JPS6359259B2 - - Google Patents

Info

Publication number
JPS6359259B2
JPS6359259B2 JP54130114A JP13011479A JPS6359259B2 JP S6359259 B2 JPS6359259 B2 JP S6359259B2 JP 54130114 A JP54130114 A JP 54130114A JP 13011479 A JP13011479 A JP 13011479A JP S6359259 B2 JPS6359259 B2 JP S6359259B2
Authority
JP
Japan
Prior art keywords
layer
substrate
opening
photoresist
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54130114A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5654059A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13011479A priority Critical patent/JPS5654059A/ja
Publication of JPS5654059A publication Critical patent/JPS5654059A/ja
Publication of JPS6359259B2 publication Critical patent/JPS6359259B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP13011479A 1979-10-09 1979-10-09 Roduction of semiconductor device Granted JPS5654059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13011479A JPS5654059A (en) 1979-10-09 1979-10-09 Roduction of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13011479A JPS5654059A (en) 1979-10-09 1979-10-09 Roduction of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5654059A JPS5654059A (en) 1981-05-13
JPS6359259B2 true JPS6359259B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-11-18

Family

ID=15026279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13011479A Granted JPS5654059A (en) 1979-10-09 1979-10-09 Roduction of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5654059A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122769A (ja) * 1982-01-18 1983-07-21 Seiko Epson Corp 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374361A (en) * 1976-12-15 1978-07-01 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5654059A (en) 1981-05-13

Similar Documents

Publication Publication Date Title
US4041518A (en) MIS semiconductor device and method of manufacturing the same
US4074300A (en) Insulated gate type field effect transistors
US3475234A (en) Method for making mis structures
JPH10303372A (ja) 半導体集積回路およびその製造方法
JPS63141349A (ja) 集積半導体回路とその製造方法
JPS6152584B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US5759887A (en) Semiconductor device and a method of manufacturing a semiconductor device
JP3128267B2 (ja) 半導体集積回路装置の製造方法
JP3489602B2 (ja) 半導体装置およびその製造方法
KR100258385B1 (ko) 반도체 장치
JP3054937B2 (ja) 半導体装置とその製造方法
JPS6359259B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0396267A (ja) 半導体集積回路装置
JPS6195565A (ja) エミツタ直列抵抗を有するバイポーラトランジスタの製造方法
JP3113202B2 (ja) 半導体装置
JPH0366815B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3651901B2 (ja) 横型バイポーラトランジスタの製造方法
JP3688756B2 (ja) 半導体装置およびその製造方法
JPH0258367A (ja) 半導体装置
JP2000058755A (ja) 半導体装置とその製造方法
JPH0463545B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2000216254A (ja) 半導体装置の製造方法
JPH10223842A (ja) 半導体集積回路およびその製造方法
JPS63155663A (ja) 半導体装置の製造方法
JPH01260849A (ja) 半導体装置の製造方法