JPS63501906A - バイポ−ラプログラム可能記憶装置および方法 - Google Patents

バイポ−ラプログラム可能記憶装置および方法

Info

Publication number
JPS63501906A
JPS63501906A JP61505829A JP50582986A JPS63501906A JP S63501906 A JPS63501906 A JP S63501906A JP 61505829 A JP61505829 A JP 61505829A JP 50582986 A JP50582986 A JP 50582986A JP S63501906 A JPS63501906 A JP S63501906A
Authority
JP
Japan
Prior art keywords
transistor
base
emitter
transistors
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61505829A
Other languages
English (en)
Japanese (ja)
Other versions
JPH033320B2 (cg-RX-API-DMAC10.html
Inventor
バイナム・バイロン　グレン
Original Assignee
モトロ−ラ・インコ−ポレ−テッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by モトロ−ラ・インコ−ポレ−テッド filed Critical モトロ−ラ・インコ−ポレ−テッド
Publication of JPS63501906A publication Critical patent/JPS63501906A/ja
Publication of JPH033320B2 publication Critical patent/JPH033320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
JP61505829A 1985-12-23 1986-10-14 バイポ−ラプログラム可能記憶装置および方法 Granted JPS63501906A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US812659 1985-12-23
US06/812,659 US4703455A (en) 1985-12-23 1985-12-23 Bipolar programmable memory and method

Publications (2)

Publication Number Publication Date
JPS63501906A true JPS63501906A (ja) 1988-07-28
JPH033320B2 JPH033320B2 (cg-RX-API-DMAC10.html) 1991-01-18

Family

ID=25210256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61505829A Granted JPS63501906A (ja) 1985-12-23 1986-10-14 バイポ−ラプログラム可能記憶装置および方法

Country Status (4)

Country Link
US (1) US4703455A (cg-RX-API-DMAC10.html)
EP (1) EP0250467A4 (cg-RX-API-DMAC10.html)
JP (1) JPS63501906A (cg-RX-API-DMAC10.html)
WO (1) WO1987003997A1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174549A (ja) * 1989-12-04 1991-07-29 Ricoh Co Ltd 電子写真記録装置
WO2005015567A1 (de) * 2003-07-29 2005-02-17 Infineon Technologies Ag Nichtflüchtiges speicherelement mit erhöhter datensicherheit
US7292066B2 (en) * 2005-04-27 2007-11-06 Stmicroelectronics, Inc. One-time programmable circuit exploiting BJT hFE degradation
CN111713019A (zh) * 2018-02-12 2020-09-25 诺摩尔有限公司 一种晶体管器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3848238A (en) * 1970-07-13 1974-11-12 Intersil Inc Double junction read only memory
US4064493A (en) * 1976-06-03 1977-12-20 Motorola, Inc. P-ROM Cell having a low current fusible programming link
US4094008A (en) * 1976-06-18 1978-06-06 Ncr Corporation Alterable capacitor memory array
DE2738187C2 (de) * 1977-08-24 1979-02-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung für mehrere auf einem Bipolar-Baustein angeordnete Speicherzellen mit einer Regelschaltung zur Kennlinien-Anpassung der Speicherzellen
US4158239A (en) * 1977-12-20 1979-06-12 International Business Machines Corporation Resistive gate FET flip-flop storage cell
JPS58100297A (ja) * 1981-12-11 1983-06-14 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0250467A4 (en) 1990-05-14
JPH033320B2 (cg-RX-API-DMAC10.html) 1991-01-18
EP0250467A1 (en) 1988-01-07
WO1987003997A1 (en) 1987-07-02
US4703455A (en) 1987-10-27

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