JPS6348189B2 - - Google Patents
Info
- Publication number
- JPS6348189B2 JPS6348189B2 JP55109527A JP10952780A JPS6348189B2 JP S6348189 B2 JPS6348189 B2 JP S6348189B2 JP 55109527 A JP55109527 A JP 55109527A JP 10952780 A JP10952780 A JP 10952780A JP S6348189 B2 JPS6348189 B2 JP S6348189B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor region
- semiconductor
- power transistor
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10952780A JPS5734357A (en) | 1980-08-09 | 1980-08-09 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10952780A JPS5734357A (en) | 1980-08-09 | 1980-08-09 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5734357A JPS5734357A (en) | 1982-02-24 |
| JPS6348189B2 true JPS6348189B2 (enrdf_load_html_response) | 1988-09-28 |
Family
ID=14512513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10952780A Granted JPS5734357A (en) | 1980-08-09 | 1980-08-09 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5734357A (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1214808B (it) * | 1984-12-20 | 1990-01-18 | Ates Componenti Elettron | Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli |
| IT1252102B (it) * | 1991-11-26 | 1995-06-02 | Cons Ric Microelettronica | Dispositivo monolitico a semiconduttore a struttura verticale con transistore di potenza a base profonda e emettitore a dita avente resistenze di ballast |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50141979A (enrdf_load_html_response) * | 1974-05-01 | 1975-11-15 | ||
| JPS5570063A (en) * | 1978-11-22 | 1980-05-27 | Hitachi Ltd | Transistor and its preparation |
-
1980
- 1980-08-09 JP JP10952780A patent/JPS5734357A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5734357A (en) | 1982-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6322070B2 (enrdf_load_html_response) | ||
| JP2700180B2 (ja) | pnp型の縦型孤立コレクタトランジスタ | |
| JPS5914897B2 (ja) | 半導体装置 | |
| JPH06104459A (ja) | 半導体装置 | |
| JPS6348189B2 (enrdf_load_html_response) | ||
| JPS5917544B2 (ja) | 半導体集積回路 | |
| JPS6133261B2 (enrdf_load_html_response) | ||
| JPH0425706B2 (enrdf_load_html_response) | ||
| JP2504529B2 (ja) | バイポ―ラ形薄膜半導体装置 | |
| JPS6022504B2 (ja) | 半導体装置の製造方法 | |
| JPH0424866B2 (enrdf_load_html_response) | ||
| JP2763432B2 (ja) | 半導体装置 | |
| JP2558472B2 (ja) | 半導体集積回路 | |
| JPH02159727A (ja) | バイポーラ形薄膜半導体装置 | |
| JPH02114645A (ja) | バイポーラトランジスタ | |
| JP2729059B2 (ja) | 半導体装置 | |
| JP3135615B2 (ja) | 半導体装置及びその製造方法 | |
| JPS6132823B2 (enrdf_load_html_response) | ||
| JPS6364058B2 (enrdf_load_html_response) | ||
| JPH0629374A (ja) | 半導体集積回路装置 | |
| JPH0338747B2 (enrdf_load_html_response) | ||
| EP0052465A2 (en) | I2L semiconductor device | |
| JPH03259533A (ja) | 半導体集積回路装置 | |
| JPS6236864A (ja) | ラテラルトランジスタ | |
| JPS6341062A (ja) | 半導体集積回路 |