JPS6365665A - Static electricity protective device of complementary mis integrated circuit - Google Patents
Static electricity protective device of complementary mis integrated circuitInfo
- Publication number
- JPS6365665A JPS6365665A JP61210228A JP21022886A JPS6365665A JP S6365665 A JPS6365665 A JP S6365665A JP 61210228 A JP61210228 A JP 61210228A JP 21022886 A JP21022886 A JP 21022886A JP S6365665 A JPS6365665 A JP S6365665A
- Authority
- JP
- Japan
- Prior art keywords
- high concentration
- concentration layer
- well
- type high
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title claims description 8
- 230000001681 protective effect Effects 0.000 title abstract 8
- 230000005611 electricity Effects 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、相補型ＭＩＳ集積回路の静電気保護装置に関
し、特に、相補型ＭＩＳ集積回路の静電気保護装置の保
護ダイオードの構成に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrostatic protection device for a complementary MIS integrated circuit, and particularly to a structure of a protection diode of an electrostatic protection device for a complementary MIS integrated circuit.
従来、この種の保護ダイオードは、第３図の如く、第一
導電型半導体基板１内に形成された第二導電型高濃度層
６と、前記基板との間のＰＮ接合ダイオードと、前記基
板内に設けられた第二導電型ウェル２と、前記ウェルの
中に形成された第一導電型高濃度層７とにより成るＰＮ
接合ダイオードの２種類のダイオードにより構成されて
いた。Conventionally, this type of protection diode includes a PN junction diode between a second conductivity type high concentration layer 6 formed in a first conductivity type semiconductor substrate 1 and the substrate, as shown in FIG. A PN consisting of a second conductivity type well 2 provided in the well and a first conductivity type high concentration layer 7 formed in the well.
It was composed of two types of diodes: a junction diode.
第２図は静電気保護装置の回路図であるが、第２図回路
図中の高電位側ダイオードは、Ｎウェル２とＮウェル中
Ｐ型高濃度層７で構成され、低電位側ダイオードは、Ｐ
型基板１と基板側Ｎ型高濃度Ｎ６とで構成されており、
２つの異なる種類のＰＮ接合によるダイオードが用いら
れている。FIG. 2 is a circuit diagram of an electrostatic protection device. The high potential side diode in the circuit diagram of FIG. 2 is composed of an N well 2 and a P-type high concentration layer 7 in the N well, and the low potential side diode is P
It is composed of a mold substrate 1 and N-type high concentration N6 on the substrate side,
Two different types of PN junction diodes are used.
上述した従来の保護ダイオードでは、２種類のＰＮ接合
、すなわち、第一導電型基板と第二導電型高濃度層での
接合、及び、第二導電型ウェルと第一導電型高濃度層で
の接合を用いておりおのおの接合耐圧、順方向特性、直
列抵抗が異なっており、保護素子の設計に対するパラメ
ータが多くなり、なおかつ、静電気の放電経路により、
ダイオードの種類、方向が異なり信頼度のある設計が困
難であった。In the conventional protection diode described above, there are two types of PN junctions: a junction between the first conductivity type substrate and the second conductivity type high concentration layer, and a junction between the second conductivity type well and the first conductivity type high concentration layer. Since junctions are used, each junction has different breakdown voltage, forward characteristics, and series resistance, and there are many parameters for designing the protection element.
The diode types and directions were different, making it difficult to design with reliability.
本発明の目的は、従来の欠点を除去し、保護ダイオード
に適用するＰＮ接合を一種類にすることにより設計精度
を大幅に向上させ、ひいては、保護能力の高い相補型Ｍ
ＩＳ集積回路の静電気保護装置を提供することにある。The purpose of the present invention is to eliminate the drawbacks of the conventional technology, to greatly improve design accuracy by using only one type of PN junction for protection diodes, and to create a complementary type M with high protection ability.
An object of the present invention is to provide an electrostatic protection device for IS integrated circuits.
本発明の相補型ＭＩＳ集積回路の静電気保護装置は、第
一導電型基板に形成された第二導電型ウェルと、そのウ
ェルの中に形成された第一導電型高濃度層により形成さ
れた一種類のＰＮ接合ダイオードのみにより静電気保護
用ダイオードが構成されていることを特徴とする。The electrostatic protection device for a complementary MIS integrated circuit of the present invention includes a second conductivity type well formed in a first conductivity type substrate and a first conductivity type high concentration layer formed in the well. The electrostatic protection diode is comprised of only different types of PN junction diodes.
また、これに使用されるＰＮ接合ダイオードの接ぎ耐圧
は第二導電型ウェル中の第二導電型高濃度層と前記ウェ
ルの中に形成された第一導電型高濃度層との間隔の調整
により高精度に決定することができる。In addition, the junction breakdown voltage of the PN junction diode used in this is determined by adjusting the distance between the second conductivity type high concentration layer in the second conductivity type well and the first conductivity type high concentration layer formed in the well. It can be determined with high precision.
次に、本発明の実施例について、図面を参照して説明す
る。第１図は本発明の一実施例を示すダイオード部の断
面図である。Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of a diode section showing an embodiment of the present invention.
本実施例ではＰ型基板の場合で、Ｐ型基板１の中にＮ型
ウェル２が形成されている。Ｐ壁高濃度層７とＮ型ウェ
ル２との間のＰＮ接合を保護ダイオードとして使用して
おり、第２図に示す保護回路を参照しながら説明すると
、端子から保護抵抗１０を通った接点１１より高電位側
電源Ｖ０１）への保護ダイオード８の陽極は、Ｎウェル
中のＰ壁高濃度層７であり、陰極は電極ＶＤＤがら、Ｎ
型高濃度層６を介して、Ｎウェル２に接続されている。In this embodiment, a P-type substrate is used, and an N-type well 2 is formed in a P-type substrate 1. The PN junction between the P-wall high concentration layer 7 and the N-type well 2 is used as a protection diode, and as explained with reference to the protection circuit shown in FIG. The anode of the protection diode 8 connected to the higher potential side power supply V01) is the P wall high concentration layer 7 in the N well, and the cathode is the N well from the electrode VDD.
It is connected to the N well 2 via the high concentration layer 6 .
一方接点１１より低電位側（本実施例では接地電極）へ
の保護ダイオード９の陽極は、Ｎウェル中のＰ壁高濃度
層７を介して、接地電極へ接続され、陰極はＮウェル２
であり、Ｎ型高濃度層６を介して、接点１１へ接続され
ている。以上の構成により、保護ダイオードとしてのＰ
−Ｎ接合は、一種類のみで、実現でき、また、上述のＰ
壁高濃度層７と、Ｎ型高濃度層６との間隔を適宜定める
ことにより、リーチスルーダイオードとして、耐圧を設
計することもできる。On the other hand, the anode of the protection diode 9, which is connected to the lower potential side (the ground electrode in this embodiment) than the contact 11, is connected to the ground electrode via the P-wall high concentration layer 7 in the N-well, and the cathode is connected to the N-well 2.
and is connected to the contact 11 via the N-type high concentration layer 6. With the above configuration, P as a protection diode
-N junction can be realized with only one type, and the above-mentioned P
By appropriately determining the distance between the wall high concentration layer 7 and the N-type high concentration layer 6, it is possible to design a reach-through diode with a withstand voltage.
ｒ発明の効果〕
以上説明したように、本発明は、保護ダイオードに適用
するＰＮ接合を、一種類にすることにより、設計精度を
大幅に向上させ、ひいては、保護能力の高い保護装置を
提供できる効果がある。[Effects of the Invention] As explained above, the present invention greatly improves design accuracy by using only one type of PN junction for the protection diode, and can further provide a protection device with high protection ability. effective.
第１図は本発明の一実施例の保護ダイオードの断面図、
第２図は静電気保護装置の回路図、第３図は、従来の相
補型ＭＩＳ集積回路の静電気保護装置の一例の断面図で
ある。
１・・・Ｐ型基板、２・・・Ｎ型ウェル、３・−・酸化
膜、４・・・層間絶縁膜、５・・・アルミニウム、６・
・・Ｎ型高濃度層、７・・・Ｐ壁高濃度層、８・・・高
電位側保護ダイオード、９・・・低電位側保護ダイオー
ド、１ｏ・・・保護抵抗、１１・・・接点。FIG. 1 is a cross-sectional view of a protection diode according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of an electrostatic protection device, and FIG. 3 is a sectional view of an example of a conventional electrostatic protection device for a complementary MIS integrated circuit. DESCRIPTION OF SYMBOLS 1... P-type substrate, 2... N-type well, 3... Oxide film, 4... Interlayer insulating film, 5... Aluminum, 6...
...N-type high concentration layer, 7...P wall high concentration layer, 8...High potential side protection diode, 9...Low potential side protection diode, 1o...Protection resistor, 11... Contact .
Claims (2)
、該ウェルの中に形成された第一導電型高濃度層により
形成された一種類のＰＮ接合ダイオードのみにより静電
気保護用ダイオードが構成されていることを特徴とする
相補型ＭＩＳ集積回路の静電気保護装置。(1) An electrostatic protection diode using only one type of PN junction diode formed by a second conductivity type well formed on a first conductivity type substrate and a first conductivity type high concentration layer formed in the well. An electrostatic protection device for a complementary MIS integrated circuit, characterized by comprising:
ウェルの中に形成された第一導電型高濃度層との間隔に
て接合耐圧が設計されていることを特徴とする特許請求
の範囲第（１）項記載の相補型ＭＩＳ集積回路の静電気
保護装置。(2) A junction breakdown voltage is designed based on the distance between the second conductivity type high concentration layer in the second conductivity type well and the first conductivity type high concentration layer formed in the well. An electrostatic protection device for a complementary MIS integrated circuit according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61210228A JPH0795565B2 (en) | 1986-09-05 | 1986-09-05 | Static electricity protection device for complementary MIS integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61210228A JPH0795565B2 (en) | 1986-09-05 | 1986-09-05 | Static electricity protection device for complementary MIS integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6365665A true JPS6365665A (en) | 1988-03-24 |
| JPH0795565B2 JPH0795565B2 (en) | 1995-10-11 |
Family
ID=16585905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61210228A Expired - Lifetime JPH0795565B2 (en) | 1986-09-05 | 1986-09-05 | Static electricity protection device for complementary MIS integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0795565B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03196565A (en) * | 1989-12-26 | 1991-08-28 | Toshiba Micro Electron Kk | Input/output protecting device |
| US5208474A (en) * | 1990-02-07 | 1993-05-04 | Mitsubishi Denki Kabushiki Denki | Input circuit of a semiconductor device |
| US8607762B2 (en) | 2009-03-25 | 2013-12-17 | Lumenium Llc | Inverse displacement asymmetric rotary (IDAR) engine |
| US8714135B2 (en) | 2012-03-14 | 2014-05-06 | Lumenium Llc | IDAR-ACE inverse displacement asymmetric rotating alternative core engine |
| US9309765B2 (en) | 2012-03-14 | 2016-04-12 | Lumenium Llc | Rotary machine |
| US10184392B2 (en) | 2012-03-14 | 2019-01-22 | Lumenium Llc | Single chamber multiple independent contour rotary machine |
| US11168608B2 (en) | 2015-04-13 | 2021-11-09 | Lumenium Llc | Single chamber multiple independent contour rotary machine |
| US11725515B2 (en) | 2018-11-27 | 2023-08-15 | Lumenium Llc | Rotary engine with recirculating arc roller power transfer |
| US11920476B2 (en) | 2015-04-13 | 2024-03-05 | Lumenium Llc | Rotary machine |
| US11927128B2 (en) | 2020-05-15 | 2024-03-12 | Lumenium Llc | Rotary machine with hub driven transmission articulating a four bar linkage |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57147278A (en) * | 1981-03-05 | 1982-09-11 | Fujitsu Ltd | Protecting device for mis integrated circuit |
| JPS5821374A (en) * | 1981-07-29 | 1983-02-08 | Toshiba Corp | Semiconductor device |
-
1986
- 1986-09-05 JP JP61210228A patent/JPH0795565B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57147278A (en) * | 1981-03-05 | 1982-09-11 | Fujitsu Ltd | Protecting device for mis integrated circuit |
| JPS5821374A (en) * | 1981-07-29 | 1983-02-08 | Toshiba Corp | Semiconductor device |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03196565A (en) * | 1989-12-26 | 1991-08-28 | Toshiba Micro Electron Kk | Input/output protecting device |
| JPH088308B2 (en) * | 1989-12-26 | 1996-01-29 | 東芝マイクロエレクトロニクス株式会社 | I / O protection device |
| US5208474A (en) * | 1990-02-07 | 1993-05-04 | Mitsubishi Denki Kabushiki Denki | Input circuit of a semiconductor device |
| US9714605B2 (en) | 2009-03-25 | 2017-07-25 | Lumenium Llc | Rotary machine |
| US8607762B2 (en) | 2009-03-25 | 2013-12-17 | Lumenium Llc | Inverse displacement asymmetric rotary (IDAR) engine |
| US8714135B2 (en) | 2012-03-14 | 2014-05-06 | Lumenium Llc | IDAR-ACE inverse displacement asymmetric rotating alternative core engine |
| US9309765B2 (en) | 2012-03-14 | 2016-04-12 | Lumenium Llc | Rotary machine |
| US9822642B2 (en) | 2012-03-14 | 2017-11-21 | Lumenium Llc | Rotary machine |
| US10184392B2 (en) | 2012-03-14 | 2019-01-22 | Lumenium Llc | Single chamber multiple independent contour rotary machine |
| US11168608B2 (en) | 2015-04-13 | 2021-11-09 | Lumenium Llc | Single chamber multiple independent contour rotary machine |
| US11920476B2 (en) | 2015-04-13 | 2024-03-05 | Lumenium Llc | Rotary machine |
| US11725515B2 (en) | 2018-11-27 | 2023-08-15 | Lumenium Llc | Rotary engine with recirculating arc roller power transfer |
| US11927128B2 (en) | 2020-05-15 | 2024-03-12 | Lumenium Llc | Rotary machine with hub driven transmission articulating a four bar linkage |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0795565B2 (en) | 1995-10-11 |
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