JPS6349385B2 - - Google Patents
Info
- Publication number
- JPS6349385B2 JPS6349385B2 JP16527083A JP16527083A JPS6349385B2 JP S6349385 B2 JPS6349385 B2 JP S6349385B2 JP 16527083 A JP16527083 A JP 16527083A JP 16527083 A JP16527083 A JP 16527083A JP S6349385 B2 JPS6349385 B2 JP S6349385B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film capacitor
- sio
- sputtering
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 34
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000008685 targeting Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16527083A JPS6057959A (ja) | 1983-09-09 | 1983-09-09 | 薄膜コンデンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16527083A JPS6057959A (ja) | 1983-09-09 | 1983-09-09 | 薄膜コンデンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6057959A JPS6057959A (ja) | 1985-04-03 |
| JPS6349385B2 true JPS6349385B2 (enrdf_load_stackoverflow) | 1988-10-04 |
Family
ID=15809139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16527083A Granted JPS6057959A (ja) | 1983-09-09 | 1983-09-09 | 薄膜コンデンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6057959A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3047256B2 (ja) * | 1991-06-13 | 2000-05-29 | 株式会社豊田中央研究所 | 誘電体薄膜 |
-
1983
- 1983-09-09 JP JP16527083A patent/JPS6057959A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6057959A (ja) | 1985-04-03 |
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