JPS6353713B2 - - Google Patents
Info
- Publication number
- JPS6353713B2 JPS6353713B2 JP56002898A JP289881A JPS6353713B2 JP S6353713 B2 JPS6353713 B2 JP S6353713B2 JP 56002898 A JP56002898 A JP 56002898A JP 289881 A JP289881 A JP 289881A JP S6353713 B2 JPS6353713 B2 JP S6353713B2
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- thin film
- terminal
- semiconductor thin
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 24
- 230000000694 effects Effects 0.000 claims description 11
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56002898A JPS57115889A (en) | 1981-01-12 | 1981-01-12 | Four-terminal magnetic resistance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56002898A JPS57115889A (en) | 1981-01-12 | 1981-01-12 | Four-terminal magnetic resistance element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57115889A JPS57115889A (en) | 1982-07-19 |
JPS6353713B2 true JPS6353713B2 (enrdf_load_stackoverflow) | 1988-10-25 |
Family
ID=11542166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56002898A Granted JPS57115889A (en) | 1981-01-12 | 1981-01-12 | Four-terminal magnetic resistance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57115889A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63226084A (ja) * | 1987-03-13 | 1988-09-20 | Matsushita Electric Ind Co Ltd | 磁気抵抗素子 |
-
1981
- 1981-01-12 JP JP56002898A patent/JPS57115889A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57115889A (en) | 1982-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4251795A (en) | Semiconductor magnetoresistive element having a differential effect | |
KR20000029928A (ko) | 자기전류센서 | |
US20030211638A1 (en) | Method for manufacturing magnetic sensor | |
JPH01321612A (ja) | 重ね合わせたかカプセル化した金属導電路を提供する方法 | |
JP2587822B2 (ja) | 強磁性体磁気抵抗素子 | |
JPS6353713B2 (enrdf_load_stackoverflow) | ||
JPS6354233B2 (enrdf_load_stackoverflow) | ||
US3296573A (en) | Substrate configurations for hall elements | |
JPS6249994B2 (enrdf_load_stackoverflow) | ||
JP2610083B2 (ja) | 強磁性体磁気抵抗素子 | |
JPH0419582A (ja) | 酸化物超伝導量子干渉デバイス | |
JPS5916430B2 (ja) | ジヨセフソン接合素子とその製造方法 | |
JP3085147B2 (ja) | 磁電変換素子 | |
KR910007121B1 (ko) | 반도체박막 적층구조의 홀소자 | |
JPH022174A (ja) | 高分子エレクトロニクス装置の製造方法 | |
JPS62128578A (ja) | 強磁性体磁気抵抗素子およびその製造法 | |
KR940003922B1 (ko) | 자기저항소자의 제조방법 | |
JPS592391B2 (ja) | ジヨセフソン接合素子とその製造方法 | |
JP3715380B2 (ja) | ホール素子 | |
JPS592390B2 (ja) | ジヨセフソン接合素子とその製造方法 | |
JPS6145874B2 (enrdf_load_stackoverflow) | ||
JPH0258880A (ja) | 半導体磁気抵抗素子 | |
JPH0382177A (ja) | 磁気抵抗素子の製造方法 | |
JPH04179289A (ja) | 磁気抵抗素子 | |
JPH09331088A (ja) | ホール素子 |