JPS61286300A - 均一な特性を有するＧａＡｓ単結晶の製造方法 - Google Patents
均一な特性を有するＧａＡｓ単結晶の製造方法Info
- Publication number
- JPS61286300A JPS61286300A JP12930485A JP12930485A JPS61286300A JP S61286300 A JPS61286300 A JP S61286300A JP 12930485 A JP12930485 A JP 12930485A JP 12930485 A JP12930485 A JP 12930485A JP S61286300 A JPS61286300 A JP S61286300A
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- annealing
- crystal
- single crystal
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 title description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 32
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 abstract description 40
- 238000001816 cooling Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 description 28
- 235000012431 wafers Nutrition 0.000 description 19
- 230000007547 defect Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- RCJVRSBWZCNNQT-UHFFFAOYSA-N dichloridooxygen Chemical compound ClOCl RCJVRSBWZCNNQT-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- 108010053481 Antifreeze Proteins Proteins 0.000 description 1
- 101100264195 Caenorhabditis elegans app-1 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12930485A JPS61286300A (ja) | 1985-06-13 | 1985-06-13 | 均一な特性を有するＧａＡｓ単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12930485A JPS61286300A (ja) | 1985-06-13 | 1985-06-13 | 均一な特性を有するＧａＡｓ単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61286300A true JPS61286300A (ja) | 1986-12-16 |
| JPS6358800B2 JPS6358800B2 (enrdf_load_stackoverflow) | 1988-11-16 |
Family
ID=15006253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12930485A Granted JPS61286300A (ja) | 1985-06-13 | 1985-06-13 | 均一な特性を有するＧａＡｓ単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61286300A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6445126A (en) * | 1987-08-13 | 1989-02-17 | Furukawa Electric Co Ltd | Manufacture of gaas compound semiconductor substrate |
| JPH01239088A (ja) * | 1988-03-16 | 1989-09-25 | Nippon Mining Co Ltd | 化合物半導体単結晶の製造方法 |
| JPH03193699A (ja) * | 1989-12-21 | 1991-08-23 | Sumitomo Metal Mining Co Ltd | 燐化ガリウム単結晶のウエハー切り出し前処理方法 |
-
1985
- 1985-06-13 JP JP12930485A patent/JPS61286300A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6445126A (en) * | 1987-08-13 | 1989-02-17 | Furukawa Electric Co Ltd | Manufacture of gaas compound semiconductor substrate |
| JPH01239088A (ja) * | 1988-03-16 | 1989-09-25 | Nippon Mining Co Ltd | 化合物半導体単結晶の製造方法 |
| JPH03193699A (ja) * | 1989-12-21 | 1991-08-23 | Sumitomo Metal Mining Co Ltd | 燐化ガリウム単結晶のウエハー切り出し前処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6358800B2 (enrdf_load_stackoverflow) | 1988-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7846252B2 (en) | Silicon wafer for IGBT and method for producing same | |
| US6162708A (en) | Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer | |
| US6897084B2 (en) | Control of oxygen precipitate formation in high resistivity CZ silicon | |
| US7147711B2 (en) | Method of producing silicon wafer and silicon wafer | |
| US6544656B1 (en) | Production method for silicon wafer and silicon wafer | |
| US20030104222A1 (en) | Silicon wafer and epitaxial silicon wafer | |
| US6277193B1 (en) | Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device | |
| US5505157A (en) | Low hydrogen-content silicon crystal with few micro-defects caused from annealing, and its manufacturing methods | |
| US6902618B2 (en) | Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300 mm and its production method | |
| JP3381816B2 (ja) | 半導体基板の製造方法 | |
| EP1343200A1 (en) | Anneal wafer manufacturing method and anneal wafer | |
| JP7264100B2 (ja) | シリコン単結晶基板中のドナー濃度の制御方法 | |
| US7081422B2 (en) | Manufacturing process for annealed wafer and annealed wafer | |
| JPS61286300A (ja) | 均一な特性を有するＧａＡｓ単結晶の製造方法 | |
| JPH10223641A (ja) | 半導体シリコンエピタキシャルウェーハ及び半導体デバイスの製造方法 | |
| US8460463B2 (en) | Silicon wafer and method for producing the same | |
| JPH09199380A (ja) | エピタキシャルウエハ用シリコン基板及びその製造方法 | |
| JPH0411518B2 (enrdf_load_stackoverflow) | ||
| JPH09199381A (ja) | エピタキシャルウエハ用シリコン基板及びその製造法 | |
| JP3171451B2 (ja) | ＧａＡｓ単結晶の熱処理方法 |