JPS6350851B2 - - Google Patents

Info

Publication number
JPS6350851B2
JPS6350851B2 JP438179A JP438179A JPS6350851B2 JP S6350851 B2 JPS6350851 B2 JP S6350851B2 JP 438179 A JP438179 A JP 438179A JP 438179 A JP438179 A JP 438179A JP S6350851 B2 JPS6350851 B2 JP S6350851B2
Authority
JP
Japan
Prior art keywords
solution
epitaxial layer
conductivity type
liquid phase
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP438179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5596629A (en
Inventor
Tamotsu Uragaki
Morio Inoe
Susumu Furuike
Hitoo Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP438179A priority Critical patent/JPS5596629A/ja
Priority to US06/109,915 priority patent/US4268327A/en
Publication of JPS5596629A publication Critical patent/JPS5596629A/ja
Publication of JPS6350851B2 publication Critical patent/JPS6350851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H10P14/265—
    • H10P14/3418—
    • H10P14/3421—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP438179A 1979-01-17 1979-01-17 Method of epitaxially growing in liquid phase Granted JPS5596629A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP438179A JPS5596629A (en) 1979-01-17 1979-01-17 Method of epitaxially growing in liquid phase
US06/109,915 US4268327A (en) 1979-01-17 1980-01-07 Method for growing semiconductor epitaxial layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP438179A JPS5596629A (en) 1979-01-17 1979-01-17 Method of epitaxially growing in liquid phase

Publications (2)

Publication Number Publication Date
JPS5596629A JPS5596629A (en) 1980-07-23
JPS6350851B2 true JPS6350851B2 (show.php) 1988-10-12

Family

ID=11582771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP438179A Granted JPS5596629A (en) 1979-01-17 1979-01-17 Method of epitaxially growing in liquid phase

Country Status (2)

Country Link
US (1) US4268327A (show.php)
JP (1) JPS5596629A (show.php)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3124817A1 (de) * 1981-06-24 1983-01-20 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode mit hohem wirkungsgrad und hoher grenzfrequenz der modulierbarkeit
DE3128395A1 (de) * 1981-07-17 1983-02-03 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode
JPS5922376A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Ind Co Ltd 純緑色発光ダイオ−ドおよびその製造方法
JPS5935091A (ja) * 1982-08-20 1984-02-25 Matsushita Electric Ind Co Ltd 液相エピタキシヤル成長方法
JPH042689A (ja) * 1990-04-19 1992-01-07 Mitsubishi Electric Corp ヘテロエピタキシャル液相成長方法
US5264190A (en) * 1990-04-19 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Liquid phase epitaxial film growth apparatus
JP2503130B2 (ja) * 1991-07-29 1996-06-05 信越半導体株式会社 液相成長方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3365630A (en) * 1965-01-29 1968-01-23 Bell Telephone Labor Inc Electroluminescent gallium phosphide crystal with three dopants
US3592704A (en) * 1968-06-28 1971-07-13 Bell Telephone Labor Inc Electroluminescent device
US3689330A (en) * 1969-04-18 1972-09-05 Sony Corp Method of making a luminescent diode
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
US3951699A (en) * 1973-02-22 1976-04-20 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a gallium phosphide red-emitting device
JPS5325634B2 (show.php) * 1973-04-04 1978-07-27
DE2346198A1 (de) * 1973-07-27 1975-05-07 Siemens Ag Verfahren zur herstellung gelb leuchtender galliumphosphid-dioden

Also Published As

Publication number Publication date
JPS5596629A (en) 1980-07-23
US4268327A (en) 1981-05-19

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