JPS6350852B2 - - Google Patents

Info

Publication number
JPS6350852B2
JPS6350852B2 JP18046583A JP18046583A JPS6350852B2 JP S6350852 B2 JPS6350852 B2 JP S6350852B2 JP 18046583 A JP18046583 A JP 18046583A JP 18046583 A JP18046583 A JP 18046583A JP S6350852 B2 JPS6350852 B2 JP S6350852B2
Authority
JP
Japan
Prior art keywords
pattern
mask
resist
exposure
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18046583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6074525A (ja
Inventor
Hiroyuki Tanaka
Takashi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58180465A priority Critical patent/JPS6074525A/ja
Publication of JPS6074525A publication Critical patent/JPS6074525A/ja
Publication of JPS6350852B2 publication Critical patent/JPS6350852B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58180465A 1983-09-30 1983-09-30 半導体装置の製造方法 Granted JPS6074525A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58180465A JPS6074525A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58180465A JPS6074525A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6074525A JPS6074525A (ja) 1985-04-26
JPS6350852B2 true JPS6350852B2 (fr) 1988-10-12

Family

ID=16083693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58180465A Granted JPS6074525A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6074525A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145637A (ja) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp 半導体装置のパタ−ン寸法測定方法
JPS63281439A (ja) * 1987-05-13 1988-11-17 Fujitsu Ltd 焼き付けずれチェック方法
JPH08162513A (ja) * 1991-11-08 1996-06-21 Nec Corp 素子寸法チェックパターン
US6507944B1 (en) * 1999-07-30 2003-01-14 Fujitsu Limited Data processing method and apparatus, reticle mask, exposing method and apparatus, and recording medium
JP4972278B2 (ja) * 2004-11-29 2012-07-11 富士通セミコンダクター株式会社 レチクル及び半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427708A (en) * 1977-08-03 1979-03-02 Pioneer Electronic Corp Signal compander

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427708A (en) * 1977-08-03 1979-03-02 Pioneer Electronic Corp Signal compander

Also Published As

Publication number Publication date
JPS6074525A (ja) 1985-04-26

Similar Documents

Publication Publication Date Title
US5128283A (en) Method of forming mask alignment marks
JP3052064B2 (ja) オーバレーマーク
US5936738A (en) Focus monitor for alternating phase shifted masks
US4500615A (en) Wafer exposure method and apparatus
CN111948901B (zh) 掩膜版及其制备方法
US5439767A (en) Phase shift mask and its inspection method
US7099011B2 (en) Method and apparatus for self-referenced projection lens distortion mapping
US7030506B2 (en) Mask and method for using the mask in lithographic processing
KR20030043587A (ko) 수차 계측용 포토 마스크, 수차 계측 방법, 수차 계측용장치 및 이 장치의 제조 방법
US6741334B2 (en) Exposure method, exposure system and recording medium
US6344896B1 (en) Method and apparatus for measuring positional shift/distortion by aberration
KR100551149B1 (ko) 레지스트 감도의 평가 방법 및 레지스트의 제조 방법
US20060035158A1 (en) Process control method, a method for forming monitor marks, a mask for process control, and a semiconductor device manufacturing method
KR20000071810A (ko) 수차에 기인한 위치상의 이동과 위치 어긋남의 측정 장치및 방법
JPS6350852B2 (fr)
US5237393A (en) Reticle for a reduced projection exposure apparatus
US5723238A (en) Inspection of lens error associated with lens heating in a photolithographic system
JP4157518B2 (ja) 基板を準備する方法、測定方法、デバイス製造方法、リソグラフィ装置、コンピュータ・プログラム、及び基板
US8198105B2 (en) Monitor for variation of critical dimensions (CDs) of reticles
JP2970473B2 (ja) アライメント方法およびアライメント誤差検査方法
US5928820A (en) Method for measuring pattern line width during manufacture of a semiconductor device
US6913858B2 (en) Photomask for measuring lens aberration, method of manufacturing the same, and method of measuring lens aberration
US20020008860A1 (en) Reticle system for measurement of effective coherence factors
JP2995061B2 (ja) フォトマスク
US20080057410A1 (en) Method of repairing a photolithographic mask