JPS6364076B2 - - Google Patents
Info
- Publication number
- JPS6364076B2 JPS6364076B2 JP58024733A JP2473383A JPS6364076B2 JP S6364076 B2 JPS6364076 B2 JP S6364076B2 JP 58024733 A JP58024733 A JP 58024733A JP 2473383 A JP2473383 A JP 2473383A JP S6364076 B2 JPS6364076 B2 JP S6364076B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- heat sink
- heat
- recess
- laser element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 56
- 230000010355 oscillation Effects 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 10
- 238000012546 transfer Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58024733A JPS59151484A (ja) | 1983-02-18 | 1983-02-18 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58024733A JPS59151484A (ja) | 1983-02-18 | 1983-02-18 | 半導体レ−ザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59151484A JPS59151484A (ja) | 1984-08-29 |
JPS6364076B2 true JPS6364076B2 (enrdf_load_stackoverflow) | 1988-12-09 |
Family
ID=12146347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58024733A Granted JPS59151484A (ja) | 1983-02-18 | 1983-02-18 | 半導体レ−ザ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59151484A (enrdf_load_stackoverflow) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0160567U (enrdf_load_stackoverflow) * | 1987-10-12 | 1989-04-17 | ||
US5284790A (en) * | 1990-01-03 | 1994-02-08 | Karpinski Arthur A | Method of fabricating monolithic laser diode array |
US5438580A (en) * | 1993-09-24 | 1995-08-01 | Opto Power Corporation | Laser package and method of assembly |
CN1327581C (zh) | 2002-03-25 | 2007-07-18 | 三洋电机株式会社 | 半导体激光器件 |
JP2006013551A (ja) * | 2002-03-25 | 2006-01-12 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
JP2007048839A (ja) * | 2005-08-08 | 2007-02-22 | Mitsubishi Electric Corp | 半導体素子 |
JP5368957B2 (ja) | 2009-12-04 | 2013-12-18 | シャープ株式会社 | 半導体レーザチップの製造方法 |
GB2514605B (en) * | 2013-05-30 | 2016-09-14 | Solus Tech Ltd | Method and apparatus for mounting a semiconductor disk laser (SDL) |
DE102013216526A1 (de) | 2013-08-21 | 2015-02-26 | Osram Opto Semiconductors Gmbh | Laserbauelement |
JP6773399B2 (ja) * | 2015-09-28 | 2020-10-21 | 京セラ株式会社 | 光素子搭載用パッケージおよび電子装置 |
DE102018009383A1 (de) * | 2018-11-30 | 2020-06-04 | Diehl Defence Gmbh & Co. Kg | Verfahren zum Herstellen eines Multistrahllasers |
US20230246412A1 (en) * | 2020-10-01 | 2023-08-03 | Mitsubishi Electric Corporation | Semiconductor laser device |
-
1983
- 1983-02-18 JP JP58024733A patent/JPS59151484A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59151484A (ja) | 1984-08-29 |
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