JPS6358800B2 - - Google Patents
Info
- Publication number
- JPS6358800B2 JPS6358800B2 JP12930485A JP12930485A JPS6358800B2 JP S6358800 B2 JPS6358800 B2 JP S6358800B2 JP 12930485 A JP12930485 A JP 12930485A JP 12930485 A JP12930485 A JP 12930485A JP S6358800 B2 JPS6358800 B2 JP S6358800B2
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- annealing
- wafer
- crystal
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 53
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 28
- 239000012298 atmosphere Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 45
- 238000000137 annealing Methods 0.000 description 40
- 238000000034 method Methods 0.000 description 32
- 238000009826 distribution Methods 0.000 description 29
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 26
- 230000007547 defect Effects 0.000 description 12
- 238000001816 cooling Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 108010053481 Antifreeze Proteins Proteins 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005184 irreversible process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12930485A JPS61286300A (ja) | 1985-06-13 | 1985-06-13 | 均一な特性を有するＧａＡｓ単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12930485A JPS61286300A (ja) | 1985-06-13 | 1985-06-13 | 均一な特性を有するＧａＡｓ単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61286300A JPS61286300A (ja) | 1986-12-16 |
| JPS6358800B2 true JPS6358800B2 (enrdf_load_stackoverflow) | 1988-11-16 |
Family
ID=15006253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12930485A Granted JPS61286300A (ja) | 1985-06-13 | 1985-06-13 | 均一な特性を有するＧａＡｓ単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61286300A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0787187B2 (ja) * | 1987-08-13 | 1995-09-20 | 古河電気工業株式会社 | ＧａＡｓ化合物半導体基板の製造方法 |
| JPH0699235B2 (ja) * | 1988-03-16 | 1994-12-07 | 株式会社ジャパンエナジー | 化合物半導体単結晶の製造方法 |
| JPH03193699A (ja) * | 1989-12-21 | 1991-08-23 | Sumitomo Metal Mining Co Ltd | 燐化ガリウム単結晶のウエハー切り出し前処理方法 |
-
1985
- 1985-06-13 JP JP12930485A patent/JPS61286300A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61286300A (ja) | 1986-12-16 |
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