JP3074736B2 - Semiconductor device - Google Patents

Semiconductor device

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JP3074736B2
JP3074736B2 JP02408533A JP40853390A JP3074736B2 JP 3074736 B2 JP3074736 B2 JP 3074736B2 JP 02408533 A JP02408533 A JP 02408533A JP 40853390 A JP40853390 A JP 40853390A JP 3074736 B2 JP3074736 B2 JP 3074736B2
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diode
transistor
constant voltage
collector
end
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JPH04233232A (en
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寿夫 重兼
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富士電機株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12032Schottky diode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]

Abstract

A semiconductor device, comprising a transistor, a constant voltage diode having a first end of a first conductivity type connected to an emitter of the transistor and a second end of a second conductivity type, a reverse current preventive diode having a first end of the first conductivity type connected to a collector of the transistor and a second end of the second conductivity type connected to the second end of the constant voltage diode, and a high speed diode reverse-bias connected between the transistor collector and the emitter of the transistor. <IMAGE>

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、高速スイッチング電力用半導体素子として用いられるパワートランジスタあるいは絶縁ゲート型バイポーラトランジスタ(IGBT) The present invention relates to a power transistor or an insulated gate bipolar transistor is used as a semiconductor element for high-speed switching power (IGBT)
のようなトランジスタに別の機能を付設した半導体装置に関する。 A transistor, such as a semiconductor device was attached another function.

【0002】 [0002]

【従来の技術】パワートランジスタやIGBTのようなトランジスタを用いて回路を構成する場合、エミッタ・ When configuring a circuit using a transistor such as the Related Art Power transistors and IGBT, the emitter and
コレクタ間をバイパスするダイオードを接続することはよく知られている。 Connecting the diode to bypass the collector is well known. 例えば図2に示すモータ21の速度を順変換器22とトランジスタインバータ23を用いて制御するような誘導性負荷回路において、図3に示すようにトランジスタ1にフリーホイリングダイオード(F The speed of the motor 21 shown in FIG. 2 in the inductive load circuit, such as controlled using the forward converter 22 and transistor inverters 23 For example, the free wheeling diode transistor 1 as shown in FIG. 3 (F
WD)として高速ダイオード2が接続され、エミッタ1 WD) Fast diode 2 is connected as an emitter 1
1からコレクタ12に至る電流の径路を形成している。 Forming a path of current ranging from 1 to the collector 12.

【0003】一方、コレクタ側に発生する各種サージ電圧からトランジスタ1を保護するためには、FWDは図4の等価回路で示されるように、ツエナダイオードあるいはアバランシェダイオードのような定電圧ダイオード3の機能を有することが求められる。 [0003] On the other hand, in order to protect the transistor 1 from various surge voltage generated at the collector side, FWD, as shown in the equivalent circuit of FIG. 4, the function of the constant voltage diode 3, such as a Zener diode or avalanche diode to have is required.

【0004】 [0004]

【発明が解決しようとする課題】定電圧ダイオード3として用いられるツエナダイオードとしては、図5に示すような断面構造をもつリーチスルー型ツエナダイオードが知られている。 The Zener diode used as a constant voltage diode 3 [0005], the reach-through type zener diode having a sectional structure as shown in FIG. 5 has been known. すなわち、N +層32上に積層されたN -層31にP +層33を形成し、P +層33に酸化膜34の開口部で接触するアノード電極35、N +層32 That, N + layer 32 is laminated on N - forming a P + layer 33 to layer 31, anode electrode 35 in contact with the opening of the oxide film 34 on the P + layer 33, N + layer 32
に接触するカソード電極36を備えたものである。 Those having a cathode electrode 36 in contact with. このツエナダイオードのツエナ電圧はN -層31の比抵抗と幅Wiで決まる。 Zener voltage of the Zener diode is N - determined by the resistivity and the width Wi of the layer 31. しかし、このようなツエナダイオードは、trrが長いため、図3に示す高速ダイオード2としては役立たない。 However, such a Zener diode, since trr is long, do not lend themselves as high speed diode 2 shown in FIG. trrを短くするためにライフタイムキラーを用いてN -層31のライフタイムを制御しようとするとツエナ電圧が安定化しない。 with lifetime killer to shorten trr N - when you try to control the lifetime of layer 31 Zener voltage is not stabilized.

【0005】本発明の目的は、このような問題を解決し、トランジスタに、高速でスイッチングできるエミッタ・コレクタ間バイパス機能とコレクタに加わる異常電圧に対する保護機能の双方を付設した半導体装置を提供することにある。 An object of the present invention, to solve such a problem, a transistor, to provide a semiconductor device attached to both the protection against abnormal voltage applied to the emitter-collector bypass feature and the collector that can be switched at high speed It is in.

【0006】 [0006]

【課題を解決するための手段】上記の目的を達成するために、本発明の半導体装置は、 逆流防止ダイオードが逆 To achieve the above object, according to the Invention The semiconductor device of the present invention, the backflow prevention diode reverse
直列接続された定電圧ダイオードと高速ダイオードと A constant voltage diode and a high speed diodes connected in series
が、トランジスタのコレクタ・エミッタ間に、該トラン There, between the collector and the emitter of the transistor, the Trang
ジスタのベース・エミッタ接合に対してそれぞれ逆並列 Antiparallel, respectively to the base-emitter junction of the register
接続された半導体装置であって、前記トランジスタが半 A connected semiconductor device, the transistor is half
導体素体の低不純物濃度の第一導電型の第一層、その第 First layer of a first conductivity type having a low impurity concentration of the conductive body, the first
一層の一面側の表面層内に選択的に形成された第二導電 Second conductive selectively formed on the layer of one side of the surface layer
型の第二層およびその第二層の表面層内に選択的に形成 Selectively formed in the second layer and the second layer surface layer of the mold
された第一導電型の第三層および第一層の他面側の高不 High non of been first conductivity type third layer and the other surface side of the first layer of
純物濃度の第一導電型の第四層からなり、前記高速ダイ Made from the fourth layer of the first conductivity type of a pure object density, the high-speed die
オードが第一層の中のライフタイム制御された領域およ Ord is lifetime control in the first layer region Oyo
びその領域上の一面側に形成された第二導電型の第五層 Beauty fifth layer of the second conductivity type formed on one side on that region
と他面側に形成された第四層からなり、前記定電圧ダイ And made from the fourth layer formed on the other surface, the constant voltage die
オードが第一層およびその一面側の表面層内に選択的に Ord selectively to the first layer and one surface of the surface layer in that
形成された第二導電型の第六層からなり、前記逆流防止 Made from a second conductivity type sixth layer of which is formed, the backflow prevention
ダイオードが第一層およびその他面側に接触するショッ Shock diode contacts the first layer and the other surface side
トキーバリア金属層よりなることが有効である。 It is effective consisting Tokibaria metal layer.

【0007】 [0007]

【作用】トランジスタに逆並列接続されるFWDの高速ダイオードと定電圧ダイオードを別個に並列接続することにより、FWDの高速スイッチング特性と定電圧ダイオードの安定した定電圧特性を両立させることができる。 By separately connected in parallel fast diode and a constant voltage diode FWD connected antiparallel to the action transistor, it is possible to achieve both stable constant voltage characteristics of high-speed switching characteristic and a constant voltage diode FWD. そして定電圧ダイオードに逆直列接続される逆流防止ダイオードは、定電圧ダイオードに逆電圧は印加されるようにするが順電流が流れるのを防止する。 The backflow prevention diode is reverse connected in series to the constant voltage diode, the reverse voltage to the constant voltage diode is to be applied to prevent the flow of forward current. さらに1 In addition 1
チップ化することで回路構成が簡素化できる。 Circuit configured by chips can be simplified.

【0008】 [0008]

【実施例】図1は本発明の実施例の等価回路を示し、図3,図4と共通の部分には同一の符号が付されている。 DETAILED DESCRIPTION FIG. 1 shows an equivalent circuit of the embodiment of the present invention, FIG. 3, are denoted by the same reference numerals are common to those in FIG. 4.
この回路ではトランジスタ1のエミッタ11とコレクタ12の間に高速ダイオード2と別に定電圧ダイオード3 Fast diode 2 Separately constant voltage diode 3 between the emitter 11 and the collector 12 in this circuit the transistors 1
が逆直列接続の逆流防止ダイオード4と共に逆並列接続されている。 There has been connected in reverse parallel with blocking diode 4 of the anti-series connection. 図6はこの回路を実現したモジュールである。 6 is a module that realizes this circuit. 図において51はトランジスタ、52は高速ダイオードの個別チップであり、53は定電圧ダイオードと逆流防止ダイオードとの逆直列接続を一体化した部材である。 51 In FIG transistors, 52 is a high-speed diode individual chips, 53 is a member obtained by integrating the inverse series connection of a constant voltage diode and blocking diode. 高速ダイオード52と一体化部材53の下部端子はトランジスタ51のコレクタの接続されるコレクタ電極板54に固着され、上部端子はトランジスタ51のエミッタと共に導線55でエミッタ電極板56に接続されている。 Lower terminals of the high speed diodes 52 and integrated member 53 is secured to the collector electrode plate 54 connected to the collector of the transistor 51, the upper terminal is connected to the emitter electrode plate 56 in lead 55 with the emitter of the transistor 51. そしてコレクタ電極板54とエミッタ電極板56 The collector electrode plate 54 and the emitter electrode plate 56
は下面に冷却板58が取付けられる絶縁板57に固着されている。 Is fixed to the insulating plate 57 of the cooling plate 58 is attached to the lower surface.

【0009】図7,図8,図9は定電圧ダイオード3と逆流防止ダイオード4の逆直列接続部材53の実施例を示す。 [0009] Figure 7, 8 and 9 show an embodiment of the anti-series connection member 53 of the constant voltage diode 3 and the backflow preventing diode 4. 図7においてはN層31とP層33からなるツエナダイオードチップ59とN層61,P層62からなるダイオードチップ60がはんだ63によって順方向が逆向きになるようにろう付けされている。 Diode chip 60 consisting of Zener diode chip 59 and the N layer 61, P-layer 62 made of N layer 31 and the P layer 33 is brazed to the forward becomes reversed by the solder 63 in FIG. なお、ダイオードチップ60も逆回復時間の短いファストリカバリーダイオード(FRD)として形成されることが望ましい。 The diode chip 60 also is preferably formed as a reverse recovery time of the short fast recovery diodes (FRD).

【0010】図8に示す実施例においては、図1の定電圧ダイオード3と逆流防止ダイオード4が1チップに集積されている。 [0010] In the embodiment shown in FIG. 8, the constant voltage diode 3 and the backflow preventing diode 4 Figure 1 are integrated into one chip. 図(a)に示すように定電圧ダイオードは、N -層31と選択拡散によるP +層33との間のP Figure constant voltage diode, as shown in (a), N - P between the P + layer 33 by selective diffusion and the layer 31
N接合によって形成され、逆流防止ダイオードはN -層31とその上に接触するCrあるいはAlなどの金属層37とからなるショットキーバリアによって形成されている。 Formed by N junction, blocking diode is N - is formed by a Schottky barrier comprising a layer 31 and metal layer 37. such as Cr or Al in contact thereon. 逆流防止ダイオード4の耐圧は定電圧ダイオード3の順方向電圧降下分だけあればよいから、ショットキーバリアダイオードの耐圧で十分である。 Breakdown voltage of the blocking diode 4 because it needs only a forward voltage drop of the constant voltage diode 3, is sufficient withstand voltage of the Schottky barrier diode. このチップの等価回路は図(b)の通りで、P +層33に酸化膜34 Equivalent circuit of the chip is as FIG. (B), the oxide film 34 on the P + layer 33
の開口部で接触するアノード電極35によって図1におけるトランジスタ1のエミッタ11と、ショットキーバリア電極37によってトランジスタ1のコレクタ12と接続される。 By the anode electrode 35 in contact with the opening and the emitter 11 of the transistor 1 in FIG. 1, the Schottky barrier electrode 37 is connected to the collector 12 of the transistor 1.

【0011】図9に示す実施例では、図8と同様にPN [0011] In the embodiment shown in FIG. 9, as in FIG. 8 PN
接合を有する定電圧ダイオードとショットキー接合を有する逆流防止ダイオードが1チップに複合されているが、図(a)に示すようにP -層38を基材にしているため、順方向が逆になる。 While blocking diode having a constant voltage diode and a Schottky junction having a junction is combined on a single chip, P as shown in FIG. (A) - Due to the the base material layer 38, the forward direction to the reverse Become. すなわち、等価回路は図(b)のようになり、N +層32に接触するカソード電極36が図1におけるトランジスタ1のコレクタ12 That is, the equivalent circuit is as shown in FIG. (B), the collector of the transistor 1 cathode electrode 36 in FIG. 1 in contact with the N + layer 32 12
に、また半導体から金属に向かって順方向となるショットキーバリアを形成する金属層39がトランジスタ1のエミッタ11に接続される。 In, also the metal layer 39 to form a Schottky barrier in the direction from the semiconductor to the metal is connected to the emitter 11 of the transistor 1. なお、定電圧ダイオード3 The constant voltage diode 3
のツエナ電圧が500V以上を要するときは、この実施例の構造は不適で、図8に示すようにN -層31を基材にすることが望ましい。 When Zener voltage of requiring more than 500V, the structure of this embodiment is not suitable, N as shown in FIG. 8 - it is desirable to base layer 31.

【0012】図10に示す実施例においては、図1におけるトランジスタ1,高速ダイオード(FRD)2,定電圧ダイオード3および逆流防止ダイオード4を1チップに集積したものである。 [0012] In the embodiment shown in FIG. 10, the transistor 1 in FIG. 1, in which high-speed diode (FRD) 2, a constant voltage diode 3 and reverse current prevention diode 4 are integrated on a single chip. 図に示すように、N -シリコン基板40を用い、酸化膜マスクを用いた1回の選択拡散によりP +層41,P +層42,P +層43が形成されている。 As shown in FIG, N - using a silicon substrate 40, P + layer 41, P + layer 42, P + layer 43 is formed by a single selective diffusion using an oxide film mask. +層41はトランジスタ1のベース層であり、その中に形成されるN +層44をエミッタ層とし、 P + layer 41 is the base layer of the transistor 1, the N + layer 44 which is formed therein and the emitter layer,
-層40をコレクタとしてトランジスタ1が構成される。 N - transistor 1 is formed a layer 40 as a collector. +層はFRD2のアノード側層であり、それとP P + layer is the anode side layer of FRD2, at the same P
N接合をつくるN -層40の部分には、例えば選択的塗布拡散により金などのライフタイムキラー45が導入され、キャリアの再結合を促進してダイオード2の高速化が図られている。 Making N junction the N - layer portion of 40, for example, it is introduced lifetime killers 45 such as gold by selective application diffusion, promoting a diode faster 2 recombination of carriers is achieved. +層43の一部には不純物の再拡散により深いP +層33が形成されている。 Some of the P + layer 43 deep P + layer 33 by the re-diffusion of impurity is formed. これによって生ずるP +層33とN -層40との間のPN接合により定電圧ダイオード3が形成され、N -層40とその下面に接触する金属層37により逆流防止ダイオード4となるショットキーダイオードが形成されるので、図8 This caused the P + layer 33 and the N - is a constant voltage diode 3 is formed by the PN junction between the layers 40, N - becomes the layer 40 and the blocking diode 4 by a metal layer 37 in contact with the lower surface Schottky diode because There is formed, FIG. 8
(a)と同様の構成ができ上がる。 (A) the same configuration is completed. この場合、P +層3 In this case, P + layer 3
3はP +層43と同一面積でもよい。 3 may be the same area and the P + layer 43. 金属層37はN + Metal layer 37 is N +
層46を介してトランジスタ部1,高速ダイオード部2 Transistor section 1 via the layer 46, a high speed diode 2
のN -層40にも接触し、トランジスタ1のコレクタ電極、高速ダイオードのカソード電極の役目を兼ねる。 Of N - also in contact with the layer 40, also serves as the collector electrode of the transistor 1, the role of the cathode electrode of the high speed diodes. そのほかP 層41にはトランジスタ1のベース電極4 The base electrode 4 of the other transistor 1 is in the P + layer 41
7、N +層44にはエミッタ電極48、P +層42には高速ダイオード2のアノード電極49、P +層43には定電圧ダイオード3のアノード電極35が接触し、電極48,49,35が相互に接続されることにより図1に示す等価回路が構成される。 7, N + contacts the anode electrode 35 of the constant voltage diode 3 at a high speed diode 2 of the anode electrode 49, P + layer 43 to the emitter electrode 48, P + layer 42 to layer 44, electrodes 48,49,35 There equivalent circuit is constructed as shown in FIG. 1 by being connected to each other. この構造で、P +層33とショットキーバリア電極37の間のN -層40の幅Wi In this structure, between the P + layer 33 and the Schottky barrier electrode 37 N - width of the layer 40 Wi
は、例えば定電圧ダイオード3のツエナ電圧を400V , For example a Zener voltage of the constant voltage diode 3 400V
にするときには35μm程度にされる。 Is about 35μm when to. 一方、P +層4 On the other hand, P + layer 4
1,P +層42の下に残るN -層40の幅は60μm程度である。 1, N remain under the P + layer 42 - the width of the layer 40 is about 60 [mu] m. なお、図10におけるトランジスタ1は通常のバイポーラトランジスタであるが、エミッタ層44の表面部にP +ソース層を形成し表面上にMOS構造を設ければ、IGBTとすることもできる。 The transistors 1 in FIG. 10 is an ordinary bipolar transistor, by providing the MOS structure in a surface portion of the emitter layer 44 to form a P + source layer on the surface may be a IGBT. また、いずれの場合も導電型を逆にすることが可能なことはもちろんである。 Also, it is possible to reverse the even conductivity type each case is a matter of course.

【0013】 [0013]

【発明の効果】本発明によれば、トランジスタのバイパス機能をもつFWDに過電圧保護のための定電圧ダイオードとしての機能を兼ねさせないで、定電圧ダイオードを逆流防止ダイオードと直列に接続して別個にトランジスタに逆並列接続することにより、FWDの高速スイッチング性と定電圧ダイオードの安定した定電圧特性を容易に両立させることができるようになった。 According to the present invention, without serves also as the FWD with bypass function of the transistor functions as a constant voltage diode for over-voltage protection, separately connect a constant voltage diode prevention diode in series with reverse flow by antiparallel connected to the transistor, it has become possible to easily achieve both stable constant voltage characteristics of high-speed switching of a constant voltage diode FWD. そして、少なくとも定電圧ダイオードと逆流防止ダイオードを一体化することにより、特に逆流防止ダイオードをショットキーダイオードとすることにより定電圧ダイオードと1 Then, by integrating at least a constant voltage diode and blocking diode, in particular a constant-voltage diode by the reverse current preventing diode and Schottky diode 1
チップ化することによって回路構成が簡素化できた。 Circuit configured by chips could be simplified. さらに、トランジスタも含めて各素子を1チップに集積することにより、簡素化の効果はより大きくなった。 Furthermore, by integrating, including transistors each element in one chip, the effect of the simplification becomes greater.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の実施例の等価回路図 Equivalent circuit diagram of an embodiment of the invention, FIG

【図2】モータ速度制御回路図 [2] The motor speed control circuit diagram

【図3】図2の回路に用いる半導体装置の等価回路図 [3] equivalent circuit diagram of a semiconductor device used in the circuit of FIG. 2

【図4】図2の回路に用いる別の半導体装置の等価回路図 Figure 4 is an equivalent circuit diagram of another semiconductor device used in the circuit of FIG. 2

【図5】リーチスルー型ツエナダイオードの断面図 Figure 5 is a cross-sectional view of reach-through type Zener diode

【図6】本発明の一実施例のモジュールの正面図 Figure 6 is a front view of the module of one embodiment of the present invention

【図7】本発明の別の実施例に用いる逆直列接続ダイオードの断面図 7 is a cross-sectional view of anti-series connection diodes used in another embodiment of the present invention

【図8】本発明の異なる実施例に用いる逆直列接続ダイオードの(a)断面図および(b)等価回路図 8 (a) is a cross-sectional view and (b) an equivalent circuit diagram of the anti-series connection diodes used in different embodiments of the present invention

【図9】本発明のさらに異なる実施例に用いる逆直列接続ダイオードの(a)断面図および(b)等価回路図 [9] In addition (a) cross-sectional view and (b) an equivalent circuit diagram of the anti-series connection diodes used in different embodiments of the present invention

【図10】図1の等価回路を1チップに構成する本発明の他の実施例の半導体装置の断面図 Figure 10 is a cross-sectional view of a semiconductor device of another embodiment of the present invention that the equivalent circuit of FIG. 1 configured in one chip

【符号の説明】 DESCRIPTION OF SYMBOLS

1 トランジスタ 2 高速ダイオード 3 定電圧ダイオード 4 逆流防止ダイオード 31 N -層 32 N +層 33 P +層 35 アノード電極 36 カソード電極 37 ショットキーバリア電極 38 P -層 39 ショットキーバリア電極 40 N -シリコン基板 41 P +ベース層 42 P +層 43 P +層 44 N +エミッタ層 45 ライフタイムキラー 47 ベース電極 48 エミッタ電極 49 アノード電極 51 トランジスタチップ 52 高速ダイオードチップ 53 逆直列接続ダイオード 54 コレクタ電極板 56 エミッタ電極板 59 ツエナダイオードチップ 60 ダイオードチップ 1 transistor 2 fast diodes third constant voltage diode 4 blocking diode 31 N - layer 32 N + layer 33 P + layer 35 anode electrode 36 cathode electrode 37 Schottky barrier electrode 38 P - layer 39 Schottky barrier electrode 40 N - silicon substrate 41 P + base layer 42 P + layer 43 P + layer 44 N + emitter layer 45 lifetime killer 47 base electrode 48 emitter electrode 49 anode electrode 51 transistor chip 52 fast diode chip 53 anti-series connected diodes 54 collector electrode plate 56 emitter electrode plate 59 Zener diode chip 60 LED chip

フロントページの続き (51)Int.Cl. 7識別記号 FI H01L 29/78 657 H01L 27/06 101D 101P 29/872 (58)調査した分野(Int.Cl. 7 ,DB名) H01L 21/33 - 21/331 H01L 29/68 - 29/737 H01L 21/336 H01L 29/78 H01L 21/8222 - 21/8228 H01L 21/8232 H01L 27/06 - 27/06 101 H01L 27/08 - 27/08 101 H01L 27/082 . Of the front page Continued (51) Int.Cl 7 identification mark FI H01L 29/78 657 H01L 27/06 101D 101P 29/872 (58) investigated the field (Int.Cl. 7, DB name) H01L 21/33 - 21/331 H01L 29/68 - 29/737 H01L 21/336 H01L 29/78 H01L 21/8222 - 21/8228 H01L 21/8232 H01L 27/06 - 27/06 101 H01L 27/08 - 27/08 101 H01L 27/082

Claims (1)

    (57)【特許請求の範囲】 (57) [the claims]
  1. 【請求項1】逆流防止ダイオードが逆直列接続された定 1. A constant backflow prevention diode is reversely connected in series
    電圧ダイオードと高速ダイオードとが、トランジスタの And a voltage diodes and high-speed diode, a transistor
    コレクタ・エミッタ間に、該トランジスタのベース・エ Between the collector and emitter, base-e of the transistor
    ミッタ接合に対してそれぞれ逆並列接続された半導体装 Semiconductor instrumentation that is antiparallel connected respectively emitter junction
    置であって、前記トランジスタが半導体素体の低不純物 A location, low impurity said transistor is a semiconductor body
    濃度の第一導電型の第一層、その第一層の一面側の表面 First layer of a first conductivity type concentration, the surface of one side of the first layer
    層内に選択的に形成された第二導電型の第二層およびそ Second layer and its second conductive type selectively formed in a layer
    の第二層の表面層内に選択的に形成された第一導電型の Of the second layer a first conductivity type selectively formed in the surface layer of
    第三層および第一層の他面側の高不純物濃度の第一導電 First conductive other side high impurity concentration of the third layer and the first layer
    型の第四層からなり、前記高速ダイオードが第一層の中 It consists fourth layer type, in the high-speed diode of the first layer
    のライフタイム制御された領域およびその領域上の一面 One side of the life time control region and the region
    側に形成された第二導電型の第五層と他面側に形成され It is formed on the fifth layer and the other surface side of the second conductivity type formed in the side
    た第四層からなり、前記定電圧ダイオードが第一層およ Were made from the fourth layer, the constant voltage diode Oyo first layer
    びその一面側の表面層内に選択的に形成された第二導電 Beauty second conductive selectively formed in the surface layer of the one side
    型の第六層からなり、前記逆流防止ダイオードが第一層 It consists sixth layer type, the backflow prevention diode first layer
    およびその他面側に接触するショットキーバリア金属層 And the Schottky barrier metal layer in contact with the other surface side
    よりなることを特徴とする半導体装置。 The semiconductor device characterized by comprising more.
JP02408533A 1990-12-28 1990-12-28 Semiconductor device Expired - Lifetime JP3074736B2 (en)

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JP02408533A JP3074736B2 (en) 1990-12-28 1990-12-28 Semiconductor device
US07/783,333 US5349230A (en) 1990-12-28 1991-10-28 Diode circuit for high speed switching transistor
DE69119382T DE69119382T2 (en) 1990-12-28 1991-12-20 A semiconductor device comprising a bipolar high-speed switching transistor
EP91122035A EP0492558B1 (en) 1990-12-28 1991-12-20 Semiconductor device comprising a high speed switching bipolar transistor
DE69119382A DE69119382D1 (en) 1990-12-28 1991-12-20 A semiconductor device comprising a bipolar high-speed switching transistor
US08/215,616 US5469103A (en) 1990-12-28 1994-03-22 Diode circuit for high speed switching transistor

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US5469103A (en) 1995-11-21
EP0492558B1 (en) 1996-05-08
US5349230A (en) 1994-09-20
EP0492558A2 (en) 1992-07-01
DE69119382T2 (en) 1996-09-12
EP0492558A3 (en) 1993-04-21
JPH04233232A (en) 1992-08-21
DE69119382D1 (en) 1996-06-13

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