JPH0342707B2 - - Google Patents
Info
- Publication number
- JPH0342707B2 JPH0342707B2 JP61198508A JP19850886A JPH0342707B2 JP H0342707 B2 JPH0342707 B2 JP H0342707B2 JP 61198508 A JP61198508 A JP 61198508A JP 19850886 A JP19850886 A JP 19850886A JP H0342707 B2 JPH0342707 B2 JP H0342707B2
- Authority
- JP
- Japan
- Prior art keywords
- heterojunction
- layer
- magnetic sensor
- hall
- algaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 16
- 230000035945 sensitivity Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910017401 Au—Ge Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61198508A JPS6354785A (ja) | 1986-08-25 | 1986-08-25 | ヘテロ接合磁気センサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61198508A JPS6354785A (ja) | 1986-08-25 | 1986-08-25 | ヘテロ接合磁気センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6354785A JPS6354785A (ja) | 1988-03-09 |
| JPH0342707B2 true JPH0342707B2 (enExample) | 1991-06-28 |
Family
ID=16392301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61198508A Granted JPS6354785A (ja) | 1986-08-25 | 1986-08-25 | ヘテロ接合磁気センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6354785A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4912451A (en) * | 1988-03-28 | 1990-03-27 | Nippon Soken, Inc. | Heterojunction magnetic field sensor |
| FR2691839B1 (fr) * | 1992-05-27 | 1994-08-05 | Schlumberger Ind Sa | Capteur a effet hall. |
| US8059373B2 (en) | 2006-10-16 | 2011-11-15 | Hitachi Global Storage Technologies Netherlands, B.V. | EMR sensor and transistor formed on the same substrate |
| KR100869962B1 (ko) * | 2006-12-07 | 2008-11-24 | 한국전자통신연구원 | 전류 확산층을 포함하는 발광소자의 제조방법 |
| US8035927B2 (en) | 2008-01-28 | 2011-10-11 | Hitachi Global Storage Technologies Netherlands B.V. | EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact |
| CN115207207B (zh) * | 2022-09-14 | 2023-02-24 | 深圳市柯雷科技开发有限公司 | 基于复合氮化物和磁致伸缩材料结构的高灵敏度压力传感器制作方法 |
-
1986
- 1986-08-25 JP JP61198508A patent/JPS6354785A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6354785A (ja) | 1988-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |