JPS6374992A - 化合物半導体の結晶成長方法 - Google Patents
化合物半導体の結晶成長方法Info
- Publication number
- JPS6374992A JPS6374992A JP21782186A JP21782186A JPS6374992A JP S6374992 A JPS6374992 A JP S6374992A JP 21782186 A JP21782186 A JP 21782186A JP 21782186 A JP21782186 A JP 21782186A JP S6374992 A JPS6374992 A JP S6374992A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- compound semiconductor
- group
- temperature
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 40
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 150000001875 compounds Chemical class 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 44
- 238000010438 heat treatment Methods 0.000 claims description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 22
- 238000002109 crystal growth method Methods 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 229910021478 group 5 element Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 24
- 238000004140 cleaning Methods 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000255925 Diptera Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- -1 trichlene Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21782186A JPS6374992A (ja) | 1986-09-16 | 1986-09-16 | 化合物半導体の結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21782186A JPS6374992A (ja) | 1986-09-16 | 1986-09-16 | 化合物半導体の結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6374992A true JPS6374992A (ja) | 1988-04-05 |
| JPH0355437B2 JPH0355437B2 (enExample) | 1991-08-23 |
Family
ID=16710271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21782186A Granted JPS6374992A (ja) | 1986-09-16 | 1986-09-16 | 化合物半導体の結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6374992A (enExample) |
-
1986
- 1986-09-16 JP JP21782186A patent/JPS6374992A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0355437B2 (enExample) | 1991-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3776374B2 (ja) | SiC単結晶の製造方法,並びにエピタキシャル膜付きSiCウエハの製造方法 | |
| JP4301592B2 (ja) | 窒化物半導体層付き基板の製造方法 | |
| JP2002050585A (ja) | 半導体の結晶成長方法 | |
| JP3508356B2 (ja) | 半導体結晶成長方法及び半導体薄膜 | |
| EP0226931B1 (en) | A method of preparing semiconductor substrates | |
| JPH0787187B2 (ja) | GaAs化合物半導体基板の製造方法 | |
| JPH0891993A (ja) | シリコン単結晶基板の製造方法および品質管理方法 | |
| KR100774070B1 (ko) | 실리콘 에피텍셜 웨이퍼의 제조방법 | |
| JPS6374992A (ja) | 化合物半導体の結晶成長方法 | |
| JPH0342818A (ja) | 化合物半導体装置とその製造方法 | |
| JP3823177B2 (ja) | 立方晶炭化珪素単結晶薄膜の作製方法 | |
| JPH0412092A (ja) | 化合物半導体及びその成長方法 | |
| Sochinskii et al. | VPE of the Hg1− xCdx Te ohmic contact layers on p‐CdTe | |
| JPS6012775B2 (ja) | 異質基板上への単結晶半導体層形成方法 | |
| JP3238957B2 (ja) | シリコンウェーハ | |
| JPH06140326A (ja) | 化合物半導体基板の製造方法 | |
| JPH0779087B2 (ja) | GaAs(111)A面基板の表面処理方法 | |
| JPH05275328A (ja) | 半導体基板の形成方法 | |
| JPH04182386A (ja) | エピタキシャル成長基板サセプタ | |
| JP2637950B2 (ja) | 表面清浄化方法 | |
| JP2811535B2 (ja) | Iii−v族化合物薄膜の製造方法 | |
| JP3220961B2 (ja) | エピタキシャル半導体ウエーハの製造方法 | |
| JPH0536605A (ja) | 化合物半導体基板の製造方法 | |
| JPH01107515A (ja) | 半導体素子の製造方法 | |
| JP3167350B2 (ja) | 素子の製造法 |