JPS6354785A - ヘテロ接合磁気センサ - Google Patents
ヘテロ接合磁気センサInfo
- Publication number
- JPS6354785A JPS6354785A JP61198508A JP19850886A JPS6354785A JP S6354785 A JPS6354785 A JP S6354785A JP 61198508 A JP61198508 A JP 61198508A JP 19850886 A JP19850886 A JP 19850886A JP S6354785 A JPS6354785 A JP S6354785A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic sensor
- heterojunction
- doped
- electron gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 9
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 19
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 3
- 125000005842 heteroatom Chemical group 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 16
- 230000035945 sensitivity Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910017401 Au—Ge Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61198508A JPS6354785A (ja) | 1986-08-25 | 1986-08-25 | ヘテロ接合磁気センサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61198508A JPS6354785A (ja) | 1986-08-25 | 1986-08-25 | ヘテロ接合磁気センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6354785A true JPS6354785A (ja) | 1988-03-09 |
| JPH0342707B2 JPH0342707B2 (enExample) | 1991-06-28 |
Family
ID=16392301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61198508A Granted JPS6354785A (ja) | 1986-08-25 | 1986-08-25 | ヘテロ接合磁気センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6354785A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4912451A (en) * | 1988-03-28 | 1990-03-27 | Nippon Soken, Inc. | Heterojunction magnetic field sensor |
| FR2691839A1 (fr) * | 1992-05-27 | 1993-12-03 | Schlumberger Ind Sa | Capteur à Effet Hall. |
| JP2010512017A (ja) * | 2006-12-07 | 2010-04-15 | 韓國電子通信研究院 | 電流拡散層を含む発光ダイオードの製造方法 |
| US8035927B2 (en) | 2008-01-28 | 2011-10-11 | Hitachi Global Storage Technologies Netherlands B.V. | EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact |
| US8059373B2 (en) | 2006-10-16 | 2011-11-15 | Hitachi Global Storage Technologies Netherlands, B.V. | EMR sensor and transistor formed on the same substrate |
| CN115207207A (zh) * | 2022-09-14 | 2022-10-18 | 深圳市柯雷科技开发有限公司 | 氮化物和磁致伸缩材料复合结构压力传感器制作方法 |
-
1986
- 1986-08-25 JP JP61198508A patent/JPS6354785A/ja active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4912451A (en) * | 1988-03-28 | 1990-03-27 | Nippon Soken, Inc. | Heterojunction magnetic field sensor |
| FR2691839A1 (fr) * | 1992-05-27 | 1993-12-03 | Schlumberger Ind Sa | Capteur à Effet Hall. |
| US5442221A (en) * | 1992-05-27 | 1995-08-15 | Schlumberger Industries, S.A. | Hall effect sensor |
| US8059373B2 (en) | 2006-10-16 | 2011-11-15 | Hitachi Global Storage Technologies Netherlands, B.V. | EMR sensor and transistor formed on the same substrate |
| JP2010512017A (ja) * | 2006-12-07 | 2010-04-15 | 韓國電子通信研究院 | 電流拡散層を含む発光ダイオードの製造方法 |
| US8035927B2 (en) | 2008-01-28 | 2011-10-11 | Hitachi Global Storage Technologies Netherlands B.V. | EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact |
| CN115207207A (zh) * | 2022-09-14 | 2022-10-18 | 深圳市柯雷科技开发有限公司 | 氮化物和磁致伸缩材料复合结构压力传感器制作方法 |
| CN115207207B (zh) * | 2022-09-14 | 2023-02-24 | 深圳市柯雷科技开发有限公司 | 基于复合氮化物和磁致伸缩材料结构的高灵敏度压力传感器制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0342707B2 (enExample) | 1991-06-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |