JPS6356702B2 - - Google Patents

Info

Publication number
JPS6356702B2
JPS6356702B2 JP58246398A JP24639883A JPS6356702B2 JP S6356702 B2 JPS6356702 B2 JP S6356702B2 JP 58246398 A JP58246398 A JP 58246398A JP 24639883 A JP24639883 A JP 24639883A JP S6356702 B2 JPS6356702 B2 JP S6356702B2
Authority
JP
Japan
Prior art keywords
pattern
reference marks
inspected
output
deviation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58246398A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60138921A (ja
Inventor
Tomohide Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58246398A priority Critical patent/JPS60138921A/ja
Publication of JPS60138921A publication Critical patent/JPS60138921A/ja
Publication of JPS6356702B2 publication Critical patent/JPS6356702B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Processing (AREA)
  • Image Analysis (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58246398A 1983-12-27 1983-12-27 パタ−ン形状検査装置 Granted JPS60138921A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58246398A JPS60138921A (ja) 1983-12-27 1983-12-27 パタ−ン形状検査装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58246398A JPS60138921A (ja) 1983-12-27 1983-12-27 パタ−ン形状検査装置

Publications (2)

Publication Number Publication Date
JPS60138921A JPS60138921A (ja) 1985-07-23
JPS6356702B2 true JPS6356702B2 (OSRAM) 1988-11-09

Family

ID=17147916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58246398A Granted JPS60138921A (ja) 1983-12-27 1983-12-27 パタ−ン形状検査装置

Country Status (1)

Country Link
JP (1) JPS60138921A (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63286752A (ja) * 1987-05-20 1988-11-24 Toshiba Mach Co Ltd パタ−ンの欠陥検査または寸法測定方法
KR100265827B1 (ko) * 1993-10-30 2000-09-15 김영환 레티클 제조 정확도 측정방법
JP4767665B2 (ja) * 2005-01-05 2011-09-07 富士通セミコンダクター株式会社 レチクル検査装置およびレチクル検査方法
JP5793093B2 (ja) * 2012-02-17 2015-10-14 株式会社ニューフレアテクノロジー 検査装置および検査方法
JP2014211352A (ja) * 2013-04-18 2014-11-13 株式会社東芝 テンプレートの検査装置及びテンプレートの検査方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654038A (en) * 1979-10-08 1981-05-13 Toshiba Corp Checking device for shape of photomask
JPS5837923A (ja) * 1981-08-31 1983-03-05 Toshiba Corp フオトマスクの検査装置

Also Published As

Publication number Publication date
JPS60138921A (ja) 1985-07-23

Similar Documents

Publication Publication Date Title
US5671056A (en) Three-dimensional form measuring apparatus and method
US5777722A (en) Scanning exposure apparatus and method
JP6209833B2 (ja) 検査用具、検査方法、ステレオカメラの生産方法及びシステム
EP0132122B1 (en) Apparatus for inspecting mask for use in manufacturing large scale integrated circuits
JPS643050B2 (OSRAM)
JPS59119204A (ja) マ−ク位置検出方法
US6819789B1 (en) Scaling and registration calibration especially in printed circuit board fabrication
JP2006215528A (ja) レチクル検査装置およびレチクル検査方法
KR100763431B1 (ko) 노광 장치 및 노광 방법
JPS6356702B2 (OSRAM)
JP3958327B2 (ja) 試料検査装置及び試料検査方法
US6330053B1 (en) Image alignment method in checking reticle pattern
JP2005300628A (ja) ローカルアライメント機能を有する露光装置
JP3040845B2 (ja) アライメントマーク
JP2005136743A (ja) 撮像素子の位置調整装置及び位置調整方法
KR102689332B1 (ko) 위치 측정 방법
JP3111869B2 (ja) ２次元位置姿勢測定方法及び装置
JP4261535B2 (ja) マスク検査装置におけるアライメント方法および評価方法
JPH10311705A (ja) 画像入力装置
JPH11132735A (ja) Ｉｃリード浮き検査装置及び検査方法
JPH11101641A (ja) カメラおよびカメラのキャリブレーション方法
JP2001272217A (ja) パターン検査システムの検査条件補正方法、半導体製造用マスク、パターン検査システムおよび記録媒体
JPH08330219A (ja) 走査型露光装置
JPH07302754A (ja) 走査型露光装置
JPH05172531A (ja) 距離計測方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term