JPS6355233B2 - - Google Patents

Info

Publication number
JPS6355233B2
JPS6355233B2 JP58242810A JP24281083A JPS6355233B2 JP S6355233 B2 JPS6355233 B2 JP S6355233B2 JP 58242810 A JP58242810 A JP 58242810A JP 24281083 A JP24281083 A JP 24281083A JP S6355233 B2 JPS6355233 B2 JP S6355233B2
Authority
JP
Japan
Prior art keywords
uneven surface
semiconductor
semiconductor substrate
semiconductor layer
periodic structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58242810A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60134490A (ja
Inventor
Etsuo Noguchi
Haruo Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58242810A priority Critical patent/JPS60134490A/ja
Publication of JPS60134490A publication Critical patent/JPS60134490A/ja
Publication of JPS6355233B2 publication Critical patent/JPS6355233B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP58242810A 1983-12-22 1983-12-22 周期性構造を有する半導体レ−ザの製法 Granted JPS60134490A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58242810A JPS60134490A (ja) 1983-12-22 1983-12-22 周期性構造を有する半導体レ−ザの製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58242810A JPS60134490A (ja) 1983-12-22 1983-12-22 周期性構造を有する半導体レ−ザの製法

Publications (2)

Publication Number Publication Date
JPS60134490A JPS60134490A (ja) 1985-07-17
JPS6355233B2 true JPS6355233B2 (enExample) 1988-11-01

Family

ID=17094620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58242810A Granted JPS60134490A (ja) 1983-12-22 1983-12-22 周期性構造を有する半導体レ−ザの製法

Country Status (1)

Country Link
JP (1) JPS60134490A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652037U (ja) * 1992-12-11 1994-07-15 株式会社金星社 誤挿入防止装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652037U (ja) * 1992-12-11 1994-07-15 株式会社金星社 誤挿入防止装置

Also Published As

Publication number Publication date
JPS60134490A (ja) 1985-07-17

Similar Documents

Publication Publication Date Title
JPS62194691A (ja) 光導波路領域を有する半導体光集積装置の製造方法
US5023198A (en) Method for fabricating self-stabilized semiconductor gratings
US4782035A (en) Method of forming a waveguide for a DFB laser using photo-assisted epitaxy
US4999841A (en) Semiconductor lasers
JPS6355233B2 (enExample)
JPH0846300A (ja) 量子井戸を有する半導体構造における波長のシフト方法
JPH06132610A (ja) 半導体レーザアレイ素子及びその製造方法
JP3019174B2 (ja) 多波長レーザの製造方法
JPS6355232B2 (enExample)
JP2682482B2 (ja) 化合物半導体集積回路の製造方法
JPS6023517B2 (ja) 半導体レ−ザ素子
JP2751954B2 (ja) 化合物半導体微細パターンの形成方法
JP2924041B2 (ja) モノリシック集積型半導体光素子
JPH01186693A (ja) 半導体装置およびその製造方法
JPS63263788A (ja) 半導体レ−ザ
JP3154430B2 (ja) Ａｌ Ｇａ Ａｓ 薄膜成長方法
JPS5882585A (ja) 半導体レ−ザの製造方法
JPH1056231A (ja) 半導体レーザ素子の製造方法および半導体レーザ素子
JPH0310222B2 (enExample)
JPS58194386A (ja) 半導体素子の製造方法
JPH0661473A (ja) 半導体装置の製造方法
JPS6025287A (ja) 化合物半導体装置およびその製造方法
JPS6381888A (ja) 半導体レ−ザの作製方法
JPH01293686A (ja) 半導体レーザ素子の製造方法
JPS6066888A (ja) 半導体レ−ザアレイ装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term