態を示す
概略図、第4図は従来の高周波集積回路を示す回路図、
第5図は上記従来例のチップパターンを示す概略図、第
6図は上記従来例をパフケージに組み入れた状態を示す
図、第7図は上記実施例を縦続接続した状態を示す概略
図である。 図において、■はトランジスタ、2は抵抗、3゜3aは
直流阻止用コンデンサ、4は入力信号端子、5は出力信
号端子、6は直流バイアス印加端子、7はパッケージ、
31は外付けの直流阻止用コンデンサ、40は補助入力
信号端子、50は補助出力信号端子、41はパッケージ
の入力リード部、51はパッケージの出力リード部、6
1はパッケージのバイアス用リード部である。 なお図中同一符号は同−又は相当部分を示す。
FIG. 1 is a circuit diagram showing a high frequency integrated circuit according to an embodiment of the present invention, FIG. 2 is a schematic diagram showing a chip pattern of the above embodiment, and FIG. 3 is a schematic diagram showing the state in which the above embodiments are connected in cascade. , FIG. 4 is a circuit diagram showing a conventional high-frequency integrated circuit,
FIG. 5 is a schematic diagram showing the chip pattern of the above conventional example, FIG. 6 is a diagram showing the state in which the above conventional example is incorporated into a puff cage, and FIG. 7 is a schematic diagram showing the state in which the above embodiments are connected in cascade. . In the figure, ■ is a transistor, 2 is a resistor, 3°3a is a DC blocking capacitor, 4 is an input signal terminal, 5 is an output signal terminal, 6 is a DC bias application terminal, 7 is a package,
31 is an external DC blocking capacitor, 40 is an auxiliary input signal terminal, 50 is an auxiliary output signal terminal, 41 is an input lead portion of the package, 51 is an output lead portion of the package, 6
1 is a bias lead portion of the package. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] (1)高周波集積回路において、 入力、及び出力信号端子にそれぞれ直流阻止用コンデン
サを介して接続した補助入力、及び補助出力信号端子を
備え、該補助入力又は補助出力信号端子を、縦続接続す
る回路の出力又は入力信号端子に接続するようにしたこ
とを特徴とする高周波集積回路。
(1) In a high frequency integrated circuit, a circuit comprising an auxiliary input and an auxiliary output signal terminal connected to the input and output signal terminals via a DC blocking capacitor, respectively, and connecting the auxiliary input or auxiliary output signal terminals in cascade. A high-frequency integrated circuit characterized in that it is connected to an output or input signal terminal of the circuit.
JP22676586A 1986-09-25 1986-09-25 High-frequency integrated circuit Pending JPS6381841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22676586A JPS6381841A (en) 1986-09-25 1986-09-25 High-frequency integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22676586A JPS6381841A (en) 1986-09-25 1986-09-25 High-frequency integrated circuit

Publications (1)

Publication Number Publication Date
JPS6381841A true JPS6381841A (en) 1988-04-12

Family

ID=16850264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22676586A Pending JPS6381841A (en) 1986-09-25 1986-09-25 High-frequency integrated circuit

Country Status (1)

Country Link
JP (1) JPS6381841A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003043087A1 (en) * 2001-11-13 2003-05-22 Niigata Seimitsu Co., Ltd. Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003043087A1 (en) * 2001-11-13 2003-05-22 Niigata Seimitsu Co., Ltd. Semiconductor device

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