JPS6347278B2 - - Google Patents

Info

Publication number
JPS6347278B2
JPS6347278B2 JP8882082A JP8882082A JPS6347278B2 JP S6347278 B2 JPS6347278 B2 JP S6347278B2 JP 8882082 A JP8882082 A JP 8882082A JP 8882082 A JP8882082 A JP 8882082A JP S6347278 B2 JPS6347278 B2 JP S6347278B2
Authority
JP
Japan
Prior art keywords
oscillation
wavelength
layer
waveguide
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8882082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58206183A (ja
Inventor
Yutaka Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP8882082A priority Critical patent/JPS58206183A/ja
Publication of JPS58206183A publication Critical patent/JPS58206183A/ja
Publication of JPS6347278B2 publication Critical patent/JPS6347278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP8882082A 1982-05-27 1982-05-27 半導体レ−ザ装置 Granted JPS58206183A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8882082A JPS58206183A (ja) 1982-05-27 1982-05-27 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8882082A JPS58206183A (ja) 1982-05-27 1982-05-27 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS58206183A JPS58206183A (ja) 1983-12-01
JPS6347278B2 true JPS6347278B2 (OSRAM) 1988-09-21

Family

ID=13953554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8882082A Granted JPS58206183A (ja) 1982-05-27 1982-05-27 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS58206183A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61296787A (ja) * 1985-06-25 1986-12-27 Sharp Corp 干渉型半導体レーザ装置

Also Published As

Publication number Publication date
JPS58206183A (ja) 1983-12-01

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