JPS6356505B2 - - Google Patents

Info

Publication number
JPS6356505B2
JPS6356505B2 JP57103800A JP10380082A JPS6356505B2 JP S6356505 B2 JPS6356505 B2 JP S6356505B2 JP 57103800 A JP57103800 A JP 57103800A JP 10380082 A JP10380082 A JP 10380082A JP S6356505 B2 JPS6356505 B2 JP S6356505B2
Authority
JP
Japan
Prior art keywords
mos transistor
output
drain
open
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57103800A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58221174A (ja
Inventor
Masahiro Oonishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP10380082A priority Critical patent/JPS58221174A/ja
Publication of JPS58221174A publication Critical patent/JPS58221174A/ja
Publication of JPS6356505B2 publication Critical patent/JPS6356505B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2621Circuits therefor for testing field effect transistors, i.e. FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP10380082A 1982-06-18 1982-06-18 半導体装置の試験方法 Granted JPS58221174A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10380082A JPS58221174A (ja) 1982-06-18 1982-06-18 半導体装置の試験方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10380082A JPS58221174A (ja) 1982-06-18 1982-06-18 半導体装置の試験方法

Publications (2)

Publication Number Publication Date
JPS58221174A JPS58221174A (ja) 1983-12-22
JPS6356505B2 true JPS6356505B2 (enExample) 1988-11-08

Family

ID=14363467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10380082A Granted JPS58221174A (ja) 1982-06-18 1982-06-18 半導体装置の試験方法

Country Status (1)

Country Link
JP (1) JPS58221174A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10154763A1 (de) * 2001-11-09 2003-05-22 Continental Teves Ag & Co Ohg Verfahren und Schaltungsanordnung zur Erkennung eines Defekts von Halbleiterschaltelementen und deren Verwendung in elektronischen Bremskraft- und Fahrdynamikreglern

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394567U (enExample) * 1976-12-29 1978-08-01

Also Published As

Publication number Publication date
JPS58221174A (ja) 1983-12-22

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