JPS6350854B2 - - Google Patents
Info
- Publication number
- JPS6350854B2 JPS6350854B2 JP53076986A JP7698678A JPS6350854B2 JP S6350854 B2 JPS6350854 B2 JP S6350854B2 JP 53076986 A JP53076986 A JP 53076986A JP 7698678 A JP7698678 A JP 7698678A JP S6350854 B2 JPS6350854 B2 JP S6350854B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- dry etching
- substrate
- etched
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001312 dry etching Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7698678A JPS554937A (en) | 1978-06-27 | 1978-06-27 | Dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7698678A JPS554937A (en) | 1978-06-27 | 1978-06-27 | Dry etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS554937A JPS554937A (en) | 1980-01-14 |
JPS6350854B2 true JPS6350854B2 (fr) | 1988-10-12 |
Family
ID=13621090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7698678A Granted JPS554937A (en) | 1978-06-27 | 1978-06-27 | Dry etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS554937A (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56105483A (en) * | 1980-01-25 | 1981-08-21 | Mitsubishi Electric Corp | Dry etching device |
JPS6084762U (ja) * | 1983-11-15 | 1985-06-11 | 愛三工業株式会社 | 内燃機関用混合気供給装置 |
JPS62279626A (ja) * | 1986-05-27 | 1987-12-04 | M Setetsuku Kk | 半導体用基板に対する不純物のド−ピング方法 |
US5085727A (en) * | 1990-05-21 | 1992-02-04 | Applied Materials, Inc. | Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion |
DE102006042501B4 (de) * | 2006-09-07 | 2010-11-25 | Eisenmann Anlagenbau Gmbh & Co. Kg | Verfahren und Anlage zum Trocknen von Gegenständen |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52130288A (en) * | 1976-04-26 | 1977-11-01 | Hitachi Ltd | Patterning method |
-
1978
- 1978-06-27 JP JP7698678A patent/JPS554937A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52130288A (en) * | 1976-04-26 | 1977-11-01 | Hitachi Ltd | Patterning method |
Also Published As
Publication number | Publication date |
---|---|
JPS554937A (en) | 1980-01-14 |
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