JPS6356505B2 - - Google Patents
Info
- Publication number
- JPS6356505B2 JPS6356505B2 JP57103800A JP10380082A JPS6356505B2 JP S6356505 B2 JPS6356505 B2 JP S6356505B2 JP 57103800 A JP57103800 A JP 57103800A JP 10380082 A JP10380082 A JP 10380082A JP S6356505 B2 JPS6356505 B2 JP S6356505B2
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- output
- drain
- open
- channel mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10380082A JPS58221174A (ja) | 1982-06-18 | 1982-06-18 | 半導体装置の試験方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10380082A JPS58221174A (ja) | 1982-06-18 | 1982-06-18 | 半導体装置の試験方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58221174A JPS58221174A (ja) | 1983-12-22 |
| JPS6356505B2 true JPS6356505B2 (enExample) | 1988-11-08 |
Family
ID=14363467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10380082A Granted JPS58221174A (ja) | 1982-06-18 | 1982-06-18 | 半導体装置の試験方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58221174A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10154763A1 (de) * | 2001-11-09 | 2003-05-22 | Continental Teves Ag & Co Ohg | Verfahren und Schaltungsanordnung zur Erkennung eines Defekts von Halbleiterschaltelementen und deren Verwendung in elektronischen Bremskraft- und Fahrdynamikreglern |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5394567U (enExample) * | 1976-12-29 | 1978-08-01 |
-
1982
- 1982-06-18 JP JP10380082A patent/JPS58221174A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58221174A (ja) | 1983-12-22 |
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