JPS6363564B2 - - Google Patents
Info
- Publication number
- JPS6363564B2 JPS6363564B2 JP15206979A JP15206979A JPS6363564B2 JP S6363564 B2 JPS6363564 B2 JP S6363564B2 JP 15206979 A JP15206979 A JP 15206979A JP 15206979 A JP15206979 A JP 15206979A JP S6363564 B2 JPS6363564 B2 JP S6363564B2
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- film
- gas
- substrate
- development
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000010408 film Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 15
- 230000018109 developmental process Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- -1 polyfluorinated alkyl methacrylate Chemical compound 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 150000001349 alkyl fluorides Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Polymerisation Methods In General (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15206979A JPS5676414A (en) | 1979-11-26 | 1979-11-26 | Discharge-polymerized membrane and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15206979A JPS5676414A (en) | 1979-11-26 | 1979-11-26 | Discharge-polymerized membrane and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5676414A JPS5676414A (en) | 1981-06-24 |
| JPS6363564B2 true JPS6363564B2 (enrdf_load_stackoverflow) | 1988-12-07 |
Family
ID=15532367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15206979A Granted JPS5676414A (en) | 1979-11-26 | 1979-11-26 | Discharge-polymerized membrane and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5676414A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57119906A (en) * | 1981-01-19 | 1982-07-26 | Daikin Ind Ltd | Formation of smooth film on substrate |
| JPS60188410A (ja) * | 1984-03-09 | 1985-09-25 | Daikin Ind Ltd | 被覆材料 |
-
1979
- 1979-11-26 JP JP15206979A patent/JPS5676414A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5676414A (en) | 1981-06-24 |
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