JPS635913B2 - - Google Patents
Info
- Publication number
- JPS635913B2 JPS635913B2 JP57223055A JP22305582A JPS635913B2 JP S635913 B2 JPS635913 B2 JP S635913B2 JP 57223055 A JP57223055 A JP 57223055A JP 22305582 A JP22305582 A JP 22305582A JP S635913 B2 JPS635913 B2 JP S635913B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- film
- annealing
- conductor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 44
- 238000000137 annealing Methods 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 229910052582 BN Inorganic materials 0.000 description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02683—Continuous wave laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57223055A JPS59114853A (ja) | 1982-12-21 | 1982-12-21 | 積層集積回路素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57223055A JPS59114853A (ja) | 1982-12-21 | 1982-12-21 | 積層集積回路素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59114853A JPS59114853A (ja) | 1984-07-03 |
| JPS635913B2 true JPS635913B2 (ko) | 1988-02-05 |
Family
ID=16792125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57223055A Granted JPS59114853A (ja) | 1982-12-21 | 1982-12-21 | 積層集積回路素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59114853A (ko) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264296A (en) * | 1989-12-06 | 1993-11-23 | General Motors Corporation | Laser depositon of crystalline boron nitride films |
| US5330611A (en) * | 1989-12-06 | 1994-07-19 | General Motors Corporation | Cubic boron nitride carbide films |
| US5227318A (en) * | 1989-12-06 | 1993-07-13 | General Motors Corporation | Method of making a cubic boron nitride bipolar transistor |
| US5142350A (en) * | 1990-07-16 | 1992-08-25 | General Motors Corporation | Transistor having cubic boron nitride layer |
| US5232862A (en) * | 1990-07-16 | 1993-08-03 | General Motors Corporation | Method of fabricating a transistor having a cubic boron nitride layer |
| US20100193792A1 (en) * | 2007-07-20 | 2010-08-05 | Toshiaki Miyajima | Laminated film manufacturing method, semiconductor device manufacturing method, semiconductor device and display device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5821854A (ja) * | 1981-07-31 | 1983-02-08 | Sanyo Electric Co Ltd | 半導体回路素子 |
-
1982
- 1982-12-21 JP JP57223055A patent/JPS59114853A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5821854A (ja) * | 1981-07-31 | 1983-02-08 | Sanyo Electric Co Ltd | 半導体回路素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59114853A (ja) | 1984-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4596604A (en) | Method of manufacturing a multilayer semiconductor device | |
| US4479831A (en) | Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment | |
| JPH07114184B2 (ja) | 薄膜形シリコン半導体装置およびその製造方法 | |
| JPS59169121A (ja) | 半導体デバイスの製造方法 | |
| JPH0562451B2 (ko) | ||
| JPS635913B2 (ko) | ||
| JPH06163401A (ja) | 多結晶シリコン層の形成方法およびそれを用いた多結晶シリコン薄膜トランジスタ | |
| JPH06132306A (ja) | 半導体装置の製造方法 | |
| JPS621220A (ja) | 欠陥が局在された配向シリコン単結晶膜を絶縁支持体上に製造する方法 | |
| JPH0580159B2 (ko) | ||
| JPH029450B2 (ko) | ||
| JPS59114852A (ja) | 積層集積回路素子 | |
| JPS59114854A (ja) | 積層集積回路素子 | |
| JPS6211781B2 (ko) | ||
| JPS58139423A (ja) | ラテラルエピタキシヤル成長法 | |
| JPS6362894B2 (ko) | ||
| JPH0536911A (ja) | ３次元回路素子およびその製造方法 | |
| JPH07335901A (ja) | 半導体装置の製造方法 | |
| JP2526380B2 (ja) | 多層半導体基板の製造方法 | |
| JPS62181455A (ja) | 半導体装置の製造方法 | |
| JPH0336312B2 (ko) | ||
| JPS6315471A (ja) | 薄膜トランジスタとその製造方法 | |
| JPS6138859B2 (ko) | ||
| JPH02194561A (ja) | 薄膜半導体装置とその製造方法 | |
| JPS6339554B2 (ko) |