JPS51138180A - Distributed feedback type semi-conductor laser and the method of manuf acturing it - Google Patents
Distributed feedback type semi-conductor laser and the method of manuf acturing itInfo
- Publication number
- JPS51138180A JPS51138180A JP50061826A JP6182675A JPS51138180A JP S51138180 A JPS51138180 A JP S51138180A JP 50061826 A JP50061826 A JP 50061826A JP 6182675 A JP6182675 A JP 6182675A JP S51138180 A JPS51138180 A JP S51138180A
- Authority
- JP
- Japan
- Prior art keywords
- distributed feedback
- feedback type
- type semi
- conductor laser
- manuf acturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To minimize the introduction of defects into an active stratum by forming uneven wrinkles at least on one side of a clad stratum.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50061826A JPS51138180A (en) | 1975-05-26 | 1975-05-26 | Distributed feedback type semi-conductor laser and the method of manuf acturing it |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50061826A JPS51138180A (en) | 1975-05-26 | 1975-05-26 | Distributed feedback type semi-conductor laser and the method of manuf acturing it |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51138180A true JPS51138180A (en) | 1976-11-29 |
JPS5410435B2 JPS5410435B2 (en) | 1979-05-07 |
Family
ID=13182272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50061826A Granted JPS51138180A (en) | 1975-05-26 | 1975-05-26 | Distributed feedback type semi-conductor laser and the method of manuf acturing it |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51138180A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63502472A (en) * | 1986-02-11 | 1988-09-14 | マックス・プランク・ゲゼルシャフト ツ−ル フェ−ルデルンク デア ビッセンシャフテン エ− ファウ | Liquid phase epitaxial method for producing three-dimensional semiconductor structures |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS502884A (en) * | 1973-05-09 | 1975-01-13 |
-
1975
- 1975-05-26 JP JP50061826A patent/JPS51138180A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS502884A (en) * | 1973-05-09 | 1975-01-13 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63502472A (en) * | 1986-02-11 | 1988-09-14 | マックス・プランク・ゲゼルシャフト ツ−ル フェ−ルデルンク デア ビッセンシャフテン エ− ファウ | Liquid phase epitaxial method for producing three-dimensional semiconductor structures |
Also Published As
Publication number | Publication date |
---|---|
JPS5410435B2 (en) | 1979-05-07 |
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