JPS6366430B2 - - Google Patents

Info

Publication number
JPS6366430B2
JPS6366430B2 JP56089818A JP8981881A JPS6366430B2 JP S6366430 B2 JPS6366430 B2 JP S6366430B2 JP 56089818 A JP56089818 A JP 56089818A JP 8981881 A JP8981881 A JP 8981881A JP S6366430 B2 JPS6366430 B2 JP S6366430B2
Authority
JP
Japan
Prior art keywords
base
region
semiconductor layer
impurity density
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56089818A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5743475A (en
Inventor
Junichi Nishizawa
Kentaro Nakamura
Takashi Kiregawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56089818A priority Critical patent/JPS5743475A/ja
Publication of JPS5743475A publication Critical patent/JPS5743475A/ja
Publication of JPS6366430B2 publication Critical patent/JPS6366430B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56089818A 1981-06-11 1981-06-11 Semiconductor device Granted JPS5743475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56089818A JPS5743475A (en) 1981-06-11 1981-06-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56089818A JPS5743475A (en) 1981-06-11 1981-06-11 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12699375A Division JPS53124086A (en) 1975-10-21 1975-10-21 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63057379A Division JPS63283062A (ja) 1988-03-12 1988-03-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5743475A JPS5743475A (en) 1982-03-11
JPS6366430B2 true JPS6366430B2 (cs) 1988-12-20

Family

ID=13981322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56089818A Granted JPS5743475A (en) 1981-06-11 1981-06-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5743475A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012388A (ja) * 1983-06-30 1985-01-22 Ishikawajima Harima Heavy Ind Co Ltd 船首部バルバスバウの建造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026480A (cs) * 1973-07-09 1975-03-19
JPS525273A (en) * 1975-07-02 1977-01-14 Hitachi Ltd Transistor
JPS5222885A (en) * 1975-08-14 1977-02-21 Matsushita Electronics Corp Transistor and manufacturing system

Also Published As

Publication number Publication date
JPS5743475A (en) 1982-03-11

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