JPS6361150U - - Google Patents
Info
- Publication number
- JPS6361150U JPS6361150U JP15652986U JP15652986U JPS6361150U JP S6361150 U JPS6361150 U JP S6361150U JP 15652986 U JP15652986 U JP 15652986U JP 15652986 U JP15652986 U JP 15652986U JP S6361150 U JPS6361150 U JP S6361150U
- Authority
- JP
- Japan
- Prior art keywords
- package
- semiconductor chip
- semiconductor chips
- mentioned
- package unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Wire Bonding (AREA)
Description
第1図は本考案実施例の縦断面図、第2図はそ
のパツケージユニツトUの拡大縦断面図、第3図
は本考案の他の実施例のパツケージユニツトの縦
断面図である。 1a,1b,1c,1d……アルミナシート、
2,2′……デバイスピツト、2a……段部、3
……パツド、4……スルーホール、5……導電性
材料、6,6′……ボンデイングパツド、7……
ワイヤ、8……半田、9……配線パツド、B……
基板、C,C′……半導体チツプ、T……電極取
り出し端子、U,U′……パツケージユニツト。
のパツケージユニツトUの拡大縦断面図、第3図
は本考案の他の実施例のパツケージユニツトの縦
断面図である。 1a,1b,1c,1d……アルミナシート、
2,2′……デバイスピツト、2a……段部、3
……パツド、4……スルーホール、5……導電性
材料、6,6′……ボンデイングパツド、7……
ワイヤ、8……半田、9……配線パツド、B……
基板、C,C′……半導体チツプ、T……電極取
り出し端子、U,U′……パツケージユニツト。
Claims (1)
- 【実用新案登録請求の範囲】 (1) 複数の絶縁性シートを積層し、かつ、その
上面に半導体チツプを収容するためのデバイスピ
ツトを形成してなるパツケージユニツトの上・下
面に、上記半導体チツプの各電極取り出し端子に
対応するパツドを形成し、この各パツドと上記各
端子とを、上記各シート間に所定のパターンを介
在するとともに各シートに穿たれたスルーホール
内に存在する導電性材料を介して接続し、当該パ
ツケージユニツトの複数個を上下に積み重ねて隣
接する面上に形成された上記パツド間を相互に接
続してなる、半導体チツプの多層パツケージ。 (2) 上記デバイスピツトを段付きの凹形に形成
して、その段部に複数のボンデイングパツドを設
けて上記半導体チツプの各電極取り出し端子とワ
イヤで接続し、そのボンデイングワイヤが上記パ
ツケージユニツト上面より上方に突出しないよう
構成したことを特徴とする、実用新案登録請求の
範囲第1項記載の半導体チツプの多層パツケージ
。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15652986U JPS6361150U (ja) | 1986-10-13 | 1986-10-13 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15652986U JPS6361150U (ja) | 1986-10-13 | 1986-10-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6361150U true JPS6361150U (ja) | 1988-04-22 |
Family
ID=31078229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15652986U Pending JPS6361150U (ja) | 1986-10-13 | 1986-10-13 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6361150U (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232547A (ja) * | 1988-07-22 | 1990-02-02 | Matsushita Electric Ind Co Ltd | 半導体実装装置 |
JPH06275775A (ja) * | 1993-03-17 | 1994-09-30 | Nec Corp | 半導体装置 |
WO2007125744A1 (ja) * | 2006-04-25 | 2007-11-08 | Oki Electric Industry Co., Ltd. | 両面電極構造の半導体装置及びその製造方法 |
JP4795948B2 (ja) * | 2003-07-16 | 2011-10-19 | マックスウェル テクノロジーズ, インク | 放射線遮へい集積回路デバイス、集積回路デバイスを遮へいする方法、及び、集積回路ダイを放射線から保護する高信頼性パッケージを作る方法 |
JP2019033266A (ja) * | 2012-09-17 | 2019-02-28 | コミッサリア ア レネルジー アトミーク エ オ エナジーズ アルタナティブス | 溝付き及びチップ付きデバイス用のキャップ、キャップを装備するデバイス、デバイスと配線要素のアセンブリ、及びその製造方法 |
-
1986
- 1986-10-13 JP JP15652986U patent/JPS6361150U/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232547A (ja) * | 1988-07-22 | 1990-02-02 | Matsushita Electric Ind Co Ltd | 半導体実装装置 |
JPH06275775A (ja) * | 1993-03-17 | 1994-09-30 | Nec Corp | 半導体装置 |
JP4795948B2 (ja) * | 2003-07-16 | 2011-10-19 | マックスウェル テクノロジーズ, インク | 放射線遮へい集積回路デバイス、集積回路デバイスを遮へいする方法、及び、集積回路ダイを放射線から保護する高信頼性パッケージを作る方法 |
WO2007125744A1 (ja) * | 2006-04-25 | 2007-11-08 | Oki Electric Industry Co., Ltd. | 両面電極構造の半導体装置及びその製造方法 |
JP2019033266A (ja) * | 2012-09-17 | 2019-02-28 | コミッサリア ア レネルジー アトミーク エ オ エナジーズ アルタナティブス | 溝付き及びチップ付きデバイス用のキャップ、キャップを装備するデバイス、デバイスと配線要素のアセンブリ、及びその製造方法 |
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