JPS6348191B2 - - Google Patents

Info

Publication number
JPS6348191B2
JPS6348191B2 JP55110017A JP11001780A JPS6348191B2 JP S6348191 B2 JPS6348191 B2 JP S6348191B2 JP 55110017 A JP55110017 A JP 55110017A JP 11001780 A JP11001780 A JP 11001780A JP S6348191 B2 JPS6348191 B2 JP S6348191B2
Authority
JP
Japan
Prior art keywords
region
base region
collector
base
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55110017A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5734361A (en
Inventor
Kenichi Muramoto
Takeo Shiomi
Masahiro Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP11001780A priority Critical patent/JPS5734361A/ja
Publication of JPS5734361A publication Critical patent/JPS5734361A/ja
Publication of JPS6348191B2 publication Critical patent/JPS6348191B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP11001780A 1980-08-11 1980-08-11 Semiconductor device Granted JPS5734361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11001780A JPS5734361A (en) 1980-08-11 1980-08-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11001780A JPS5734361A (en) 1980-08-11 1980-08-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5734361A JPS5734361A (en) 1982-02-24
JPS6348191B2 true JPS6348191B2 (enrdf_load_stackoverflow) 1988-09-28

Family

ID=14525006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11001780A Granted JPS5734361A (en) 1980-08-11 1980-08-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5734361A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914670A (ja) * 1982-07-16 1984-01-25 Nec Corp トランジスタ
EP0429686B1 (de) * 1989-10-30 1994-12-28 Siemens Aktiengesellschaft Eingangsschutzstruktur für integrierte Schaltungen
JP6529210B2 (ja) 2013-04-04 2019-06-12 スリーエム イノベイティブ プロパティズ カンパニー 研磨ディスクを用いる研磨方法およびこれに用いる物品

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558568A (en) * 1978-10-25 1980-05-01 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5734361A (en) 1982-02-24

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