JPS6355218B2 - - Google Patents
Info
- Publication number
- JPS6355218B2 JPS6355218B2 JP54125389A JP12538979A JPS6355218B2 JP S6355218 B2 JPS6355218 B2 JP S6355218B2 JP 54125389 A JP54125389 A JP 54125389A JP 12538979 A JP12538979 A JP 12538979A JP S6355218 B2 JPS6355218 B2 JP S6355218B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- terminal
- region
- switching element
- semiconductor switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 62
- 230000005669 field effect Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 15
- 101000663006 Homo sapiens Poly [ADP-ribose] polymerase tankyrase-1 Proteins 0.000 claims 1
- 102100037664 Poly [ADP-ribose] polymerase tankyrase-1 Human genes 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12538979A JPS5650555A (en) | 1979-10-01 | 1979-10-01 | Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12538979A JPS5650555A (en) | 1979-10-01 | 1979-10-01 | Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5650555A JPS5650555A (en) | 1981-05-07 |
| JPS6355218B2 true JPS6355218B2 (de) | 1988-11-01 |
Family
ID=14908919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12538979A Granted JPS5650555A (en) | 1979-10-01 | 1979-10-01 | Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5650555A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61283158A (ja) * | 1985-06-10 | 1986-12-13 | Nec Corp | 相補型ｍｏｓトランジスタ回路 |
| JPH01124718U (de) * | 1988-02-18 | 1989-08-24 | ||
| JP2012049946A (ja) * | 2010-08-30 | 2012-03-08 | Toyota Motor Corp | 電圧駆動型素子を駆動する駆動装置 |
-
1979
- 1979-10-01 JP JP12538979A patent/JPS5650555A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5650555A (en) | 1981-05-07 |
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