JPS6358377B2 - - Google Patents

Info

Publication number
JPS6358377B2
JPS6358377B2 JP56062599A JP6259981A JPS6358377B2 JP S6358377 B2 JPS6358377 B2 JP S6358377B2 JP 56062599 A JP56062599 A JP 56062599A JP 6259981 A JP6259981 A JP 6259981A JP S6358377 B2 JPS6358377 B2 JP S6358377B2
Authority
JP
Japan
Prior art keywords
current
thyristor
layer
main
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56062599A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57178368A (en
Inventor
Yoshio Terasawa
Susumu Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56062599A priority Critical patent/JPS57178368A/ja
Publication of JPS57178368A publication Critical patent/JPS57178368A/ja
Publication of JPS6358377B2 publication Critical patent/JPS6358377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56062599A 1981-04-27 1981-04-27 Semiconductor device for breaking current Granted JPS57178368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062599A JPS57178368A (en) 1981-04-27 1981-04-27 Semiconductor device for breaking current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062599A JPS57178368A (en) 1981-04-27 1981-04-27 Semiconductor device for breaking current

Publications (2)

Publication Number Publication Date
JPS57178368A JPS57178368A (en) 1982-11-02
JPS6358377B2 true JPS6358377B2 (enrdf_load_html_response) 1988-11-15

Family

ID=13204947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062599A Granted JPS57178368A (en) 1981-04-27 1981-04-27 Semiconductor device for breaking current

Country Status (1)

Country Link
JP (1) JPS57178368A (enrdf_load_html_response)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721335Y2 (enrdf_load_html_response) * 1974-02-22 1982-05-08
JPS5166783A (ja) * 1974-12-05 1976-06-09 Mitsubishi Electric Corp Handotaisochi
JPS5915185B2 (ja) * 1976-11-16 1984-04-07 三菱電機株式会社 サイリスタ
JPS55111168A (en) * 1979-02-21 1980-08-27 Meidensha Electric Mfg Co Ltd Turn-off thyristor

Also Published As

Publication number Publication date
JPS57178368A (en) 1982-11-02

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