JPS6354212B2 - - Google Patents

Info

Publication number
JPS6354212B2
JPS6354212B2 JP57122027A JP12202782A JPS6354212B2 JP S6354212 B2 JPS6354212 B2 JP S6354212B2 JP 57122027 A JP57122027 A JP 57122027A JP 12202782 A JP12202782 A JP 12202782A JP S6354212 B2 JPS6354212 B2 JP S6354212B2
Authority
JP
Japan
Prior art keywords
diffusing
region
layer
semiconductor substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57122027A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5913322A (ja
Inventor
Takashi Suzuki
Shigeki Sakuraba
Katsumi Akabane
Tadashi Sakagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57122027A priority Critical patent/JPS5913322A/ja
Publication of JPS5913322A publication Critical patent/JPS5913322A/ja
Publication of JPS6354212B2 publication Critical patent/JPS6354212B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P32/12
    • H10P32/171

Landscapes

  • Thyristors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP57122027A 1982-07-15 1982-07-15 半導体装置の製造方法 Granted JPS5913322A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57122027A JPS5913322A (ja) 1982-07-15 1982-07-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57122027A JPS5913322A (ja) 1982-07-15 1982-07-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5913322A JPS5913322A (ja) 1984-01-24
JPS6354212B2 true JPS6354212B2 (enExample) 1988-10-27

Family

ID=14825774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57122027A Granted JPS5913322A (ja) 1982-07-15 1982-07-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5913322A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145660A (ja) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp 半導体装置の製造方法
DE3531631A1 (de) * 1985-09-05 1987-03-05 Licentia Gmbh Asymmetrischer thyristor und verfahren zu seiner herstellung

Also Published As

Publication number Publication date
JPS5913322A (ja) 1984-01-24

Similar Documents

Publication Publication Date Title
US3226611A (en) Semiconductor device
JP2995723B2 (ja) ウェーハ・ボンディングを利用した縦型電流半導体デバイスおよびその製作方法
US3147152A (en) Diffusion control in semiconductive bodies
JPH0222869A (ja) 対称阻止高降伏電圧半導体デバイスとその製造方法
US4046609A (en) Method of manufacturing photo-diodes utilizing sequential diffusion
JPH05347413A (ja) 半導体装置の製造方法
US4999684A (en) Symmetrical blocking high voltage breakdown semiconducotr device
US3338758A (en) Surface gradient protected high breakdown junctions
JP4636685B2 (ja) ダイオードの製造方法
JP2989113B2 (ja) 半導体装置およびその製法
JPS6354212B2 (enExample)
JPH02298073A (ja) 半導体装置の製造方法
JPH0547913A (ja) 半導体装置の製造方法
JPH07235550A (ja) 半導体装置及びその製造方法
JPS6143858B2 (enExample)
JPS6221277B2 (enExample)
JPH0580833B2 (enExample)
JP2633411B2 (ja) 半導体装置の製造方法
JPS61251083A (ja) 半導体装置
JP2002324807A (ja) 半導体装置の製造方法
JPS5816333B2 (ja) 半導体装置およびその製造方法
JPS62183174A (ja) 半導体装置の製造方法
JPS6347965A (ja) 半導体集積回路
JPH065885A (ja) Pn接合ダイオードおよびその製造方法
JPH0365014B2 (enExample)