JPS63502472A - 三次元半導体構造を生成するための液相エピタキシャル法 - Google Patents

三次元半導体構造を生成するための液相エピタキシャル法

Info

Publication number
JPS63502472A
JPS63502472A JP50245187A JP50245187A JPS63502472A JP S63502472 A JPS63502472 A JP S63502472A JP 50245187 A JP50245187 A JP 50245187A JP 50245187 A JP50245187 A JP 50245187A JP S63502472 A JPS63502472 A JP S63502472A
Authority
JP
Japan
Prior art keywords
layer
liquid phase
substrate
epitaxial
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50245187A
Other languages
English (en)
Japanese (ja)
Inventor
バオザー，エリーザベット
シュトルンク，ホルスト　パオル
Original Assignee
マックス・プランク・ゲゼルシャフト　ツ−ル　フェ−ルデルンク　デア　ビッセンシャフテン　エ−　ファウ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by マックス・プランク・ゲゼルシャフト　ツ−ル　フェ−ルデルンク　デア　ビッセンシャフテン　エ−　ファウ filed Critical マックス・プランク・ゲゼルシャフト　ツ−ル　フェ−ルデルンク　デア　ビッセンシャフテン　エ−　ファウ
Publication of JPS63502472A publication Critical patent/JPS63502472A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP50245187A 1986-02-11 1987-02-11 三次元半導体構造を生成するための液相エピタキシャル法 Pending JPS63502472A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19863604260 DE3604260A1 (de) 1986-02-11 1986-02-11 Fluessigkeitsepitaxieverfahren
DE3604260.9 1986-02-11

Publications (1)

Publication Number Publication Date
JPS63502472A true JPS63502472A (ja) 1988-09-14

Family

ID=6293866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50245187A Pending JPS63502472A (ja) 1986-02-11 1987-02-11 三次元半導体構造を生成するための液相エピタキシャル法

Country Status (4)

Country Link
EP (1) EP0255837A1 (fr)
JP (1) JPS63502472A (fr)
DE (1) DE3604260A1 (fr)
WO (1) WO1987004854A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03209720A (ja) * 1989-09-21 1991-09-12 Oki Electric Ind Co Ltd 半導体基板の製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863877A (en) * 1987-11-13 1989-09-05 Kopin Corporation Ion implantation and annealing of compound semiconductor layers
US5453153A (en) * 1987-11-13 1995-09-26 Kopin Corporation Zone-melting recrystallization process
FR2629636B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
US5796119A (en) * 1993-10-29 1998-08-18 Texas Instruments Incorporated Silicon resonant tunneling

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126048A (en) * 1975-01-31 1976-11-02 Hitachi Ltd Hetero epitaxial growth method of iii-v group semi-conductors
JPS51138180A (en) * 1975-05-26 1976-11-29 Nippon Telegr & Teleph Corp <Ntt> Distributed feedback type semi-conductor laser and the method of manuf acturing it
JPS55132087A (en) * 1979-03-30 1980-10-14 Matsushita Electric Ind Co Ltd Semiconductor laser device and its manufacturing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028147A (en) * 1974-12-06 1977-06-07 Hughes Aircraft Company Liquid phase epitaxial process for growing semi-insulating GaAs layers
DE3339272A1 (de) * 1983-10-28 1985-05-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von a(pfeil abwaerts)3(pfeil abwaerts)b(pfeil abwaerts)5(pfeil abwaerts)-lumineszenzdioden
US4551394A (en) * 1984-11-26 1985-11-05 Honeywell Inc. Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126048A (en) * 1975-01-31 1976-11-02 Hitachi Ltd Hetero epitaxial growth method of iii-v group semi-conductors
JPS51138180A (en) * 1975-05-26 1976-11-29 Nippon Telegr & Teleph Corp <Ntt> Distributed feedback type semi-conductor laser and the method of manuf acturing it
JPS55132087A (en) * 1979-03-30 1980-10-14 Matsushita Electric Ind Co Ltd Semiconductor laser device and its manufacturing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03209720A (ja) * 1989-09-21 1991-09-12 Oki Electric Ind Co Ltd 半導体基板の製造方法

Also Published As

Publication number Publication date
WO1987004854A3 (fr) 1988-03-24
DE3604260A1 (de) 1987-08-13
WO1987004854A2 (fr) 1987-08-13
EP0255837A1 (fr) 1988-02-17

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