WO2013149481A1 - 一种常压等离子体自由基清洗系统 - Google Patents

一种常压等离子体自由基清洗系统 Download PDF

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Publication number
WO2013149481A1
WO2013149481A1 PCT/CN2012/086414 CN2012086414W WO2013149481A1 WO 2013149481 A1 WO2013149481 A1 WO 2013149481A1 CN 2012086414 W CN2012086414 W CN 2012086414W WO 2013149481 A1 WO2013149481 A1 WO 2013149481A1
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plasma generator
plasma
intermediate frequency
frequency plasma
free radical
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PCT/CN2012/086414
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English (en)
French (fr)
Inventor
王守国
贾少霞
赵玲利
杨景华
辛继录
张宸
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中国科学院微电子研究所
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Publication of WO2013149481A1 publication Critical patent/WO2013149481A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Definitions

  • the invention relates to an atmospheric pressure plasma radical cleaning system.
  • the system comprises an intermediate frequency plasma generator and an RF plasma generator, and a working gas is introduced. After the power is turned on, the two plasmas are generated.
  • the device produces a free radical beam of different energy for cleaning photoresist and organic contaminants on the silicon wafer or organic contaminants on other substrates. Background technique
  • Improper cleaning of silicon wafer photoresist may result in the scrapping of all silicon wafers, or poor performance, stability and reliability of the fabricated devices. Rapid development of large-scale integrated circuits, continuous reduction of line width, and damage-free cleaning of silicon wafers. The requirements are getting higher and higher, people have gradually realized that the wet cleaning can not be precisely controlled, the cleaning is not complete, the introduction of new impurities, the waste liquid pollute the environment and other shortcomings. Now, the atmospheric pressure dry cleaning silicon wafer photoresist has appeared.
  • One method is to use a radical cleaning photoresist. At present, this method uses a single power source and a single plasma generator. The rate of removing the photoresist is slow, and the device is easily damaged. Or problems such as incomplete cleaning.
  • the atmospheric pressure plasma radical cleaning system of the invention adopts two kinds of free radical beam streams of different energies, can effectively remove the hard shell generated by the injection of high energy particles, and pre-prescribes the photoresist by the high energy radical beam current. Cleaning, most of the photoresist can be washed away, and then the photoresist is subjected to secondary fine processing by a lower energy radical beam.
  • the invention simultaneously adopts a high energy and low energy free radical beam stream, which not only improves the cleaning efficiency, but also minimizes the free radical to silicon during the cleaning process. Damage caused by the surface of the sheet.
  • the invention relates to an atmospheric pressure plasma radical cleaning system comprising an intermediate frequency plasma generator, a radio frequency plasma generator, a suction device, a power supply system, a mobile mechanical arm, an air intake system and an air pump.
  • the system is characterized in that: the system simultaneously adopts an intermediate frequency plasma generator and a radio frequency plasma generator as a plasma source, and the working gas enters into two plasma generators under the control of the flow meter, and the suction device is fixed.
  • the two plasma generators spray a free radical beam upward, adsorbing the suction device of the silicon wafer, and driven by the mechanical arm, from above the plasma generator nozzle
  • the silicon wafer is removed by glue cleaning, and the distance between the silicon wafer and the nozzles of the two plasma generators is 0.5 ⁇ 2.5 mm;
  • the atmospheric pressure plasma radical cleaning system is characterized in that: the plasma generator comprises an intermediate frequency plasma generator and a radio frequency plasma generator, and the intermediate frequency plasma generator comprises a high voltage electrode and two grounds
  • the electrode and the high voltage electrode are covered by a dielectric barrier layer such as quartz or ceramic, and the radical energy ejected from the nozzle of the intermediate frequency plasma generator is high, and is used for pre-cleaning the silicon wafer photoresist
  • the radio frequency plasma generator includes an RF The electrode and the two ground electrodes, the RF electrode is covered by a dielectric barrier layer such as ceramic or quartz, and the radical energy ejected from the nozzle of the RF plasma generator is relatively low, and is used for performing fine cleaning of the silicon wafer photoresist;
  • the atmospheric pressure plasma radical cleaning system is characterized in that: the power supply system comprises an intermediate frequency power supply (frequency range of 15-40 kHz) and an RF power supply (frequency of 13.56 MHz), an intermediate frequency power supply and an intermediate frequency plasma.
  • the power supply system comprises an intermediate frequency power supply (frequency range of 15-40 kHz) and an RF power supply (frequency of 13.56 MHz), an intermediate frequency power supply and an intermediate frequency plasma.
  • the atmospheric pressure plasma radical cleaning system is characterized in that: the suction device has the function of adsorbing silicon wafers, and also has the function of heating silicon wafers (the temperature range of the silicon wafer is
  • the suction device is driven by the one-dimensional mechanical arm, and sequentially passes through the discharge region of the intermediate frequency plasma generator and the discharge region of the RF plasma generator.
  • the advantages of the atmospheric pressure plasma radical cleaning system of the invention are as follows: 1.
  • the cleaning system adopts two discharge modes of high voltage discharge and radio frequency discharge, and the system effectively shields the interference between the two forms of discharge, and both of the discharges are stable. Working under normal pressure; 2.
  • the silicon wafer is pretreated by the high-energy radical beam generated by the intermediate frequency plasma generator to greatly reduce the thickness of the photoresist, and then generated by the RF plasma generator.
  • the lower energy free radical beam is finely processed, which improves the rate of dry degumming cleaning and minimizes the damage of free radicals on the surface of the wafer.
  • the intermediate frequency discharge and the RF discharge are all realized under atmospheric pressure, and no vacuum is required, which reduces the process cost.
  • the primary use of the present invention is to clean the photoresist and organic contaminants on the silicon wafer, or the cleaning of organic contaminants on other substrate surfaces, in the integrated circuit fabrication process.
  • FIG. 1 is a schematic view showing the structure of an atmospheric pressure plasma radical cleaning system of the present invention.
  • a schematic structural diagram of an atmospheric pressure plasma radical cleaning system of the present invention includes an intermediate frequency plasma generator 107 and a radio frequency plasma generator 104 , a suction device 110 , an intermediate frequency power source 106 , an RF power source 103 , and a moving robot arm 111 .
  • the working gas enters the intake line 102 through the intake system 101, and enters the intermediate frequency plasma generator 107 and the RF plasma by the control valve.
  • the intermediate frequency plasma generator After the power is turned on, the intermediate frequency plasma generator generates a higher energy free radical beam 108, and the radio frequency plasma generator generates a lower energy free radical beam 105, the pumping system 112 and the suction device 110.
  • a negative pressure is formed on the lower surface of the suction device during pumping, thereby adsorbing the silicon wafer or other substrate 109 onto the suction device, and the suction device is sequentially driven by the moving robot arm 111 to pass the intermediate frequency plasma.
  • the generator and RF plasma generator when above the intermediate frequency plasma generator, due to the higher energy of the free radical beam generated by the intermediate frequency plasma generator, the degumming rate is fast, in order to avoid plasma on the silicon wafer Or the surface of the substrate is damaged.
  • the moving arm moves at a faster rate. Only the surface of the silicon wafer or substrate is pre-cleaned to remove most of the photoresist or organic contaminants. When it reaches the top of the RF plasma generator. Because the energy of the free radical beam generated by the RF plasma generator is low, the moving speed of the arm needs to be appropriately reduced to clean the remaining light. Plastic or organic contaminants.
  • the products of higher energy free radicals and lower energy radicals reacted with photoresist and organic pollutants are water and carbon dioxide, which do not pollute the environment and can be directly discharged into the atmosphere.
  • the system's cleaning rate can be controlled by controlling the power supply, operating gas flow, and arm movement rate.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

一种常压等离子体自由基清洗系统，包括一台中频等离子体发生器（107）、一台射频等离子体发生器（104）、吸片装置（110）、电源系统、移动机械臂（111）、进气系统（101）以及抽气泵（112）。系统同时采用一台中频等离子体发生器和一台射频等离子体发生器作为等离子源，工作气体在流量计的控制下分别进入到两台等离子体发生器中，吸片装置固定在一维移动机机械臂上，电源接通后，两台等离子体发生器向上喷出自由基束流，吸片装置吸附着硅片，在机械臂的带动下，从等离子体发生器喷口的上方扫过，进行硅片去胶清洗，硅片两台等离子体发生器喷口的距离均为0.5-2.5mm。本系统可用于硅片光刻胶和有机污染物清洗或其它衬底表面的有机污染物的清洗。

Description

一种常压等离子体自由基清洗系统
技术领域
本发明涉及到一种常压等离子体自由基清洗系统，该系统包括一 台中频等离子体发生器和一台射频等离子体发生器， 通入工作气体， 接通电源后， 这两台等离子体发生器向上产生能量不同的自由基束 流，用来对硅片上的光刻胶及有机物污染物或其他衬底上的有机污染 物进行清洗。 背景技术
硅片光刻胶清洗处理不当可能使全部硅片报废，或制造出的器件 性能低劣、 稳定性及可靠性差， 大规模集成电路发展迅速， 线宽不断 减小， 对硅片的无损伤清洗的要求越来越高， 人们已经逐渐认识到了 湿法清洗不能精确控制、 清洗不彻底、 易引入新的杂质、 废液污染环 境等缺点， 现在已经出现了常压干法清洗硅片光刻胶的方法， 其中一 种方法是采用自由基清洗光刻胶， 目前这种方法都是采用了单一的电 源和单一的等离子体发生器， 存在去除光刻胶的速率较慢、 易对器件 产生损伤、 或清洗不彻底等问题。
本发明常压等离子体自由基清洗系统采用了两种不同能量的自 由基束流， 可高效地去除由于高能粒子注入产生的硬壳， 先由高能量 的自由基束流对光刻胶进行预清洗， 可以清洗掉大部分的光刻胶，然 后再由较低能量的自由基束流对光刻胶进行二次精细处理。与传统干 法去胶清洗系统相比，本发明同时采用了高能量和低能量的自由基束 流， 既提高了清洗效率， 也最大限度的降低了清洗过程中自由基对硅 片表面造成的损伤。
发明内容
本发明一种常压等离子体自由基清洗系统，包括一台中频等离子 体发生器、 一台射频等离子体发生器、 吸片装置、 电源系统、 移动机 械臂、 进气系统以及抽气泵。 其特征在于： 系统同时采用一台中频等 离子体发生器和一台射频等离子体发生器作为等离子体源，工作气体 在流量计的控制下分别进入到两台等离子体发生器中，吸片装置固定 在一维移动机械臂上， 电源接通过后， 两台等离子体发生器向上喷出 自由基束流， 吸附着硅片的吸盘装置， 在机械臂的带动下， 从等离子 体发生器喷口的上方扫过， 进行硅片去胶清洗， 硅片与两台等离子体 发生器喷口的距离均为 0.5~2.5 mm;
所述的常压等离子体自由基清洗系统， 其特征在于： 等离子体发 生器包括一台中频等离子体发生器和一台射频等离子体发生器，中频 等离子体发生器包括一个高压电极和两个地电极，高压电极由石英或 陶瓷等介质阻挡层包覆，从中频等离子体发生器喷口喷出的自由基能 量较高， 用于进行硅片光刻胶预清洗， 射频等离子体发生器包括一个 射频电极和两个地电极， 射频电极由陶瓷或石英等介质阻挡层包覆， 从射频等离子体发生器喷口喷出的自由基能量相对较低，用于进行硅 片光刻胶精细清洗；
所述的常压等离子体自由基清洗系统， 其特征在于： 电源系统包 括一台中频电源 （频率范围为 15-40 kHz) 和一台射频电源 （频率为 13.56 MHz), 中频电源与中频等离子体发生器连接， 射频电源和射频 等离子体发生器连接；
所述的常压等离子体自由基清洗系统， 其特征在于： 吸片装置具 有吸附硅片的功能， 同时还具有加热硅片的功能 （硅片温度范围在
150-250°C )， 吸片装置在一维机械臂的带动下， 依次通过中频等离子 体发生器放电区域和射频等离子体发生器放电区域。
本发明常压等离子体自由基清洗系统的优点是： 1、 该清洗系统 采用了高压放电和射频放电两种放电形式，系统有效屏蔽了两种形式 放电之间的干扰， 这两种放电均稳定工作在常压下； 2、 系统工作时， 硅片先由中频等离子体发生器产生的高能量自由基束流进行预处理， 大幅减小光刻胶的厚度，再由射频等离子体发生器产生的能量较低的 自由基束流进行精细处理， 提高了干法去胶清洗的速率， 也最大限度 的降低了自由基对硅片表面的损伤。 3、 中频放电和射频放电都是在 大气压下实现的， 不需要抽真空， 降低了工艺成本。
本发明的主要用途是在集成电路制造工艺中， 清洗硅片上的光刻 胶和有机污染物， 或其他衬底表面的有机污染物的清洗。 附图说明
图 1本发明常压等离子体自由基清洗系统结构示意图。
请参阅图 1， 本发明常压等离子体自由基清洗系统结构示意图， 包括中频等离子体发生器 107和射频等离子体发生器 104、 吸片装置 110、 中频电源 106、 射频电源 103、 移动机械臂 111、 进气系统 101 以及抽气系统 112。 工作气体通过进气系统 101进入进气管路 102， 通过控制阀门，分别进入中频等离子体发生器 107和射频等离子体发 生器 104， 电源接通后， 中频等离子体发生器产生能量较高的自由基 束流 108， 射频等离子体发生器产生能量较低的自由基束流 105， 抽 气系统 112与吸片装置 110通过导气管连接，抽气时吸片装置下表面 形成负压， 从而将硅片或其他衬底 109吸附到吸片装置上， 吸片装置 在移动机械臂 111的带动下，依次通过中频等离子体发生器和射频等 离子体发生器的上方， 当在中频等离子体发生器的上方时， 由于中频 等离子体发生器产生的自由基束流能量较高， 去胶速率快， 为了避免 等离子体对硅片或衬底表面造成损伤， 移动机械臂的移动速率较快， 仅对硅片或衬底表面进行预清洗， 去除掉大部分光刻胶或有机污染 物， 当到达射频等离子体发生器的上方时， 由于射频等离子体发生器 产生的自由基束流能量较低， 机械臂的移动速度需要适当降低， 以清 洗剩余的光刻胶或有机污染物。
本发明中，能量较高自由基和能量较低的自由基与光刻胶和有机 污染物反应生成的产物为水和二氧化碳， 不会对环境造成污染， 可直 接排放到大气中。可以通过控制电源功率、工作气体流量和机械臂移 动速率来控制系统的清洗速率。
上面参考附图结合具体的实施例对本发明进行了描述， 然而，需 要说明的是， 对于本领域的技术人员而言， 在不脱离本发明的精神和 范围的情况下， 可以对上述实施例做出许多改变和修改， 这些改变和 修改都落在本发明的权利要求限定的范围内。

Claims

权 利 要 求 书
1、 一种常压等离子体自由基清洗系统， 包括一台中频等离子体发生 器、 一台射频等离子体发生器、 吸片装置、 电源系统、 移动机械臂、 进气系统以及抽气泵， 其特征在于： 系统同时采用一台中频等离子体 发生器和一台射频等离子体发生器作为等离子体源，工作气体在流量 计的控制下分别进入到两台等离子体发生器中，吸片装置固定在一维 移动机械臂上， 电源接通过后， 两台等离子体发生器向上喷出自由基 束流， 吸盘装置吸附着硅片， 在机械臂的带动下， 从等离子体发生器 喷口的上方扫过， 进行硅片去胶清洗， 硅片与两台等离子体发生器喷 口的距离均为 0.5~2.5 mm。
2、如权利要求 1所述的常压等离子体自由基清洗系统， 其特征在于: 等离子体发生器包括一台中频等离子体发生器和一台射频等离子体 发生器， 中频等离子体发生器包括一个高压电极和两个地电极， 高压 电极由石英或陶瓷等介质阻挡层包覆，从中频等离子体发生器喷口喷 出的自由基能量较高， 用于进行硅片光刻胶预清洗， 射频等离子体发 生器包括一个射频电极和两个地电极，射频电极由陶瓷或石英等介质 阻挡层包覆， 从射频等离子体发生器喷口喷出的自由基能量相对较 低， 用于进行硅片光刻胶精细清洗。
3、如权利要求 1所述的常压等离子体自由基清洗系统， 其特征在于: 电源系统包括一台中频电源 （频率范围为 15-40 kHz) 和一台射频电 源 （频率为 13.56 MHz) , 中频电源与中频等离子体发生器连接， 射 频电源和射频等离子体发生器连接。
4、如权利要求 1所述的常压等离子体自由基清洗系统， 其特征在于： 吸片装置具有吸附硅片的功能， 同时还具有加热硅片的功能（硅片温 度范围在 150-250°C )， 吸片装置在一维机械臂的带动下，依次通过中 频等离子体发生器放电区域和射频等离子体发生器放电区域。
PCT/CN2012/086414 2012-04-05 2012-12-12 一种常压等离子体自由基清洗系统 WO2013149481A1 (zh)

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