JPS6351630A - シリコン基板への電極形成法 - Google Patents
シリコン基板への電極形成法Info
- Publication number
- JPS6351630A JPS6351630A JP19404886A JP19404886A JPS6351630A JP S6351630 A JPS6351630 A JP S6351630A JP 19404886 A JP19404886 A JP 19404886A JP 19404886 A JP19404886 A JP 19404886A JP S6351630 A JPS6351630 A JP S6351630A
- Authority
- JP
- Japan
- Prior art keywords
- base metal
- silicon substrate
- evaporation source
- source supply
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 87
- 239000010703 silicon Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 43
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 124
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 63
- 239000010953 base metal Substances 0.000 claims abstract description 60
- 238000001704 evaporation Methods 0.000 claims abstract description 51
- 230000008020 evaporation Effects 0.000 claims abstract description 45
- 239000007789 gas Substances 0.000 claims abstract description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 26
- 150000004767 nitrides Chemical class 0.000 claims abstract description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 20
- 239000010936 titanium Substances 0.000 claims abstract description 20
- 230000005284 excitation Effects 0.000 claims abstract description 16
- 229910052786 argon Inorganic materials 0.000 claims abstract description 15
- 150000002500 ions Chemical class 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 238000000992 sputter etching Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 69
- 238000007747 plating Methods 0.000 description 24
- 229910000679 solder Inorganic materials 0.000 description 18
- 239000002245 particle Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 238000001771 vacuum deposition Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- -1 argon ions Chemical class 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- FBMUYWXYWIZLNE-UHFFFAOYSA-N nickel phosphide Chemical compound [Ni]=P#[Ni] FBMUYWXYWIZLNE-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- SIGUVTURIMRFDD-UHFFFAOYSA-M sodium dioxidophosphanium Chemical compound [Na+].[O-][PH2]=O SIGUVTURIMRFDD-UHFFFAOYSA-M 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- NMJKIRUDPFBRHW-UHFFFAOYSA-N titanium Chemical compound [Ti].[Ti] NMJKIRUDPFBRHW-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19404886A JPS6351630A (ja) | 1986-08-21 | 1986-08-21 | シリコン基板への電極形成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19404886A JPS6351630A (ja) | 1986-08-21 | 1986-08-21 | シリコン基板への電極形成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6351630A true JPS6351630A (ja) | 1988-03-04 |
| JPH0581050B2 JPH0581050B2 (enrdf_load_html_response) | 1993-11-11 |
Family
ID=16318075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19404886A Granted JPS6351630A (ja) | 1986-08-21 | 1986-08-21 | シリコン基板への電極形成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6351630A (enrdf_load_html_response) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5231053A (en) * | 1990-12-27 | 1993-07-27 | Intel Corporation | Process of forming a tri-layer titanium coating for an aluminum layer of a semiconductor device |
| US5488014A (en) * | 1990-08-28 | 1996-01-30 | Mitsubishi Denki Kabushiki Kaisha | Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor |
| JP2001189473A (ja) * | 1999-12-28 | 2001-07-10 | Sanyo Electric Co Ltd | 光起電力素子及びその製造方法 |
| KR100458294B1 (ko) * | 1997-12-30 | 2005-02-23 | 주식회사 하이닉스반도체 | 반도체소자의장벽금속층형성방법 |
| WO2013149481A1 (zh) * | 2012-04-05 | 2013-10-10 | 中国科学院微电子研究所 | 一种常压等离子体自由基清洗系统 |
| JP2014500620A (ja) * | 2010-11-10 | 2014-01-09 | クリー インコーポレイテッド | コンタクトパッドおよびその製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142633A (en) * | 1980-04-08 | 1981-11-07 | Mitsubishi Electric Corp | Forming method for back electrode of semiconductor wafer |
| JPS58102521A (ja) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58158918A (ja) * | 1982-03-16 | 1983-09-21 | Nippon Telegr & Teleph Corp <Ntt> | 金属窒化物薄膜の製造方法 |
| JPS59208727A (ja) * | 1983-05-12 | 1984-11-27 | Mitsubishi Electric Corp | プラズマエツチング装置 |
| JPS605560A (ja) * | 1983-06-23 | 1985-01-12 | Fujitsu Ltd | 半導体装置 |
-
1986
- 1986-08-21 JP JP19404886A patent/JPS6351630A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142633A (en) * | 1980-04-08 | 1981-11-07 | Mitsubishi Electric Corp | Forming method for back electrode of semiconductor wafer |
| JPS58102521A (ja) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58158918A (ja) * | 1982-03-16 | 1983-09-21 | Nippon Telegr & Teleph Corp <Ntt> | 金属窒化物薄膜の製造方法 |
| JPS59208727A (ja) * | 1983-05-12 | 1984-11-27 | Mitsubishi Electric Corp | プラズマエツチング装置 |
| JPS605560A (ja) * | 1983-06-23 | 1985-01-12 | Fujitsu Ltd | 半導体装置 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5488014A (en) * | 1990-08-28 | 1996-01-30 | Mitsubishi Denki Kabushiki Kaisha | Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor |
| US5231053A (en) * | 1990-12-27 | 1993-07-27 | Intel Corporation | Process of forming a tri-layer titanium coating for an aluminum layer of a semiconductor device |
| KR100458294B1 (ko) * | 1997-12-30 | 2005-02-23 | 주식회사 하이닉스반도체 | 반도체소자의장벽금속층형성방법 |
| JP2001189473A (ja) * | 1999-12-28 | 2001-07-10 | Sanyo Electric Co Ltd | 光起電力素子及びその製造方法 |
| JP2014500620A (ja) * | 2010-11-10 | 2014-01-09 | クリー インコーポレイテッド | コンタクトパッドおよびその製造方法 |
| US9607955B2 (en) | 2010-11-10 | 2017-03-28 | Cree, Inc. | Contact pad |
| WO2013149481A1 (zh) * | 2012-04-05 | 2013-10-10 | 中国科学院微电子研究所 | 一种常压等离子体自由基清洗系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0581050B2 (enrdf_load_html_response) | 1993-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |